Semiconductor light emitting element and fabrication method thereof

• US 7,560,737 B2
• Filed: 09/20/2005
• Issued: 07/14/2009
• Est. Priority Date: 09/29/2004
• Status: Expired due to Fees

• Current Assignee: Sanken Electric Company Limited
• Original Assignee: Sanken Electric Company Limited
• Inventors: Murofushi, Hitoshi, Takeda, Shiro
• Primary Examiner(s): Parker; Kenneth A
• Assistant Examiner(s): Ho; Anthony
• Application Number:
  US11/231,071
• Publication Number:
  US 20060076565A1
• Time in Patent Office: 1,393 Days
• Field of Search: 257/79
• US Class Current: 257/79
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

In a semiconductor light emitting element, multiple bosses having a cylindrical shape and dispersed like islands, and recesses are formed on the upper surface of a window layer. A contact electrode is formed on the upper surface of the bosses. A transparent dielectric film is formed in the recesses. A transparent conductor film is formed on the transparent dielectric film and the contact electrode.

Claims

1. A semiconductor light emitting element, comprising:

a first semiconductor layer of first conductivity type;

an active layer formed on said first semiconductor layer;

a semiconductor layer of second conductivity type having a one surface which is formed on said active layer and whose one surface comprises an optical window from which a light is extracted, and having a plurality of recesses formed to define a plurality of bosses;

a dielectric film formed of a dielectric material having light transmissivity in said recesses to fill up said recesses and to allow the light to be extracted therefrom; and

a conductor film formed on said recesses and bosses and having light transmissivity and formed on said one surface of said semiconductor layer and

an electrode formed on a region of said conductor film opposing to said optical window,

wherein said dielectric film formed in said recesses does not have low-resistive contact with said conductor film, and said conductor film and said semiconductor layer of second conductivity type are electrically connected via said bosses to each other.

2. The semiconductor light emitting element according to claim 1, wherein a current flows via said bosses, but does not flow via said dielectric film formed in said recesses.

3. The semiconductor light emitting element according to claim 1, further comprising a conductive film having a light transmissivity, which is formed on said bosses but not formed on said recesses,

wherein said conductor film and said bosses are electrically connected to each other via said conductive film.

4. The semiconductor light emitting element according to claim 1, wherein a refraction index n1 of said conductor film, a refraction index n2 of said dielectric film, and a refraction index n3 of said semiconductor layer of second conductivity type satisfy a relationship of

n1≦

n2≦

n3.

5. The semiconductor light emitting element according to claim 1, wherein a width X of said bosses and a height Y of said bosses satisfy a relationship of

(Y/3)≦

X≦

3Y.

6. The semiconductor light emitting element according to claim 1, wherein:

a wavelength λ

of a light emitted in said semiconductor layer of second conductivity type and a width X of said bosses satisfy a relationship of

X≧

(λ

/2); and

the wavelength λ

of the light emitted in said semiconductor layer of second conductivity type and a height Y of said bosses satisfy a relationship of

Y≧

(λ

/2).

7. The semiconductor light emitting element according to claim 1, further comprising a protection film which is formed on said conductor film.

8. The semiconductor light emitting element according to claim 7, wherein a refraction index n1 of said conductor film, a refraction index n2 of said dielectric film, a refraction index n3 of said semiconductor layer and a refraction index n4 of said protection film satisfy relationships of

n4<

n1≦

n2<

n3.

9. The semiconductor light emitting element according to claim 1, wherein said electrode is formed in a center region of said optical window.