Method of making light-emitting diodes (LEDs) with improved light extraction by roughening
First Claim
Patent Images
1. A method comprising:
- providing a light-emitting diode (LED) wafer assembly, comprising;
a conductive substrate;
a p-doped layer disposed above the conductive substrate;
an active layer disposed above the p-doped layer;
an n-doped layer disposed above the active layer;
applying a mask to a surface of the n-doped layer;
etching the surface of the n-doped layer such that etched pits are formed in the surface;
removing the mask; and
roughening or texturing the surface of the n-doped layer including the etched pits, wherein roughening or texturing the surface of the n-doped layer comprises at least one of wet etching, photoenhanced wet etching, dry etching, and applying objects to the surface including the etched pits.
1 Assignment
0 Petitions
Accused Products
Abstract
Methods for fabricating a semiconductor light-emitting diode (LED) device with increased light extraction are provided. The method generally includes applying a mask to a surface of an LED wafer, etching the surface of the LED wafer such that etched pits are formed in the surface, removing the mask, and roughening or texturing the surface of the LED wafer including the etched pits. In this manner, the surface area of the LED device may be increased when compared to a conventional LED device, and less emitted light may experience total internal reflection (TIR) according to Snell'"'"'s law, thereby leading to increased light extraction.
64 Citations
20 Claims
-
1. A method comprising:
-
providing a light-emitting diode (LED) wafer assembly, comprising; a conductive substrate; a p-doped layer disposed above the conductive substrate; an active layer disposed above the p-doped layer; an n-doped layer disposed above the active layer; applying a mask to a surface of the n-doped layer; etching the surface of the n-doped layer such that etched pits are formed in the surface; removing the mask; and roughening or texturing the surface of the n-doped layer including the etched pits, wherein roughening or texturing the surface of the n-doped layer comprises at least one of wet etching, photoenhanced wet etching, dry etching, and applying objects to the surface including the etched pits. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
-
-
18. A method comprising:
-
applying a mask to a surface of a light-emitting diode (LED) wafer; etching the surface of the LED wafer such that etched pits are formed in the surface; removing the mask; and roughening or texturing the surface of the LED wafer including the etched pits, wherein roughening or texturing the surface of the LED wafer comprises at least one of wet etching, photoenhanced wet etching, dry etching, and applying objects to the surface including the etched pits. - View Dependent Claims (19, 20)
-
Specification