Segmented pillar layout for a high-voltage vertical transistor
First Claim
1. An apparatus comprising:
- a plurality of transistor segments arranged on a die, each transistor segment having a racetrack shape with a length elongated in a first lateral direction and a width in a second lateral direction, each transistor segment including;
a pillar of a semiconductor material, the pillar including an extended drain region that extends in a vertical direction through the die;
a first and second dielectric regions disposed on opposite sides of the pillar, respectively, the first dielectric region being laterally surrounded by the pillar, and the second dielectric region laterally surrounding the pillar;
first and second field plates respectively disposed in the first and second dielectric regions;
wherein the transistor segments are arranged into a plurality of sections, a first section comprising a first row of transistor segments arranged in a side-by-side relationship in the second lateral direction, and a second section comprising a second row of transistor segments arranged in the side-by-side relationship in the second lateral direction, the second dielectric region of each transistor segment of the first section being merged with the second dielectric region of each transistor segment of the second section.
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Abstract
In one embodiment, a transistor fabricated on a semiconductor die includes a first section of transistor segments disposed in a first area of the semiconductor die, and a second section of transistor segments disposed in a second area of the semiconductor die adjacent the first area. Each of the transistor segments in the first and second sections includes a pillar of a semiconductor material that extends in a vertical direction. First and second dielectric regions are disposed on opposite sides of the pillar. First and second field plates are respectively disposed in the first and second dielectric regions. Outer field plates of transistor segments adjoining first and second sections are either separated or partially merged.
199 Citations
21 Claims
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1. An apparatus comprising:
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a plurality of transistor segments arranged on a die, each transistor segment having a racetrack shape with a length elongated in a first lateral direction and a width in a second lateral direction, each transistor segment including; a pillar of a semiconductor material, the pillar including an extended drain region that extends in a vertical direction through the die; a first and second dielectric regions disposed on opposite sides of the pillar, respectively, the first dielectric region being laterally surrounded by the pillar, and the second dielectric region laterally surrounding the pillar; first and second field plates respectively disposed in the first and second dielectric regions; wherein the transistor segments are arranged into a plurality of sections, a first section comprising a first row of transistor segments arranged in a side-by-side relationship in the second lateral direction, and a second section comprising a second row of transistor segments arranged in the side-by-side relationship in the second lateral direction, the second dielectric region of each transistor segment of the first section being merged with the second dielectric region of each transistor segment of the second section. - View Dependent Claims (2, 3, 4, 5, 6)
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7. An apparatus comprising:
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a plurality of transistor segments arranged on a die, each transistor segment having a racetrack shape with a length elongated in a first lateral direction and a width in a second lateral direction, each transistor segment including; a pillar of a semiconductor material, the pillar including an extended drain region that extends in a vertical direction through the die; a first and second dielectric regions disposed on opposite sides of the pillar, respectively, the first dielectric region being laterally surrounded by the pillar, and the second dielectric region laterally surrounding the pillar; first and second field plates respectively disposed in the first and second dielectric regions; wherein the transistor segments are arranged into a plurality of sections, a first section comprising a first row of transistor segments arranged in a side-by-side relationship in the second lateral direction, and a second section comprising a second row of transistor segments arranged in the side-by-side relationship in the second lateral direction, the transistor segments of the first and second sections each being separated in the first lateral direction by a plurality of dummy pillars of the semiconductor material, each dummy pillar being centrally located between rounded ends of first and second adjacent pairs of transistor segments of the first and second sections, respectively. - View Dependent Claims (8, 9, 10)
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11. A transistor comprising:
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a semiconductor die; a plurality of transistor segments arranged to substantially cover the semiconductor die, each transistor segment having a length that extends in a first lateral direction and a width that extends in a second lateral direction, the length being at least 20 times greater than the width, each transistor segment including; a pillar of a semiconductor material, the pillar including an extended drain region that extends in a vertical direction through the semiconductor die, the pillar extending in the first and second lateral directions to form a continuous racetrack-shaped ring or oval; first and second dielectric regions disposed on opposite sides of the pillar, respectively, the first dielectric re ion being laterally surrounded by the pillar, and the second dielectric region laterally surrounding the pillar; first and second field plates respectively disposed in the first and second dielectric regions; and wherein the transistor segments are arranged into two or more sections located in corresponding areas of the semiconductor die, one or more dummy pillars separating each of the two or more sections, the second dielectric region of each transistor segment of the first section being merged with the second dielectric region of each transistor segment of the second section. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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18. A transistor fabricated on a semiconductor die, comprising:
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a first section of transistor segments disposed in a first area of the semiconductor die; a second section of transistor segments disposed in a second area of the semiconductor die adjacent the first area, each of the transistor segments in the first and second sections including; a pillar of a semiconductor material that extends in a vertical direction, the pillar having a source region disposed near a top surface of the die, and an extended drain region disposed beneath the source region, the pillar extending in the first and second lateral directions to form a continuous racetrack-shaped ring or oval; first and second dielectric regions disposed on opposite sides of the pillar, respectively, the first dielectric region being laterally surrounded by the pillar, and the second dielectric region laterally surrounding the pillar, the second dielectric region of each transistor segment of the first section being merged with the second dielectric region of each transistor segment of the second section; first and second field plates respectively disposed in the first and second dielectric regions;
the second field plates of pairs of adjacent transistor segments of the first and second sections being either respectively separated or partially merged; andwherein the first section comprises a first row of transistor segments arranged in a side-by-side relationship in the second lateral direction, and the second section comprises a second row of transistor segments arranged in the side-by-side relationship in the second direction, the first and second sections being separated in the first lateral direction by a dummy pillar of the semiconductor material. - View Dependent Claims (19, 20, 21)
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Specification