Semiconductor light emitting device, an integrated semiconductor light emitting apparatus, an image display apparatus, and an illuminating apparatus having a semiconductor layer with conical crystal portion

• US 7,564,064 B2
• Filed: 03/06/2007
• Issued: 07/21/2009
• Est. Priority Date: 09/06/2002
• Status: Expired due to Fees

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Doi, Masato, Suzuki, Jun, Oohata, Toyoharu, Okuyama, Hiroyuki, Biwa, Goshi
• Primary Examiner(s): Le; Thao P.
• Application Number:
  US11/682,770
• Publication Number:
  US 20070147453A1
• Time in Patent Office: 868 Days
• Field of Search: 257/79, 257/94, 257/190, 257/103, 257/82, 257/E21.664, 257/E21.208, 257/E27.104, 257/E29.164, 438/479
• US Class Current: 257/79
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction

Abstract

An n-type GaN layer is grown onto a sapphire substrate and a hexagonal etching mask is formed onto the n-type GaN layer as provided. The n-type GaN layer is etched to a predetermined depth by using the etching mask by the RIE method. A hexagonal prism portion whose upper surface is a C plane is formed. After the etching mask was removed, an active layer and a p-type GaN layer are sequentially grown onto the whole surface of the substrate so as to cover the hexagonal prism portion, thereby forming a light emitting device structure. After that, a p-side electrode is formed onto the p-type GaN layer of the hexagonal prism portion and an n-side electrode is formed onto the n-type GaN layer.

Claims

1. A semiconductor light emitting device comprising:

a semiconductor layer of a first conductivity type in which one principal plane has a circular conical frustum crystal portion having a circular base and a circular upper surface that is substantially parallel with the principal plane and a side surface that is inclined to the principal plane;

at least an active layer and a semiconductor layer of a second conductivity type which are sequentially laminated onto at least the upper surface of the crystal portion;

a first electrode electrically connected to the semiconductor layer of the first conductivity type; and

a second electrode which is formed on the semiconductor layer of the second conductivity type over the upper surface of the crystal portion and electrically connected to the semiconductor layer of the second conductivity type.

2. The semiconductor light emitting device according to claim 1, wherein the crystal portion has a crystal structure of a wurtzite type.

3. The semiconductor light emitting device according to claim 1, wherein the crystal portion includes a nitride III-V group compound semiconductor.

4. The semiconductor light emitting device according to claim 1, wherein each of the semiconductor layer of the first conductivity type, the active layer, and the semiconductor layer of the second conductivity type consists of a nitride III-V group compound semiconductor.

5. The semiconductor light emitting device according to claim 2, wherein the upper surface is a C plane.

6. The semiconductor light emitting device according to claim 1, wherein the crystal portion has a circular cone frustum shape of any one of a forward taper type or an inverse taper type.

7. The semiconductor light emitting device according to claim 1, wherein the second electrode is formed in a portion excluding a peripheral corner portion of an upper surface of the semiconductor layer of the second conductivity type over the upper surface of the crystal portion.

8. An integrated semiconductor light emitting apparatus obtained by integrating a plurality of semiconductor light emitting devices each comprising:

a semiconductor layer of a first conductivity type in which one principal plane has a circular conical frustum crystal portion having a circular base and a circular upper surface that is substantially parallel with the principal plane and a side surface that is inclined to the principal plane;

at least an active layer and a semiconductor layer of a second conductivity type which are sequentially laminated onto at least the upper surface of the crystal portion;

a first electrode electrically connected to the semiconductor layer of the first conductivity type; and

a second electrode which is formed on the semiconductor layer of the second conductivity type over the upper surface of the crystal portion and electrically connected to the semiconductor layer of the second conductivity type.

9. An image display apparatus obtained by integrating a plurality of semiconductor light emitting devices each comprising:

a semiconductor layer of a first conductivity type in which one principal plane has a circular conical frustum crystal portion having a circular base and a circular upper surface that is substantially parallel with the principal place and a side surface that is inclined to the principal plane;

at least an active layer and a semiconductor layer of a second conductivity type which are sequentially laminated onto at least the upper surface of the crystal portion;

a first electrode electrically connected to the semiconductor layer of the first conductivity type; and

a second electrode which is formed on the semiconductor layer of the second conductivity type over the upper surface of the crystal portion and electrically connected to the semiconductor layer of the second conductivity type.

10. An illuminating apparatus obtained by integrating a plurality of semiconductor light emitting devices each comprising:

a semiconductor layer of a first conductivity type in which one principal plane has a circular conical frustum crystal portion having a circular base and a circular upper surface that is substantially parallel with the principal plane and a side surface that is inclined to the principal plane;

at least an active layer and a semiconductor layer of a second conductivity type which are sequentially laminated onto at least the upper surface of the crystal portion;

a first electrode electrically connected to the semiconductor layer of the first conductivity type; and

a second electrode which is formed on the semiconductor layer of the second conductivity type over the upper surface of the crystal portion and electrically connected to the semiconductor layer of the second conductivity type.