Semiconductor photodetector

• US 7,557,368 B2
• Filed: 03/03/2003
• Issued: 07/07/2009
• Est. Priority Date: 03/01/2002
• Status: Expired due to Fees

• Current Assignee: The Provost Fellows and Scholars of the College of the Holy and Undivided Trinity of Queen Elizabeth, near Dublin
• Original Assignee: The Provost Fellows and Scholars of the College of the Holy and Undivided Trinity of Queen Elizabeth, near Dublin
• Inventors: Hegarty, John, Barry, Liam Paul, O'Gorman, James Christopher, Folliot, Herve Armel Francois
• Primary Examiner(s): Jackson, Jr.; Jerome
• Application Number:
  US10/506,106
• Publication Number:
  US 20050104064A1
• Time in Patent Office: 2,318 Days
• Field of Search: 257/21
• US Class Current: 257/21
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 31/035236 Superlattices; Multiple quantum well structures
• CPC Class Codes: H01L 31/105 the potential barrier being of the PIN type
• CPC Class Codes: H01L 31/108 the potential barrier being of the Schottky type
• CPC Class Codes: H01L 31/1085 the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type

Abstract

A semiconductor photodetector (1) for detecting short duration laser light pulses of predetermined wavelength in a light signal (2) comprises a micro-resonator (3) of vertical Fabry-Perot construction having a Bragg mirror pair, namely, a front mirror (5) and a rear mirror (6) with an active region (8) located between the front and rear mirrors (5,6). An N-type substrate (11) supports the rear mirror (6). The light signal (2) is directed into the active region (8) through the front mirror (5) while a pump beam (17) is directed into the active region (8) at an end (18) thereof. The spacing between the front and rear mirrors (5,6) is such as to cause light of the predetermined wavelength to resonate between the mirrors (5,6). The semiconductor material of the active region (8) is selected so that one photon from each of the light signal (2) and the pump beam (17) are required to transfer one electron from a valence band (21) of the active region (8) across a bandgap (22) to a conduction band (20) so that the active region operates on the principle of Two-Photon Absorption. On the active region (8) being simultaneously subjected to the pump beam and light of the predetermined wavelength in the light signal (2) electrons are transferred by Two-Photon Absorption from the valence band (21) to the conduction band (20), thus causing a change in the voltage developed across the active region (8). The change in voltage is detected between an electrode (15) on the substrate (11) and electrodes (8) on the front mirror (5) thereby indicating the presence of light of the predetermined wavelength in the light signal (2).

Claims

1. A method for detecting a light signal of a predetermined wavelength by two photon absorption using an optically pumped photodetector, the method comprising:

providing the detector in the form of a resonator adapted to resonate in response to the light signal of the predetermined wavelength, the resonator having a plurality of spaced apart active semiconductor regions at locations substantially corresponding to anti-nodes of a resonating electromagnetic field, each active region defining a conduction band and at least one valence band, the conduction band defining with the corresponding valence band closest thereto an energy bandgap,

selecting the material of the active regions so that the energy bandgap of each active region is such that the photon energy of the light signal of the predetermined wavelength is less than half of the energy gap of the bandgap,

pumping the active regions with a pump light beam, the photon energy of which is not less than the energy gap of the band gap of each active region less the photon energy of the light signal of the predetermined wavelength, so that when the light signal of the predetermined wavelength is received simultaneously with the pump light beam a photon is absorbed by each active region from each of the light signal and the pump light beam to transfer an electron across the energy bandgap from the valence band to the conduction band of the corresponding active region,

directing the light signal into the active regions, and

monitoring the voltage across the active regions for detecting a change in voltage indicative of the light signal being of a predetermined wavelength.

4. A method as claimed in claim 1 in which each active region is of a material having non-linear absorbing characteristics of light in the predetermined wavelength.

5. A method as claimed in claim 1 in which each active region is of a material so that the active region does not substantially exhibit linear absorbing characteristics of light in the predetermined wavelength.

6. A method as claimed in claim 1 in which each active region is of material so that the energy bandgap of the active region is such that the photon energy of the light signal of the predetermined wavelength is less than half of the energy gap of the bandgap, and the wavelength of the light of the pump beam is selected so that the photon energy of the light of the pump beam is not less than the energy gap of the bandgap less the photon energy of the light of the predetermined wavelength.

7. A method as claimed in claim 1 in which each active region is of material so that the width of the energy bandgap of the active region is such as to minimise single photon absorption of light at the predetermined wavelength.

8. A method as claimed in claim 1 in which each active region is undoped.

9. A method as claimed in claim 1 in which each active region is doped.

15. A method as claimed in claim 1 in which each active region is provided by a quantum well.

21. A method as claimed in claim 1 in which the pump beam and the light signal are directed at the active regions at an angle to each other.

2. A method for operating an optical switch comprising a semiconductor photodetector, whereby the semiconductor photodetector is adapted for absorbing light of a predetermined wavelength and comprises:

a resonator adapted to resonate in response to a light signal of light of the predetermined wavelength, the resonator comprising;

a pair of spaced apart mirrors, a non-active region located between the mirrors, and a plurality of spaced apart active regions located in the non-active region for receiving the light signal and a pump light beam, the active regions being provided in the non-active region at locations corresponding to anti-nodes of an electromagnetic field resonating between the mirrors, each active region defining a conduction band and at least one valence band, the conduction band of each active region defining with the corresponding valence band closest to the conduction band an energy bandgap, the width of the energy bandgap being such as to require absorption of more than one photon to effect transition of one electron from the valence band to the conduction band, so that when the light signal of the predetermined wavelength is received by each active region simultaneously with the pump light beam, a photon is required from each of the light signal and the pump light beam to transfer an electron across the energy bandgap from the valence band to the conduction band of each active region to produce a detectable voltage change across the active regions indicative of the light signal of the predetermined wavelength, the optical switch is being responsive to the voltage change produced across the active regions of the resonator in response to light of the predetermined wavelength being absorbed by the photodetector for outputting an electrical signal, the method comprising;

directing a light beam comprising a plurality of co-propagating signals of respective different wavelengths at the photodetector, and

monitoring the output of the optical switch for detecting an electrical signal indicative of the light beam comprising a light signal of the predetermined wavelength.

3. A method as claimed in claim 2 in which the non-active region is substantially non-absorbing of light of the predetermined wavelength.

10. A method as claimed in claim 2 in which the photodetector is a direct bandgap semiconductor.

11. A method as claimed in claim 10 in which each active region is of material selected from any one or more of the following materials and any one or more of their alloys:

Gallium arsenide

Indium phosphide

Indium arsenide

Aluminium gallium arsenide

Gallium nitride

Aluminium nitride

Zinc selenide

Zinc sulphide.

12. A method as claimed in claim 2 in which the photodetector is an indirect bandgap semiconductor.

13. A method as claimed in claim 12 in which each active region is of material selected from any one or more of the following materials and any one or more of their alloys:

Silicon

Germanium

Gallium phosphide.

14. A method as claimed in claim 2 in which the photodetector is a direct one photon forbidden bandgap detector at the wavelength of the light of the predate predetermined wavelength.

16. A method as claimed in claim 2 in which the effective spacing between the mirrors is approximately half the wavelength of the light of predetermined wavelength or a harmonic thereof.

17. A method as claimed in claim 2 in which the mirrors are of respective reflectivities for simultaneously maximising the detection of the light of the predetermined wavelength and for preventing detection of light of other wavelengths.

18. A method as claimed in claim 2 in which at least one of the light signal and the pump light beam is directed into the active regions through one of the mirrors.

19. A method as claimed in claim 18 in which the reflectivity of the mirror through which the at least one of the light signal and the pump beam is passed is less than the reflectivity of the other mirror.

20. A method as claimed in claim 2 in which the mirrors are of respective reflectivities so that light in the light signal of wavelengths other than the predetermined wavelength passes through the detector substantially unimpeded.

22. A method as claimed in claim 2 in which the photodetector is adapted for detecting a light signal comprising pulsed light of the predetermined wavelength where the duration of each pulse is in the range of 1 femtosecond to 500 picoseconds.