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Material for electronic device and process for producing the same

  • US 7,560,396 B2
  • Filed: 03/31/2003
  • Issued: 07/14/2009
  • Est. Priority Date: 03/29/2002
  • Status: Expired due to Fees
First Claim
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1. A process for treating a substrate by plasma nitridation, comprising:

  • providing the substrate having an oxide film thereon; and

    irradiating plasma having an electron temperature of 0.5 to 2.0 eV on the oxide film using a mixed gas comprising argon gas and nitrogen gas to form an oxynitride film, whereinthe plasma is irradiated on the oxide film at a temperature of 250 to 500°

    C. and under a pressure of 7 to 260 Pa,a nitrogen atom content in the oxynitride film has a distribution such that the maximum value Ns of the nitrogen atom content in the oxynitride film at a surface of the oxynitride film opposite a surface facing the substrate is 10 to 40 atomic percent, and the maximum value Nb of the nitrogen atom content in the oxynitride film at the surface facing the substrate side is 0 to 10 atomic percent,the ratio Ns/Nb is 2 or more, andthe oxynitride film has an electrical film thickness from 1.0 to 2.5 nm.

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