Ion beam apparatus having plasma sheath controller

• US 7,564,042 B2
• Filed: 08/06/2007
• Issued: 07/21/2009
• Est. Priority Date: 01/30/2007
• Status: Expired due to Fees

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Shin, Chul-Ho, Lee, Do-Haing, Hwang, Sung-Wook
• Primary Examiner(s): Wells; Nikita
• Application Number:
  US11/834,561
• Publication Number:
  US 20080179546A1
• Time in Patent Office: 715 Days
• Field of Search: 250/396.R, 250/492.2, 250/492, 250/21, 313/360.1, 313/361.1, 313/363.1, 315/111.21, 315/111.31
• US Class Current: 250/396.00R
• CPC Class Codes: H01J 2237/061 Construction
• CPC Class Codes: H01J 2237/24542 Beam profile
• CPC Class Codes: H01J 27/024 Extraction optics, e.g. grids
• CPC Class Codes: H01J 37/08 Ion sources; Ion guns
• CPC Class Codes: H01J 37/3053 for evaporating or etching

Abstract

An ion beam apparatus includes a plasma chamber with a grid assembly installed at one end of the plasma chamber and a plasma sheath controller disposed between the plasma chamber and the grid assembly. The grid assembly includes first ion extraction apertures. The plasma sheath controller includes second ion extraction apertures smaller than the first ion extraction apertures. When the plasma sheath controller is used in this configuration, the surface of the plasma takes on a more planar configuration adjacent the controller so that ions, extracted from the plasma in a perpendicular direction to the plasma surface, pass cleanly through the apertures of the grid assembly rather than collide with the sidewalls of the grid assembly apertures. A semiconductor manufacturing apparatus and method for forming an ion beam are also provided.

Claims

1. An ion beam apparatus comprising:

a plasma chamber;

a grid assembly installed at one end of the plasma chamber, and having first ion extraction apertures; and

a plasma sheath controller disposed between the plasma chamber and the grid assembly, and having second ion extraction apertures smaller than the first ion extraction apertures.

2. The ion beam apparatus according to claim 1, wherein the second ion extraction aperture has a width smaller than a thickness of a plasma sheath of the plasma chamber.

3. The ion beam apparatus according to claim 2, wherein the plasma sheath controller apertures is several times smaller than the thickness of the plasma sheath.

4. The ion beam apparatus according to claim 1, wherein the plasma sheath controller is a conductor.

5. The ion beam apparatus according to claim 1, wherein the plasma sheath controller is a net grid.

6. The ion beam apparatus according to claim 5, wherein the plasma sheath controller is formed of one selected from the group consisting of graphite, metal, and carbon nano tubes.

7. The ion beam apparatus according to claim 1, wherein the plasma sheath controller is a porous material layer.

8. The ion beam apparatus according to claim 7, wherein the plasma sheath controller is formed of one selected from the group consisting of porous metal layer or a porous ceramic layer.

9. The ion beam apparatus according to claim 1, wherein the grid assembly comprises:

a first ion extraction grid; and

a second ion extraction grid,

wherein the first ion extraction grid is interposed between the plasma sheath controller and the second ion extraction grid.

10. The ion beam apparatus according to claim 9, wherein the plasma sheath controller is thinner than the first ion extraction grid.

11. The ion beam apparatus according to claim 9, wherein the first ion extraction grid is applied with a positive voltage, and the second ion extraction grid is applied with a negative voltage or grounded.

12. The ion beam apparatus according to claim 9, wherein the grid assembly further comprises a third ion extraction grid to which a positive voltage is applied, wherein the second ion extraction grid is interposed between the first ion extraction grid and the third ion extraction grid.

13. A semiconductor manufacturing apparatus comprising:

a plasma chamber;

a specimen chamber in communication with the plasma chamber;

a grid assembly disposed between the plasma chamber and the specimen chamber, and having first ion extraction apertures; and

a plasma sheath controller disposed between the plasma chamber and the grid assembly, and having second ion extraction apertures smaller than the first ion extraction apertures.

14. The semiconductor manufacturing apparatus according to claim 13, further comprising:

a gas inlet port disposed at one surface of the plasma chamber; and

an exhaust port disposed in the specimen chamber.

15. The semiconductor manufacturing apparatus according to claim 13, further comprising a wafer stage disposed in the specimen chamber.

16. The semiconductor manufacturing apparatus according to claim 13, wherein the second ion extraction aperture has a width smaller than a thickness of a plasma sheath in the plasma chamber.

17. The semiconductor manufacturing apparatus according to claim 13, wherein the plasma sheath controller is in contact with the grid assembly.

18. The semiconductor manufacturing apparatus according to claim 13, wherein the plasma sheath controller is a net grid or a porous material layer.

19. The semiconductor manufacturing apparatus according to claim 18, wherein the plasma sheath controller is formed of one selected from the group consisting of graphite, metal, and carbon nano tubes.

20. The semiconductor manufacturing apparatus according to claim 13, wherein the grid assembly comprises:

a first ion extraction grid; and

a second ion extraction grid

wherein the first ion extraction grid is interposed between the plasma sheath controller and the second ion extraction grid.

21. The semiconductor manufacturing apparatus according to claim 20, wherein the plasma sheath controller is thinner than the first ion extraction grid.

22. The semiconductor manufacturing apparatus according to claim 20, wherein the first ion extraction grid is applied with a positive voltage, and the second ion extraction grid is applied with a negative voltage or grounded.

23. The semiconductor manufacturing apparatus according to claim 20, wherein the grid assembly further comprises a third ion extraction grid to which a positive voltage is applied, wherein the second ion extraction grid is interposed between the first ion extraction grid and the third ion extraction grid.

24. The semiconductor manufacturing apparatus of claim 23, wherein the voltage applied to the third ion extraction grid is less than the voltage applied to the first ion extraction grid.

25. The semiconductor manufacturing apparatus of claim 13, wherein the second ion extraction apertures of the plasma sheath controller have a width of between about 200 μ

m and 600 μ

m.

26. A method for providing an ion beam from a plasma source, comprising:

positioning a plasma sheath controller adjacent the plasma sheath of a plasma source and in front of a grid assembly so that multiple apertures of the plasma sheath controller are in communication with each aperture of the grid assembly and the resulting plasma sheath is substantially coplanar with a surface of the plasma sheath controller, wherein the width of the plasma sheath controller apertures is smaller than the thickness of the plasma sheath;

applying a voltage to the grid assembly; and

extracting ions through apertures in the plasma sheath controller and then through apertures in the grid assembly to form an ion beam.

27. The method of claim 26, further including:

providing a first extraction grid of the grid assembly and a second extraction grid, aligned with the first; and

applying the voltage to the first extraction grid and a different voltage to the second extraction grid.

28. The method of claim 27, further including:

providing a third extraction grid of the grid assembly so that the second extraction grid is interposed between the first and third extraction grids;

applying a first positive voltage to the first extraction grid; and

applying a second positive voltage to the third extraction grid lower than the first positive voltage.