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Methods of modifying interlayer adhesion

  • US 7,563,728 B2
  • Filed: 02/26/2007
  • Issued: 07/21/2009
  • Est. Priority Date: 03/07/2003
  • Status: Expired due to Fees
First Claim
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1. A method for processing a substrate, comprising:

  • depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon;

    depositing a dielectric initiation layer adjacent the barrier layer, wherein the dielectric initiation layer is a silicon oxycarbide layer and is deposited by introducing a first processing gas comprising an organosilicon compound and an oxidizing gas into a processing chamber at a first organosilicon compound flow rate and reacting the first processing gas; and

    depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the first dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less and is deposited by introducing a second processing gas comprising an organosilicon compound and an oxidizing gas into the processing chamber at a second organosilicon compound flow rate and reacting the second processing gas, wherein the second organosilicon compound flow rate is greater than the first organosilicon compound flow rate.

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