Microelectromechanical system pressure sensor and method for making and using
First Claim
1. A method, comprising:
- forming a conducting layer on a first wafer;
forming both an insulating layer on a substantially flat side of a second wafer, and a continuous conducting area disposed on or within only a portion of the second wafer, wherein only the insulating layer comprises a plurality of cavities abutting the second wafer continuous conducting area;
bonding a side of the conducting layer opposite the first wafer to a side of the insulating layer opposite the second wafer; and
removing at least a portion of the first wafer without removing at least a portion of the conducting layer such that the conducting layer forms a plurality of diaphragms that are electrically insulated with respect to one another, each diaphragm corresponding to one of the cavities and substantially parallel to the second wafer, and further such that the continuous conducting area forms a single fixed capacitor plate common to all cavities with corresponding diaphragms.
3 Assignments
0 Petitions
Accused Products
Abstract
According to some embodiments, a conducting layer is formed on a first wafer. An insulating layer is formed on a second wafer. The insulating layer includes a cavity and a conducting area may be formed in the second wafer proximate to the cavity. The side of the conducting layer opposite the first wafer is bonded to the side of the insulating layer opposite the second wafer. At least some of the first wafer is then removed, without removing at least some of the conducting layer, to form a conducting diaphragm that is substantially parallel to the second wafer. In this way, an amount of capacitance between the diaphragm and the conducting area may be measured to determine an amount of pressure being applied to the diaphragm.
23 Citations
10 Claims
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1. A method, comprising:
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forming a conducting layer on a first wafer; forming both an insulating layer on a substantially flat side of a second wafer, and a continuous conducting area disposed on or within only a portion of the second wafer, wherein only the insulating layer comprises a plurality of cavities abutting the second wafer continuous conducting area; bonding a side of the conducting layer opposite the first wafer to a side of the insulating layer opposite the second wafer; and removing at least a portion of the first wafer without removing at least a portion of the conducting layer such that the conducting layer forms a plurality of diaphragms that are electrically insulated with respect to one another, each diaphragm corresponding to one of the cavities and substantially parallel to the second wafer, and further such that the continuous conducting area forms a single fixed capacitor plate common to all cavities with corresponding diaphragms. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification