Method for manufacturing semiconductor device

• US 7,563,658 B2
• Filed: 12/22/2005
• Issued: 07/21/2009
• Est. Priority Date: 12/27/2004
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Monoe, Shigeharu, Yamazaki, Shunpei, Okamoto, Satoru, Ishizuka, Akihiro
• Primary Examiner(s): LEBENTRITT, MICHAEL
• Application Number:
  US11/314,011
• Publication Number:
  US 20070015307A1
• Time in Patent Office: 1,307 Days
• Field of Search: 257/E21.161, 257/E33.064, 257/E31.126, 257/E21.133, 257/413, 257/414, 257/E27.111, 257/113, 257/E29.151, 257/275, 257/278, 257/282, 257/293, 438/592, 438/629, 438/669, 438/162, 438/166, 438/473, 438/486
• US Class Current: 438/162
• CPC Class Codes: C23F 4/00 Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
• CPC Class Codes: H01L 21/32136 using plasmas
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H10K 50/171 Electron injection layers

Abstract

The present invention relates to a method for manufacturing a semiconductor film, including the steps of forming a transparent conductive film, forming a first conductive film over the transparent conductive film, forming a second conductive film over the first conductive film, etching the second conductive film with a gas including chlorine, and etching the first conductive film with a gas including fluorine. During etching of the second conductive film with a gas including chlorine, the transparent conductive film is protected by the first conductive film. During etching of the first conductive film with the gas including fluorine, the transparent conductive film does not react with the gas including fluorine. Therefore, no particle is formed.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming a transparent conductive film;

forming a first conductive film over the transparent conductive film;

forming a second conductive film over the first conductive film;

forming a mask over the second conductive film;

etching the second conductive film with a gas including chlorine using the mask; and

etching the first conductive film with a gas including fluorine.

2. The method according to claim 1, wherein the transparent conductive film is any one of an indium tin oxide alloy (Indium Tin Oxide (ITO)) film, an indium tin oxide alloy film containing silicon (Si), a zinc oxide (ZnO) film, a tin oxide (SnO₂) film, an indium oxide (InO) film, and an indium oxide-zinc oxide (IZO) alloy film of indium oxide (InO) mixed with 2 to 20 atomic % zinc oxide (ZnO).

3. The method according to claim 1, wherein the first conductive film includes any one of molybdenum (Mo), tungsten (W), tantalum (Ta), chromium (Cr), a nitride thereof, and an alloy thereof.

4. The method according to claim 1, wherein the second conductive film is any one of an aluminum film, an aluminum alloy film including at least one element of nickel (Ni), molybdenum (Mo), silicon (Si), titanium (Ti), neodymium (Nd), and copper (Cu), an aluminum alloy film including at least one element of nickel (Ni), cobalt (Co), molybdenum (Mo), silicon (Si), titanium (Ti), neodymium (Nd), and copper (Cu) and including carbon (C).

5. The method according to claim 1, wherein the gas including chlorine is a gas including any one of Cl₂, BCl₃, SiCl₄, and CCl₄.

6. The method according to claim 1, wherein the gas including fluorine is a gas including any one of CF₄, SF₆, and NF₃.

7. The method according to claim 1, wherein an organic compound layer including a light-emitting layer is formed over the transparent conductive film.

8. A method for manufacturing a semiconductor device, comprising the steps of:

forming a semiconductor film over a substrate with an insulating surface;

forming an insulating film to cover the semiconductor film;

forming a transparent conductive film over the insulating film;

forming a contact hole in the insulating film;

forming a first conductive film over the transparent conductive film and in the contact hole;

forming a second conductive film over the first conductive film;

forming a mask over the second conductive film;

etching the second conductive film with a gas including chlorine using the mask; and

etching the first conductive film with a gas including fluorine,

wherein the transparent conductive film is electrically connected to the semiconductor film.

9. The method according to claim 8, wherein the transparent conductive film is any one of an indium tin oxide alloy (Indium Tin Oxide (ITO)) film, an indium tin oxide alloy film containing silicon (Si), a zinc oxide (ZnO) film, a tin oxide (SnO₂) film, an indium oxide (InO) film, and an indium oxide-zinc oxide (IZO) alloy film of indium oxide (InO) mixed with 2 to 20 atomic % zinc oxide (ZnO).

10. The method according to claim 8, wherein the first conductive film includes any one of molybdenum (Mo), tungsten (W), tantalum (Ta), chromium (Cr), a nitride thereof, and an alloy thereof.

11. The method according to claim 8, wherein the second conductive film is any one of an aluminum film, an aluminum alloy film including at least one element of nickel (Ni), molybdenum (Mo), silicon (Si), titanium (Ti), neodymium (Nd), and copper (Cu), an aluminum alloy film including at least one element of nickel (Ni), cobalt (Co), molybdenum (Mo), silicon (Si), titanium (Ti), neodymium (Nd), and copper (Cu) and including carbon (C).

12. The method according to claim 8, wherein the gas including chlorine is a gas including any one of Cl₂, BCl₃, SiCl₄, and CCl₄.

13. The method according to claim 8, wherein the gas including fluorine is a gas including any one of CF₄, SF₆, and NF₃.

14. A method for manufacturing a semiconductor device, comprising the steps of:

forming a semiconductor film over a substrate with an insulating surface;

forming an insulating film to cover the semiconductor film;

forming a transparent conductive film over the insulating film;

forming a contact hole in the insulating film;

forming a first conductive film over the transparent conductive film and in the contact hole;

forming a second conductive film over the first conductive film;

forming a mask over the second conductive film;

etching the second conductive film with a gas including chlorine using the mask;

etching the first conductive film with a gas including fluorine; and

forming an organic compound layer including a light-emitting layer over the transparent conductive film;

wherein the transparent conductive film is electrically connected to the semiconductor film.

15. The method according to claim 14, wherein the transparent conductive film is any one of an indium tin oxide alloy (Indium Tin Oxide (ITO)) film, an indium tin oxide alloy film containing silicon (Si), a zinc oxide (ZnO) film, a tin oxide (SnO₂) film, an indium oxide (InO) film, and an indium oxide-zinc oxide (IZO) alloy film of indium oxide (InO) mixed with 2 to 20 atomic % zinc oxide (ZnO).

16. The method according to claim 14, wherein the first conductive film includes any one of molybdenum (Mo), tungsten (W), tantalum (Ta), chromium (Cr), a nitride thereof, and an alloy thereof.

17. The method according to claim 14, wherein the second conductive film is any one of an aluminum film, an aluminum alloy film including at least one element of nickel (Ni), molybdenum (Mo), silicon (Si), titanium (Ti), neodymium (Nd), and copper (Cu), an aluminum alloy film including at least one element of nickel (Ni), cobalt (Co), molybdenum (Mo), silicon (Si), titanium (Ti), neodymium (Nd), and copper (Cu) and including carbon (C).

18. The method according to claim 14, wherein the gas including chlorine is a gas including any one of Cl₂, BCl₃, SiCl₄, and CCl₄.

19. The method according to claim 14, wherein the gas including fluorine is a gas including any one of CF₄, SF₆, and NF₃.