Highly sensitive, fast pixel for use in an image sensor

• US 7,560,701 B2
• Filed: 08/11/2006
• Issued: 07/14/2009
• Est. Priority Date: 08/12/2005
• Status: Active Grant

• Current Assignee: Ams Sensors Singapore Pte. Ltd. (Ams-Osram AG)
• Original Assignee: MESA IMAGING AG (Ams-Osram AG)
• Inventors: Buttgen, Bernhard, Oggier, Thierry, Lehmann, Michael
• Primary Examiner(s): Porta; David P
• Assistant Examiner(s): Taningco; Marcus H
• Application Number:
  US11/503,524
• Publication Number:
  US 20070034779A1
• Time in Patent Office: 1,068 Days
• Field of Search: 250/208.1, 250/370.09
• US Class Current: 250/370.09
• CPC Class Codes: G01J 3/2803 using photoelectric array detector
• CPC Class Codes: H01L 27/14603 Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
• CPC Class Codes: H01L 31/02024 Position sensitive and lateral effect photodetectors; Quadrant photodiodes

Abstract

The pixel (1) for use in an image sensor comprises a plurality of small-sized radiation-sensitive elements (2.1-2.9) for converting incident radiation into electric signals, the radiation-sensitive elements (2.1-2.9) being properly interconnected to form a larger radiation-sensitive area. The pixel (1) further comprises a plurality of storage elements (3A-3D) for storing the electric signals. The pixel further comprises transfer means for transferring the electric signals from the radiation-sensitive elements (2.1-2.9) to any selected one of the storage elements (3A-3D). The pixel (1) exhibits a high optical sensitivity and a high demodulation speed, and is especially suited for distance-measuring sensors based on the time-of-flight (TOF) principle or interferometry.

Claims

1. A pixel for use in an image sensor, comprising

a plurality of storage elements for storing charge carriers, each of the storage elements comprising a diffusion well or an integration gate for accumulating the charge carriers, and

a plurality of radiation-sensitive elements for converting incident radiation into the charge carriers, wherein each of the radiation sensitive elements includes:

outputs, each of the outputs being electrically connected a different one of the storage elements, and a charge transport system for transporting the charge carriers to a selected one of the outputs with the charge carriers being summed up in each of the storage elements from the plurality of radiation-sensitive elements.

2. An image sensor comprising a plurality of pixels arranged in a one- or two-dimensional array, characterized in that the pixels are pixels according to claim 1.

3. The pixel according to claim 1, wherein the charge transport system comprises at least two CCD gate electrodes, each CCD gate electrode having a connection for applying an electric potential across the radiation-sensitive element.