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High-density nonvolatile memory

  • US 7,557,405 B2
  • Filed: 04/10/2006
  • Issued: 07/07/2009
  • Est. Priority Date: 12/19/2002
  • Status: Expired due to Fees
First Claim
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1. A nonvolatile memory cell comprising:

  • at least a portion of a first conductor at a first height above a substrate and extending in a first direction;

    a first polycrystalline semiconductor element above the first conductor, wherein the semiconductor element comprises a heavily doped P-type region and a heavily doped N-type region, without an antifuse layer between the heavily doped P-type region and the heavily doped N-type region; and

    at least a portion of a second conductor above the semiconductor element and extending in a second direction, the second direction substantially different from the first direction.

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