Laser irradiation method and method of manufacturing a semiconductor device
First Claim
1. A laser irradiation method comprising:
- determining, from pattern information of a sub-island obtained by patterning a semiconductor film formed over a substrate, a specific region on the substrate that is to be irradiated with laser light, the region including the sub-island;
using an optical system to partially overlap beam spots of plural laser lights that are outputted from plural laser oscillation apparatuses to form one beam spot;
using a slit to reduce a width in a direction perpendicular to a scanning direction of the beam spot formed;
running the beam spot with the reduced width over the specific region to enhance crystallinity of the sub-island wherein the sub-island is included in an area irradiated in the reduced width by the running of the beam spot; and
patterning the sub-island with enhanced crystallinity to form an island.
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Abstract
A method of manufacturing a semiconductor device is provided which uses a laser crystallization method capable of increasing substrate processing efficiency. An island-like semiconductor film including one or more islands is formed by patterning (sub-island). The sub-island is then irradiated with laser light to improve its crystallinity, and thereafter patterned to form an island. From pattern information of a sub-island, a laser light scanning path on a substrate is determined such that at least the sub-island is irradiated with laser light. In other words, the present invention runs laser light so as to obtain at least the minimum degree of crystallization of a portion that has to be crystallized, instead of irradiating the entire substrate with laser light.
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Citations
34 Claims
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1. A laser irradiation method comprising:
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determining, from pattern information of a sub-island obtained by patterning a semiconductor film formed over a substrate, a specific region on the substrate that is to be irradiated with laser light, the region including the sub-island; using an optical system to partially overlap beam spots of plural laser lights that are outputted from plural laser oscillation apparatuses to form one beam spot; using a slit to reduce a width in a direction perpendicular to a scanning direction of the beam spot formed; running the beam spot with the reduced width over the specific region to enhance crystallinity of the sub-island wherein the sub-island is included in an area irradiated in the reduced width by the running of the beam spot; and patterning the sub-island with enhanced crystallinity to form an island. - View Dependent Claims (2, 3, 4, 5)
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6. A laser irradiation method comprising:
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determining, from pattern information of a sub-island obtained by patterning a semiconductor film formed over a substrate, a specific region on the substrate that is to be irradiated with laser light, the region including the sub-island; using an optical system to partially overlap beam spots of plural laser lights that are outputted from plural laser oscillation apparatuses so that centers draw a straight line to form one beam spot; using a slit to reduce a width in a direction perpendicular to a scanning direction of the beam spot formed; running the beam spot with the reduced width over the specific region to enhance crystallinity of the sub-island wherein the sub-island is included in an area irradiated in the reduced width by the running of the beam spot; and patterning the sub-island with enhanced crystallinity to form an island. - View Dependent Claims (7, 8, 9, 10)
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11. A laser irradiation method comprising:
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patterning a semiconductor film formed over a substrate to form a sub-island using a mask; detecting pattern information of the sub-island using a CCD; grasping a position of the substrate by checking pattern information of the mask against the detected pattern information of the sub-island; determining, from the pattern information of the sub-island, a specific region on the substrate that is to be irradiated with a laser beam spot, the region including the sub-island; using an optical system to partially overlap beam spots of plural laser lights that are outputted from plural laser oscillation apparatuses to form one beam spot as the laser beam spot; using a slit to reduce a width in a direction perpendicular to a scanning direction of the beam spot formed; running the beam spot with the reduced width over the specific region to enhance crystallinity of the sub-island wherein the sub-island is included in an area irradiated in the reduced width by the running of the beam spot; and patterning the sub-island with enhanced crystallinity to form an island. - View Dependent Claims (12, 13, 14, 15)
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16. A laser irradiation method comprising:
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patterning a semiconductor film formed over a substrate to form a sub-island using a mask; detecting pattern information of the sub-island using a CCD; grasping a position of the substrate by checking pattern information of the mask against the detected pattern information of the sub-island; determining, from the pattern information of the sub-island, a specific region on the substrate that is to be irradiated with a laser beam spot, the region including the sub-island; using an optical system to partially overlap beam spots of plural laser lights that are outputted from plural laser oscillation apparatuses so that centers draw a straight line to form one beam spot as the laser beam spot; using a slit to reduce a width in a direction perpendicular to a scanning direction of the beam spot formed; running the beam spot with the reduced width over the specific region to enhance crystallinity of the sub-island wherein the sub-island is included in an area irradiated in the reduced width by the running of the beam spot; and patterning the sub-island with enhanced crystallinity to form an island. - View Dependent Claims (17, 18, 19, 20)
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21. A laser irradiation method comprising:
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determining, from pattern information of a sub-island obtained by patterning a semiconductor film formed over a substrate with a marker as the reference, a specific region on the substrate that is to be irradiated with laser light, the region including the sub-island; using an optical system to partially overlap beam spots of plural laser lights that are outputted from plural laser oscillation apparatuses to form one beam spot; using a slit to reduce a width in a direction perpendicular to a scanning direction of the beam spot formed; running the beam spot with the reduced width over the specific region to enhance crystallinity of the sub-island wherein the sub-island is included in an area irradiated in the reduced width by the running of the beam spot; and patterning the sub-island with enhanced crystallinity to form an island. - View Dependent Claims (23, 25, 27, 29, 31, 33)
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22. A laser irradiation method comprising:
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determining, from pattern information of the sub-island obtained by patterning a semiconductor film formed over a substrate with the marker as the reference, a specific region on the substrate that is to be irradiated with laser light, the region including the sub-island; using an optical system to partially overlap beam spots of plural laser lights that are outputted from plural laser oscillation apparatuses so that centers draw straight lines to form one beam spot; using a slit to reduce the width in the direction perpendicular to the scanning direction of the beam spot formed; running the beam spot with the reduced width over the specific region to enhance crystallinity of the sub-island wherein the sub-island is included in an area irradiated in the reduced width by the running of the beam spot; and patterning the sub-island with enhanced crystallinity to form an island. - View Dependent Claims (24, 26, 28, 30, 32, 34)
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Specification