Method for manufacturing an array of interferometric modulators

• US 7,556,917 B2
• Filed: 11/14/2007
• Issued: 07/07/2009
• Est. Priority Date: 04/15/2003
• Status: Expired due to Fees

• Current Assignee: Snaptrack Incorporated (Qualcomm, Inc.)
• Original Assignee: IDC, LLC
• Inventors: Miles, Mark W.
• Primary Examiner(s): Duda; Kathleen
• Application Number:
  US11/939,746
• Publication Number:
  US 20080068699A1
• Time in Patent Office: 601 Days
• Field of Search: 430/321
• US Class Current: 430/321
• CPC Class Codes: G02B 26/001 based on interference in an adjustable optical cavity interference filters G02B5/28; devices or arrangements using multiple reflections in spectrometry or monochromators G01J3/26

Abstract

In one embodiment, the invention provides a method for manufacturing an array of interferometric modulators. Each interferometric modulator comprises first and second optical layers which when the interferometric modulator is in an undriven state are spaced by a gap of one size, and when the interferometric modulator is in a driven state are spaced by a gap of another size, the size of the gap determining an optical response of the interferometric modulator. The method comprises fabricating interferometric modulators of a first type characterized by the size of the gap between its first and second optical layers when in the undriven state; fabricating interferometric modulators of a second type characterized by the size of the gap between its first and second optical layers when in the undriven state; and fabricating modulators of a third type characterized by the size of the gap between its first and second optical layers when in the undriven state, wherein fabricating the interferometric modulators of the first, second, and third types comprises using a sequence of deposition and patterning steps of not more than 9 masking steps to deposit and pattern layers of material on a substrate.

Claims

1. A method for manufacturing an array of interferometric modulators, each interferometric modulator comprising first and second optical layers which when the interferometric modulator is in an undriven state are spaced by a gap of one size, and when the interferometric modulator is in a driven state are spaced by a gap of another size, the size of the gap determining an optical response of the interferometric modulator, the method comprising:

fabricating interferometric modulators of a plurality of types characterized by gap sizes between its first and second optical layers when in the undriven state;

wherein fabricating the interferometric modulators of the plurality of types comprises in sequence;

forming a sacrificial structure over a light-transmissive substrate, the sacrificial structure having different thicknesses in each of a plurality of regions, each of the thicknesses corresponding to a gap size between the first and second optical layers in the undriven state for reflecting a particular color, the sacrificial structure being formed of an opaque material;

forming vias through the sacrificial structure;

depositing a photosensitive material into the vias and over the sacrificial structure, the photosensitive material being negative acting;

exposing the photosensitive material to light passing through the substrate; and

developing the photosensitive material such that portions of the photosensitive material in the vias remain to form a plurality of supports of the array of interferometric modulators.

2. The method of claim 1, wherein the photosensitive material is polymeric.

3. The method of claim 1, wherein forming the sacrificial structure comprises depositing a plurality of sacrificial layers stacked over one another.

4. The method of claim 3, wherein forming the sacrificial structure further comprises depositing one or more etch stop layers between the sacrificial layers.

5. The method of claim 3, wherein fabricating the interferometric modulators of the plurality of types comprises fabricating interferometric modulators of first, second, and third types characterized by first, second, and third gap sizes, respectively, between its first and second optical layers when in the undriven state, and

wherein forming the sacrificial structure comprises:

depositing a first sacrificial layer, the first sacrificial layer having a first thickness;

depositing a second sacrificial layer over the first sacrificial layer, the second sacrificial layer having a second thickness;

depositing a third sacrificial layer over the second sacrificial layer, the third sacrificial layer having a third thickness;

patterning at least two of the first, second, and third sacrificial layers;

wherein the first gap size is equal to or greater than a sum of the first, second, and third thicknesses;

wherein the second gap size is equal to or greater than a sum of two of the first, second, and third thicknesses; and

wherein the third gap size is equal to or greater than one of the first, second, and third thicknesses.

6. The method of claim 5, wherein the interferometric modulators of the first, second, and third types are formed in first, second, and third regions, respectively, and wherein forming the sacrificial structure comprises in sequence:

depositing the first sacrificial layer in the first, second, and third regions;

removing the first sacrificial layer from the second and third regions;

depositing the second sacrificial layer in the first, second, and third regions;

removing the second sacrificial layer from the third region; and

depositing the third sacrificial layer in the first, second, and third regions.

7. The method of claim 5, wherein the interferometric modulators of the first, second, and third types are formed in first, second, and third regions, respectively, and wherein forming the sacrificial structure comprises in sequence:

depositing the first sacrificial layer;

depositing the second sacrificial layer over the first sacrificial layer;

depositing the third sacrificial layer over the second sacrificial layer;

removing the third sacrificial layer from the second and third regions; and

removing the second sacrificial layer from the third region.

8. The method of claim 5, wherein the interferometric modulators of the first, second, and third types are formed in first, second, and third regions, respectively, and wherein forming the sacrificial structure comprises in sequence:

depositing the first sacrificial layer;

depositing the second sacrificial layer over the first sacrificial layer;

depositing the third sacrificial layer over the second sacrificial layer;

providing a photoresist over the third sacrificial layer;

exposing the photoresist to light with a grayscale mask on top of the photoresist;

removing the photoresist from the third region;

etching away the third sacrificial layer from the third region;

exposing the photoresist to light with the grayscale mask on top of the photoresist;

removing the photoresist from the second region; and

etching away the third sacrificial layer from the second region and the second sacrificial layer from the third region.

9. The method of claim 8, wherein the grayscale mask comprises a substantially zero transmission region overlying the first region, a moderate transmission region overlying the second region, and a highest transmission region overlying the third region, wherein the moderate transmission region has a higher transmittance than the substantially zero transmission region, and wherein the highest transmission region has a higher transmittance than the moderate transmission region.

10. The method of claim 5, wherein forming the sacrificial structure further comprises:

providing an etch stop layer between the first and second sacrificial layers; and

providing an etch stop layer between the second and third sacrificial layers.

11. A method for manufacturing an array of interferometric modulators, each interferometric modulator comprising first and second optical layers which when the interferometric modulator is in an undriven state are spaced by a gap of one size, and when the interferometric modulator is in a driven state are spaced by a gap of another size, the size of the gap determining an optical response of the interferometric modulator, the method comprising fabricating interferometric modulators of one or more types characterized by one or more gap sizes between its first and second optical layers when in the undriven state;

wherein fabricating the interferometric modulators comprises;

forming a first sacrificial structure over a light-transmissive substrate, the sacrificial structure being formed of an opaque material;

forming one or more mirrors on the first sacrificial structure such that portions of the first sacrificial structure are exposed;

forming a second sacrificial structure on the mirrors and on the exposed portions of the first sacrificial structure;

forming first vias extending through the first and second sacrificial structures, and second vias extending through the second sacrificial structure to expose portions of the mirrors;

depositing a photosensitive material into the first and second vias and on the second sacrificial structure, the photosensitive material being negative acting;

exposing the photosensitive material to light passing through the substrate; and

developing the photosensitive material after exposing the photosensitive material.

12. The method of claim 11, wherein developing the photosensitive material comprises developing the photosensitive material such that portions of the photosensitive material in the first vias remain to form a plurality of supports of the array of interferometric modulators.

13. The method of claim 11, wherein the photosensitive material is polymeric.