Method of fabricating vertical structure LEDs
First Claim
1. A method of producing semiconductor devices, comprising:
- growing a plurality of semiconductor layers over a first support layer;
forming an electrode over the plurality of semiconductor layers;
forming a second support layer over the electrode;
forming trenches which extend through the plurality of semiconductor layers by etching the plurality of semiconductor layers, wherein the trenches define a plurality of individual semiconductor devices;
removing the first support layer; and
forming a passivation layer over at least one exposed surface of the semiconductor layers including a side of the semiconductor layers.
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Accused Products
Abstract
A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.
106 Citations
41 Claims
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1. A method of producing semiconductor devices, comprising:
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growing a plurality of semiconductor layers over a first support layer; forming an electrode over the plurality of semiconductor layers; forming a second support layer over the electrode; forming trenches which extend through the plurality of semiconductor layers by etching the plurality of semiconductor layers, wherein the trenches define a plurality of individual semiconductor devices; removing the first support layer; and forming a passivation layer over at least one exposed surface of the semiconductor layers including a side of the semiconductor layers. - View Dependent Claims (2, 3)
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4. A method of producing a plurality of light emitting diodes, comprising:
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growing a plurality of semiconductor layers over a first support layer; forming a first electrode over one side of the plurality of semiconductor layers; forming a second support layer over the first electrode; forming trenches which extend through the plurality of semiconductor layers, wherein the trenches define a plurality of individual light emitting diodes; removing the first support layer; forming a passivation layer over at least one exposed surface of the plurality of semiconductor layers including a side of the semiconductor layers; and forming a second electrode over a second side of the plurality of semiconductor layers, the second side being opposite said one side, wherein the trenches extend into the second support layer. - View Dependent Claims (5, 6, 7, 8)
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9. A method of producing a plurality of light emitting diodes, comprising:
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forming a first GaN-based layer over a first support layer; forming an active layer over the first GaN-based layer; forming a second GaN-based layer over the active layer; forming trenches which extend through the active layer, the GaN based layers and into the first support layer, wherein the trenches define a plurality of individual light emitting diodes; forming a second support layer over the second GaN-based layer; removing the first support layer; and forming a passivation layer over at least one of exposed portions of the first GaN-based layer, of the active layer, and of the second GaN-based layer. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
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31. A method of producing a plurality of light emitting diodes, comprising:
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forming a first GaN-based layer over a first support layer; forming an active layer over the first GaN-based layer; forming a second GaN-based layer over the active layer; forming a first electrode over the second GaN-based layer; providing a second support layer over the first electrodes; forming trenches by etching through the first GaN-based layer, the active layer, and the second GaN-based layer; removing the first support layer; forming a passivation layer over at least one exposed surface of the first GaN-based layer, the active layer, and the second GaN-based layer; and forming a second electrode over the first GaN-based layer. - View Dependent Claims (32, 33, 34)
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35. A method of producing a plurality of light emitting diodes, comprising:
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forming a first GaN-based layer over a first support layer; forming an active layer over the first GaN-based layer; forming a second GaN-based layer over the active layer; forming a second support layer over the second GaN-based layer; removing the first support layer; removing impurities in the first GaN-based layer; and polishing the exposed portion of the first GaN-based layer using inductively coupled plasma reactive ion etching (ICP RIE). - View Dependent Claims (36)
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37. A method of producing semiconductor devices, comprising:
- growing a plurality of semiconductor layers over a first support layer;
forming an electrode over the plurality of semiconductor layers; providing a second support layer over the plurality of semiconductor layers; forming trenches which extend through the plurality of semiconductor layers by etching the plurality of semiconductor layers, wherein the trenches define a plurality of individual semiconductor devices; removing the first support layer; and forming a passivation layer over at least a portion of bottom surface of the semiconductor layers. - View Dependent Claims (38, 39)
- growing a plurality of semiconductor layers over a first support layer;
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40. A method of producing light emitting diodes, comprising:
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growing a plurality of semiconductor layers over a first support layer; forming trenches which extend through the semiconductor layers and into the first support layer, wherein the trenches define the individual light emitting diodes; forming a second support layer over the plurality of semiconductor layers; removing the first support layer; and forming a passivation layer over at least one exposed surface of the semiconductor layers. - View Dependent Claims (41)
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Specification