Lighting module and method for the production thereof
First Claim
1. A light emitting semiconductor component with at least one thin-film light emitting diode chip which is applied on a chip carrier having electrical connecting conductors and an epitaxial semiconductor layer sequence, wherein the semiconductor layer sequence is arranged on a carrier and comprises:
- (a) an n-conducting semiconductor layer, a p-conducting semiconductor layer and an electromagnetic radiation generating region arranged between these two semiconductor layers;
(b) at least one semiconductor layer with at least one micropatterned, rough area;
(c) a coupling-out area essentially defined by a main area facing away from the carrier;
(d) a housing frame arranged on one of the chip carrier and a housing bottom which is different than the chip carrier, the housing bottom including a plurality of electrical connecting conductors to which the chip carrier is applied and electrically connected such that a housing cavity is defined in which the thin-film light emitting diode is arranged; and
(e) a radiation-transmissive covering plate arranged to essentially at least one of cover and close an opening of the housing cavity;
wherein a reflective layer is arranged at a main area of the semiconductor facing toward the carrier, which reflective layer reflects at least one part of the electromagnetic radiation generated in the semiconductor sequence layer back into the semiconductor sequence layer, and the coupling-out area adjoins at least one element of the group consisting of a region filled with gas, a region filled with a vacuum, and a luminescence conversion material wavelength-converting at least one part of an electromagnetic radiation emitted by the thin-film light emitting diode chip and adjoining the region filled with gas or the vacuum;
the epitaxial semiconductor layer sequence generates electromagnetic radiation at a wavelength in the UV range;
the thin-film light emitting diode chip has a thickness of less than 100 μ
m inclusive; and
wherein at least one part of the luminescence conversion material is applied to at least one of two main areas of the covering plate, the luminescence conversion material completely covering one of the main areas of the covering plate.
3 Assignments
0 Petitions
Accused Products
Abstract
An illumination module with at least one thin-film light emitting diode chip which is applied on a chip carrier having electrical connecting conductors and has a first and a second electrical connection side and also an fabricated semiconductor layer sequence. The semiconductor layer sequence has an n-conducting semiconductor layer, a p-conducting semiconductor layer and an electromagnetic radiation generating region arranged between these two semiconductor layers and is arranged on a carrier. Moreover, it has a reflective layer at a main area facing toward the carrier, which reflective layer reflects at least one part of the electromagnetic radiation generated in the semiconductor layer sequence back into the latter. The semiconductor layer sequence has at least one semiconductor layer with at least one micropatterned, rough area. The coupling-out area of the thin-film light emitting diode chip is essentially defined by a main area remote from the reflective layer and is free of housing material such as potting or encapsulating material.
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Citations
46 Claims
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1. A light emitting semiconductor component with at least one thin-film light emitting diode chip which is applied on a chip carrier having electrical connecting conductors and an epitaxial semiconductor layer sequence, wherein the semiconductor layer sequence is arranged on a carrier and comprises:
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(a) an n-conducting semiconductor layer, a p-conducting semiconductor layer and an electromagnetic radiation generating region arranged between these two semiconductor layers; (b) at least one semiconductor layer with at least one micropatterned, rough area; (c) a coupling-out area essentially defined by a main area facing away from the carrier; (d) a housing frame arranged on one of the chip carrier and a housing bottom which is different than the chip carrier, the housing bottom including a plurality of electrical connecting conductors to which the chip carrier is applied and electrically connected such that a housing cavity is defined in which the thin-film light emitting diode is arranged; and (e) a radiation-transmissive covering plate arranged to essentially at least one of cover and close an opening of the housing cavity; wherein a reflective layer is arranged at a main area of the semiconductor facing toward the carrier, which reflective layer reflects at least one part of the electromagnetic radiation generated in the semiconductor sequence layer back into the semiconductor sequence layer, and the coupling-out area adjoins at least one element of the group consisting of a region filled with gas, a region filled with a vacuum, and a luminescence conversion material wavelength-converting at least one part of an electromagnetic radiation emitted by the thin-film light emitting diode chip and adjoining the region filled with gas or the vacuum; the epitaxial semiconductor layer sequence generates electromagnetic radiation at a wavelength in the UV range; the thin-film light emitting diode chip has a thickness of less than 100 μ
m inclusive; andwherein at least one part of the luminescence conversion material is applied to at least one of two main areas of the covering plate, the luminescence conversion material completely covering one of the main areas of the covering plate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 45)
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41. A light emitting semiconductor component with at least one thin-film light emitting diode chip which is applied on a chip carrier having electrical connecting conductors and an epitaxial semiconductor layer sequence, wherein the semiconductor layer sequence is arranged on a carrier and comprises;
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(a) an n-conducting semiconductor layer, a p-conducting semiconductor layer and an electromagnetic radiation generating region arranged between these two semiconductor layers; (b) at least one semiconductor layer with at least one micropatterned, rough area; (c) a housing frame arranged on one of the chip carrier and a housing bottom which is different than the chip carrier, the housing bottom including a plurality of electrical connecting conductors to which the chip carrier is applied and electrically connected such that a housing cavity is defined in which the thin-film light emitting diode is arranged; and (d) a radiation-transmissive covering plate arranged to essentially at least one of cover and close an opening of the housing cavity; wherein a reflective layer is arranged at a main area of the semiconductor layer sequence facing toward the carrier, which reflective layer reflects at least one part of the electromagnetic radiation generated in the semiconductor layer sequence back into the semiconductor layer sequence; an emission side of the thin-film light emitting diode chip facing away from the chip carrier is free of housing material; the carrier on which the semiconductor layer sequence is arranged is a carrier substrate of the thin-film light emitting diode chip, said carrier substrate being arranged between the chip carrier and the reflective layer; the epitaxial semiconductor layer sequence generates electromagnetic radiation at a wavelength in the UV range; the thin-film light emitting diode chip has a thickness of less than 100 μ
m inclusive; andwherein at least one part of the luminescence conversion material is applied to at least one of two main areas of the covering plate, the luminescence conversion material completely covering one of the main areas of the covering plate. - View Dependent Claims (42)
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43. A light emitting semiconductor component with at least one thin-film light emitting diode chip which is applied on a chip carrier having electrical connecting conductors and an epitaxial semiconductor layer sequence, wherein the semiconductor layer sequence is arranged on a carrier and comprises:
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(a) an n-conducting semiconductor layer, a p-conducting semiconductor layer and an electromagnetic radiation generating region arranged between these two semiconductor layers; (b) at least one semiconductor layer with at least one micro-patterned, rough area; (c) a housing frame arranged on one of the chip carrier and a housing bottom which is different than the chip carrier, the housing bottom including a plurality of electrical connecting conductors to which the chip carrier is applied and electrically connected such that a housing cavity is defined in which the thin-film light emitting diode is arranged; and (d) a radiation-transmissive covering plate arranged to essentially at least one of cover and close an opening of the housing cavity; wherein a reflective layer is arranged at a main area of the semiconductor layer sequence facing toward the carrier, which reflective layer reflects at least one part of the electromagnetic radiation generated in the semiconductor layer sequence back into the semiconductor layer sequence; an emission side of the thin-film light emitting diode chip facing away from the chip carrier is free of housing material; a growth substrate on which the epitaxial semiconductor layer sequence is grown is removed at least for the most part; and the thin-film light emitting diode chip is free of a carrier substrate at the emission side of the thin-film light emitting diode chip facing away from the chip carrier; the epitaxial semiconductor layer sequence generates electromagnetic radiation at a wavelength in the UV range; the thin-film light emitting diode chip has a thickness of less than 100 μ
m inclusive; andwherein at least one part of the luminescence conversion material is applied to at least one of two main areas of the covering plate, the luminescence conversion material completely covering one of the main areas of the covering plate.
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44. A light emitting semiconductor component with at least one thin-film light emitting diode chip which is applied on a chip carrier having electrical connecting conductors and also an epitaxial semiconductor layer sequence, wherein the semiconductor layer sequence is arranged on a carrier and comprises:
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(a) an n-conducting semiconductor layer, a p-conducting semiconductor layer and an electromagnetic radiation generating region arranged between these two semiconductor layers; and (b) at least one semiconductor layer with at least one micropatterned, rough area; wherein a reflective layer is arranged at a main area of the semiconductor layer sequence facing toward the carrier, which reflective layer reflects at least one part of the electromagnetic radiation generated in the semiconductor layer sequence back into the latter; an emission side of the thin-film light emitting diode chip facing away from the chip carrier is free of housing material; the semiconductor component having a housing frame and electrical connectors, said semiconductor being arranged on one of the chip carrier and a housing bottom which is different than the chip carrier, the chip carrier being applied to and electrically connected to the electrical connecting conductors of the semiconductor component such that a housing cavity is defined in which the thin-film light emitting diode chip is arranged; the semiconductor component comprises a radiation-transmissive covering plate fitted such that the covering plate essentially at least one of covers and closes an opening of the housing cavity; and a luminescence conversion material that wavelength-converts at least one part of the electromagnetic radiation emitted by the thin-film light emitting diode chip is admixed with the covering plate; the epitaxial semiconductor layer sequence generates electromagnetic radiation at a wavelength in the UV range; and wherein the thin-film light emitting diode chip has a thickness of less than 100 μ
m inclusive. - View Dependent Claims (46)
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Specification