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Laser irradiation method and method of manufacturing a semiconductor device

  • US 7,560,397 B2
  • Filed: 02/22/2007
  • Issued: 07/14/2009
  • Est. Priority Date: 12/11/2001
  • Status: Expired due to Term
First Claim
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1. A laser irradiation method comprising:

  • determining, from pattern information of a sub-island obtained by patterning a semiconductor film formed over a substrate, a specific region on the substrate that is to be irradiated with laser light, the region including the sub-island;

    using an optical system to partially overlap beam spots of plural laser lights that are outputted from plural laser oscillation apparatuses to form one beam spot;

    using a slit to reduce a width in a direction perpendicular to a scanning direction of the beam spot formed;

    running the beam spot with the reduced width over the specific region to enhance crystallinity of the sub-island wherein the sub-island is included in an area irradiated in the reduced width by the running of the beam spot; and

    patterning the sub-island with enhanced crystallinity to form an island.

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