Modulation of electromagnetic radiation with electrically controllable composite material

• US 7,561,320 B2
• Filed: 10/26/2007
• Issued: 07/14/2009
• Est. Priority Date: 10/26/2007
• Status: Active Grant

• Current Assignee: Hewlett Packard Enterprise Development LP (Hewlett-Packard Enterprise Company)
• Original Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Inventors: Wang, Shih-Yuan, Williams, R. Stanley, Bratkovski, Alexandre
• Primary Examiner(s): Schwartz; Jordan M.
• Assistant Examiner(s): JONES, JAMES
• Application Number:
  US11/977,886
• Publication Number:
  US 20090109516A1
• Time in Patent Office: 627 Days
• Field of Search: 359/238, 359/245
• US Class Current: 359/238
• CPC Class Codes: G02F 2202/30 Metamaterials
• CPC Class Codes: G03H 1/0005 Adaptation of holography to specific applications holographic optical element G02B5/32; holographic scanner G02B26/106; recognition using holographic mask G06V10/88; holographic memories G11B7/0065, G11C13/042
• CPC Class Codes: G03H 1/02 Details of features involved during the holographic process; Replication of holograms without interference recording
• CPC Class Codes: G03H 1/2294 Addressing the hologram to an active spatial light modulator
• CPC Class Codes: G03H 2001/0224 Active addressable light modulator, i.e. Spatial Light Modulator [SLM] corresponding details, see subgroups of G03H2225/00
• CPC Class Codes: G03H 2225/12 2D SLM
• CPC Class Codes: G03H 2225/22 Electrically addressed SLM [EA-SLM]
• CPC Class Codes: H10B 63/80 Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
• CPC Class Codes: H10N 70/20 Multistable switching devices, e.g. memristors
• CPC Class Codes: H10N 70/245 the species being metal cations, e.g. programmable metallization cells
• CPC Class Codes: H10N 70/257 based on radiation or particle beam assisted switching, e.g. optically controlled devices
• CPC Class Codes: H10N 70/826 adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
• CPC Class Codes: H10N 70/881 Switching materials
• CPC Class Codes: H10N 70/882 Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
• CPC Class Codes: H10N 70/8822 Sulfides, e.g. CuS
• CPC Class Codes: H10N 70/8825 Selenides, e.g. GeSe
• CPC Class Codes: H10N 70/8828 Tellurides, e.g. GeSbTe
• CPC Class Codes: H10N 70/8836 Complex metal oxides, e.g. perovskites, spinels

Abstract

An apparatus and related methods for modulating an electromagnetic radiation beam are described. A composite material is positioned in the path of the radiation beam, the composite material comprising a plurality of commonly oriented metallic first lines spaced apart by less than a wavelength of the radiation beam and a plurality of commonly oriented metallic second lines also spaced apart by less than that wavelength. The second lines are positioned in a crossing arrangement with the first lines, a crosspoint location being defined where each first line crosses each second line. An electrically programmable impedance memory element is positioned at each crosspoint location and is electrically coupled between the first and second lines corresponding to that crosspoint location, each impedance memory element having an electrically programmed state. The composite material modulates the radiation beam according to the electrically programmed states of the impedance memory elements.

Claims

1. An apparatus, comprising:

a source of a radiation beam having a wavelength; and

a composite material, comprising;

a plurality of commonly oriented metallic first lines spaced apart by less than said wavelength;

a plurality of commonly oriented metallic second lines spaced apart by less than said wavelength and positioned in a crossing arrangement with said first lines, a crosspoint location being defined where each said first line crosses each said second line, the crosspoint location having a dimension that is less than said wavelength; and

an electrically programmable impedance memory element at each said crosspoint location electrically coupled between the first and second lines corresponding thereto, each impedance memory element having an electrically programmed state;

wherein said composite material modulates said radiation beam according to said electrically programmed states of said impedance memory elements.

2. The apparatus of claim 1, wherein each of said impedance memory elements is selected from the group consisting of:

doped chalcogenide glass-based resistive memory elements;

carbon-polymer film-based resistive memory elements; and

perovskite-based memory elements.

3. The apparatus of claim 1, further comprising:

a memory unit external to said composite material for storing a desired predetermined pattern of states for said impedance memory elements; and

an electrical write circuit coupled to said first lines, said second lines, and said memory unit and configured to transfer said predetermined pattern of states to said impedance memory elements.

4. The apparatus of claim 3, wherein said composite material further comprises a substantially planar substrate providing mechanical support for said first lines, said second lines, and said impedance memory elements, wherein said substrate is at least partially transparent at said wavelength, wherein said first lines and said second lines cross at about 90 degrees in said crossing arrangement, and wherein said composite material modulates said radiation beam as it propagates therethrough.

5. The apparatus of claim 4, wherein each of said impedance memory elements is non-volatile, and wherein said electrical write circuit is configured to enter into a high-impedance disconnect state relative to each of said impedance memory elements subsequent to transferring said predetermined pattern.

6. The apparatus of claim 1, wherein said first lines have a first average spacing of less than one-third said wavelength, wherein said second lines have a second average spacing of less than one-third said wavelength, and wherein said first lines, said second lines, and said impedance memory elements are configured and dimensioned such that said composite material exhibits at least one of a negative effective permittivity and a negative effective permeability at said wavelength for at least one set of programmed states of said impedance memory elements.

7. The apparatus of claim 6, said wavelength being a first wavelength, said radiation beam further having at least one additional wavelength different than said first wavelength, said crossing arrangement of said first lines and said second lines defining a radiation-receiving surface of said composite material, wherein said first line spacings and said second line spacings are spatially varied across said radiation-receiving surface for providing at least one of spatially dependent variation and wavelength dependent variation of said negative effective permittivity and/or negative effective permeability across said radiation-receiving surface.

8. The apparatus of claim 6, said composite material defining a population of notional holographic elements (hogels) at respective non-overlapping areas thereon, each hogel having an area greater than a square of said wavelength, each hogel encompassing plural adjacent first lines, plural adjacent second lines, and plural impedance memory elements, wherein at least one of a phase modulation value and amplitude modulation value associated with each hogel at said wavelength is at least partially variable according to the programmed state of at least one of said plural impedance memory elements therein.

9. The apparatus of claim 8, wherein at least two of said hogels are different with respect to at least one of first line average spacing, second line average spacing, and impedance memory element structure.

10. The apparatus of claim 8, said composite material further defining, within each hogel, a plurality of non-overlapping sub-hogels, each sub-hogel having an area less than the square of said wavelength and encompassing at least one first line, at least one second line, and at least one impedance memory element, wherein said plurality of sub-hogels includes a first sub-hogel configured and dimensioned to promote variations in said phase modulation value for said hogel according to variations in the programmed state of at least one of the impedance memory elements in said first sub-hogel, and wherein said plurality of sub-hogels includes a second sub-hogel configured and dimensioned to promote variations in said amplitude modulation value for said hogel according to variations in the programmed state of at least one of the impedance memory elements in said second sub-hogel.

11. The apparatus of claim 1, wherein said wavelength is an optical wavelength, and wherein the apparatus further comprises a two-dimensional output viewing port for viewing of the modulated radiation beam by a viewer.

12. The apparatus of claim 1, wherein said wavelength is one of an optical wavelength and a microwave wavelength, wherein said apparatus further comprises an output port, and wherein said composite material and said output port are configured and mutually positioned such that (i) for a first programmed state of said impedance memory elements, said composite material directs said radiation beam toward said output port, and (ii) for a second programmed state of said impedance memory elements, said composite material does not direct said radiation beam toward said output port, whereby said apparatus is operable as an electrically controlled optical switch.

13. A method for modulating a radiation beam, comprising:

causing the radiation beam to impinge upon a composite material, wherein said composite material comprises;

a plurality of commonly oriented metallic first lines having a first average spacing less than a wavelength of the radiation beam;

a plurality of commonly oriented metallic second lines having a second average spacing less than said wavelength and positioned in a crossing arrangement with said first lines, a crosspoint location being defined where each said first line crosses each said second line, the crosspoint location having a dimension that is less than said wavelength; and

an electrically programmable impedance memory element at each said crosspoint location electrically coupled between the first and second lines corresponding thereto; and

programming each of said impedance memory elements by applying an electrical programming signal across the first line and second line corresponding to that impedance memory element, thereby placing that impedance memory element in a programmed state;

wherein said radiation beam is modulated by said composite material according to said programmed states of said impedance memory elements.

14. The method of claim 13, wherein each of said impedance memory elements is selected from the group consisting of:

doped chalcogenide glass-based resistive memory elements;

carbon-polymer film-based resistive memory elements; and

perovskite-based memory elements.

15. The method of claim 13, said crossing arrangement of said first lines and said second lines defining a radiation-receiving surface of said composite material, said first lines having a first average spacing of less than one-third said wavelength, said second lines having a second average spacing of less than one-third said wavelength, and wherein said programming further comprises:

setting a first subset of said impedance memory elements associated with a first lateral region of said radiation-receiving surface to a first programmed state that causes said composite material to exhibit at least one of a negative effective permittivity and a negative effective permeability at said wavelength across said first lateral region; and

setting a second subset of said impedance memory elements associated with a second lateral region of said radiation-receiving surface to a second programmed state that causes said composite material to exhibit positive effective permittivity and positive effective permeability at said wavelength across said second lateral region.

16. The method of claim 13, wherein said programming comprises placing each said impedance memory element into a predetermined time sequence of programmed states according to a predetermined time signal stored in a memory device external to said composite material.

17. The method of claim 13, each of said impedance memory elements being a non-volatile resistive memory element, and the method further comprising placing the first and second lines associated with each said resistive memory element into electrically disconnected states subsequent to said programming, said composite material subsequently spatially modulating said radiation beam statically according to said programmed states without requiring external electrical power.

18. An apparatus, comprising:

a source of a radiation beam having a wavelength;

a substrate that is substantially non-attenuating at said wavelength;

a cross-point array formed on said substrate, said cross-point array comprising a layer of substantially parallel metallic row conductors disposed in a crossing pattern with a layer of substantially parallel metallic column conductors, said cross-point array further comprising an electrically programmable impedance memory element at each cross-point between said row and column conductors, each cross-point having a dimension that is less than said wavelength, wherein said row conductors and said column conductors each have average spacings less than said wavelength; and

an electrical programming circuit coupled to said cross-point array for transferring a desired pattern of programmed states to said impedance memory elements;

wherein the radiation beam is modulated according to electrically programmed states of the impedance memory elements while propagating through said cross-point array.

19. The apparatus of claim 18, wherein each of said impedance memory elements is a two-port, non-volatile memory element selected from the group consisting of:

doped chalcogenide glass-based resistive memory elements;

carbon-polymer film-based resistive memory elements; and

perovskite-based memory elements.

20. The apparatus of claim 19, wherein said wavelength is one of an optical wavelength and a microwave wavelength, and wherein said cross-point array is configured and dimensioned to exhibit at least one of a negative effective permittivity and a negative effective permeability at said wavelength for at least one set of programmed states of said impedance memory elements.