High-density nonvolatile memory
First Claim
1. A nonvolatile memory cell comprising:
- at least a portion of a first conductor at a first height above a substrate and extending in a first direction;
a first polycrystalline semiconductor element above the first conductor, wherein the semiconductor element comprises a heavily doped P-type region and a heavily doped N-type region, without an antifuse layer between the heavily doped P-type region and the heavily doped N-type region; and
at least a portion of a second conductor above the semiconductor element and extending in a second direction, the second direction substantially different from the first direction.
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Accused Products
Abstract
An improved nonvolatile memory cell made by a method for fabricating a three dimensional monolithic memory with increased density. The memory cell includes at least a part of a first conductor, a semiconductor element, and at least a part of a second conductor. The method includes forming conductors preferably comprising tungsten, then filling and planarizing; above the conductors forming semiconductor elements, preferably comprising two diode portions, optionally forming an antifuse above or below both of the diode portions, and then filling and planarizing; and continuing to form conductors and semiconductor elements in multiple stories of memories. The arrangement of processing steps and the choice of materials decreases aspect ratio of each memory cell, improving the reliability of gap fill and preventing etch undercut.
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Citations
28 Claims
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1. A nonvolatile memory cell comprising:
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at least a portion of a first conductor at a first height above a substrate and extending in a first direction; a first polycrystalline semiconductor element above the first conductor, wherein the semiconductor element comprises a heavily doped P-type region and a heavily doped N-type region, without an antifuse layer between the heavily doped P-type region and the heavily doped N-type region; and at least a portion of a second conductor above the semiconductor element and extending in a second direction, the second direction substantially different from the first direction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A nonvolatile memory cell comprising:
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at least a portion of a first conductor at a first height above a substrate and extending in a first direction; a first polycrystalline semiconductor element above the first conductor, wherein the first polycrystalline semiconductor element comprises a heavily doped P-type region and a heavily doped N-type region; at least a portion of a second conductor above the first polycrystalline semiconductor element and extending in a second direction, the second direction substantially different from the first direction; and an antifuse layer disposed above the first polycrystalline semiconductor element and below the second conductor and without another antifuse layer between the heavily doped P-type region and the heavily doped N-type region. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A nonvolatile memory cell comprising:
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at least a portion of a first conductor at a first height above a substrate and extending in a first direction; a first polycrystalline semiconductor element above the first conductor, wherein the first polycrystalline semiconductor element comprises a heavily doped P-type region and a heavily doped N-type region; at least a portion of a second conductor above the first polycrystalline semiconductor element and extending in a second direction, the second direction substantially different from the first direction; and an antifuse layer disposed above the first conductor and below the first polycrystalline semiconductor element and without another antifuse layer between the heavily doped P-type region and the heavily doped N-type region. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28)
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Specification