Light emitting devices having a reflective bond pad and methods of fabricating light emitting devices having reflective bond pads
DCFirst Claim
1. A light emitting device, comprising:
- an active region comprising semiconductor material;
a first contact metal on the active region, the first contact metal having a first face adjacent the active region and a second face remote from the active region, and being sufficiently thin such that photons emitted by the active region pass through the first contact metal from the first face to the second face;
a photon absorbing wire bond pad on the second face of the first contact metal, the wire bond pad having an area less than the area of the first contact metal;
a reflective structure disposed entirely between the second face of the first contact metal and the wire bond pad and extending on the second face of the first contact metal to be substantially congruent with the wire bond pad; and
a second contact metal opposite the active region from the first contact metal,wherein the reflective structure comprises a layer of silver or aluminum directly on the second face of the first contact metal.
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Abstract
Light emitting devices include an active region of semiconductor material and a first contact on the active region. The first contact is configured such that photons emitted by the active region pass through the first contact. A photon absorbing wire bond pad is provided on the first contact. The wire bond pad has an area less than the area of the first contact. A reflective structure is disposed between the first contact and the wire bond pad such that the reflective structure has substantially the same area as the wire bond pad. A second contact is provided opposite the active region from the first contact. The reflective structure may be disposed only between the first contact and the wire bond pad. Methods of fabricating such devices are also provided.
51 Citations
11 Claims
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1. A light emitting device, comprising:
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an active region comprising semiconductor material; a first contact metal on the active region, the first contact metal having a first face adjacent the active region and a second face remote from the active region, and being sufficiently thin such that photons emitted by the active region pass through the first contact metal from the first face to the second face; a photon absorbing wire bond pad on the second face of the first contact metal, the wire bond pad having an area less than the area of the first contact metal; a reflective structure disposed entirely between the second face of the first contact metal and the wire bond pad and extending on the second face of the first contact metal to be substantially congruent with the wire bond pad; and a second contact metal opposite the active region from the first contact metal, wherein the reflective structure comprises a layer of silver or aluminum directly on the second face of the first contact metal. - View Dependent Claims (2, 3, 4, 5)
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6. A method of fabricating a light emitting device, comprising:
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forming an active region of semiconductor material; forming a first contact metal on the active region, the first contact metal having a first face adjacent the active region and a second face remote from the active region, and being sufficiently thin such that photons emitted by the active region pass through the first contact metal from the first face to the second face; forming a reflective structure entirely on the second face of the first contact metal and having an area less than an area of the first contact metal; forming a photon absorbing wire bond pad on reflective structure, the wire bond pad being substantially congruent to the reflective structure; and forming a second contact metal opposite the active region from the first contact metal, wherein forming a reflective structure comprises forming a reflective structure that comprises a layer of silver or aluminum directly on the second face of the first contact metal. - View Dependent Claims (7, 8, 9, 10, 11)
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Specification