Microelectromechanical system pressure sensor and method for making and using

• US 7,560,788 B2
• Filed: 09/20/2004
• Issued: 07/14/2009
• Est. Priority Date: 09/20/2004
• Status: Expired due to Fees

• Current Assignee: Amphenol Thermometrics, Inc. (Amphenol Corporation)
• Original Assignee: General Electric Company
• Inventors: Wu, Guanghua (George), Fortin, Jeffrey, Subramanian, Kanakasabapathi
• Primary Examiner(s): Nguyen; Thinh T
• Application Number:
  US10/945,399
• Publication Number:
  US 20060063354A1
• Time in Patent Office: 1,758 Days
• Field of Search: 438/53, 438/396, 438/459, 257/108, 257/414, 257/415, 257/417
• US Class Current: 257/415
• CPC Class Codes: G01L 1/148 using semiconductive material, e.g. silicon
• CPC Class Codes: G01L 9/0073 using a semiconductive diaphragm

Abstract

According to some embodiments, a conducting layer is formed on a first wafer. An insulating layer is formed on a second wafer. The insulating layer includes a cavity and a conducting area may be formed in the second wafer proximate to the cavity. The side of the conducting layer opposite the first wafer is bonded to the side of the insulating layer opposite the second wafer. At least some of the first wafer is then removed, without removing at least some of the conducting layer, to form a conducting diaphragm that is substantially parallel to the second wafer. In this way, an amount of capacitance between the diaphragm and the conducting area may be measured to determine an amount of pressure being applied to the diaphragm.

Claims

1. A sensor apparatus, comprising:

a wafer having a substantially flat surface defining a plane and lacking a cavity;

an insulating layer on the surface of the wafer, the insulating layer including a cavity and a reference capacitor spaced apart from said cavity, said reference capacitor being unaffected by a pressure change;

a bias area associated with the wafer and disposed apart from the conducting portion;

a conducting portion associated with the wafer and proximate to the cavity such that the conducting portion is not in direct contact with the insulating layer; and

a conducting diaphragm bonded to the insulating layer, wherein the conducting diaphragm covers the cavity and is substantially parallel to the plane.

2. The apparatus of claim 1, wherein the wafer is a lightly doped silicon wafer and the conducting portion comprises a highly doped conducting area.

3. The apparatus of claim 1, wherein the conducting diaphragm is deformable in a direction substantially normal to the plane.

4. The apparatus of claim 3, wherein the conducting portion and the conducting diaphragm are electrically isolated from each other, and a pressure is to be measured based at least in part on capacitance between the conducting portion and the conducting diaphragm.

5. The apparatus of claim 4, wherein a voltage level is associated with at least one of the conducting portion and the conducting diaphragm.

6. The apparatus of claim 5, wherein an increase in pressure is associated with an increase in capacitance.

7. The apparatus of claim 1, further comprising:

a non-conducting protective layer on the conducting portion.

8. The apparatus of claim 1, further comprising at least one of:

(i) a pressure electrode, (ii) a ground electrode, (iii) a reference electrode, or (iv) a bias electrode.

9. A pressure sensor, comprising:

a lightly doped silicon wafer having a substantially flat surface defining a plane and lacking a cavity;

an insulating layer formed on the surface of the silicon wafer, the insulating layer including a cavity and a reference capacitor spaced apart from said cavity, said reference capacitor being unaffected by a pressure change;

a bias implant area in the silicon wafer in an area spaced apart from the conductive implant area;

a highly doped conductive implant area in the silicon wafer in an area proximate to the cavity, wherein the insulating layer is not in direct contact with the highly doped conductive implant area;

a conducting diaphragm bonded to the insulating layer, wherein the conducting diaphragm covers the cavity and is substantially parallel to the plane; and

a device to measure capacitance between the implant area and the conducting diaphragm.

10. A system, comprising:

a microelectromechanical system pressure sensor, including;

a wafer having a substantially flat surface defining a plane and lacking a cavity,

an insulating layer on the surface of the wafer, the insulating layer including a cavity and a reference capacitor spaced apart from said cavity, said reference capacitor being unaffected by a pressure change,

a bias area associated with the wafer and disposed apart from the conducting portion;

a conducting portion associated with the wafer and proximate to the cavity such that the conducting portion is not in direct contact with the insulating layer, and

a conducting diaphragm bonded to the insulating layer, wherein the conducting diaphragm covers the cavity and is substantially parallel to the plane; and

a pressure dependent device.

11. The system of claim 10, wherein the pressure dependent device is associated with at least one of:

(i) a pressure display, (ii) a pressure monitor, (iii) an ultrasonic transducer, (iv) a medical device, and (v) a barometer.