Method for manufacturing semiconductor device
First Claim
1. A method for manufacturing a semiconductor device including both of a grooved gate transistor and a planar gate transistor on a same semiconductor substrate, the method comprises:
- (a) forming a groove in the semiconductor substrate in the forming region of the grooved gate transistor,(b) filling the groove provided in the semiconductor substrate in the forming region of the grooved gate transistor to form an amorphous silicon layer on the entire surface,(c) ion injecting an impurity of a first conductivity type into the amorphous silicon layer in the forming region of the grooved gate transistor,(d) entirely heating the semiconductor substrate to convert the amorphous silicon layer to a polysilicon layer,(e) amorphousizing a surface layer of the polysilicon layer, and(f) ion injecting an impurity of a second conductivity type into the amorphousized surface layer and the polysilicon layer in the forming region of the planar gate transistor.
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Accused Products
Abstract
Method for manufacturing a semiconductor device including a transistor having a grooved gate structure and a transistor having a planar gate structure on the same substrate, in which, even when the semiconductor device is configured as a dual gate structure in which a gate electrode structure is a poly-metal gate structure, and a grooved gate and a planar gate are made in different conductivity types, then sufficient dopant is injected into polysilicon in the grooved gate to prevent depletion, and impurity ions do not pass through a gate insulating film even when the planar gate is formed also polysilicon having the same film thickness. The method includes: injecting ions into an amorphous silicon layer for the grooved gate; subsequently, turning it into polysilicon once; injecting ions once again to amorphousize a surface layer of the polysilicon layer and injecting ions of a different conductivity type for the planar gate.
3 Citations
11 Claims
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1. A method for manufacturing a semiconductor device including both of a grooved gate transistor and a planar gate transistor on a same semiconductor substrate, the method comprises:
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(a) forming a groove in the semiconductor substrate in the forming region of the grooved gate transistor, (b) filling the groove provided in the semiconductor substrate in the forming region of the grooved gate transistor to form an amorphous silicon layer on the entire surface, (c) ion injecting an impurity of a first conductivity type into the amorphous silicon layer in the forming region of the grooved gate transistor, (d) entirely heating the semiconductor substrate to convert the amorphous silicon layer to a polysilicon layer, (e) amorphousizing a surface layer of the polysilicon layer, and (f) ion injecting an impurity of a second conductivity type into the amorphousized surface layer and the polysilicon layer in the forming region of the planar gate transistor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification