Light emitting diode device having a shield and/or filter

• US 7,564,070 B2
• Filed: 11/23/2005
• Issued: 07/21/2009
• Est. Priority Date: 11/23/2005
• Status: Active Grant

• Current Assignee: Visteon Global Technologies Incorporated (Visteon Corporation)
• Original Assignee: Visteon Global Technologies Incorporated (Visteon Corporation)
• Inventors: Tarne, James David, Sayers, Edwin Mitchell
• Primary Examiner(s): Tran; Thien F
• Application Number:
  US11/286,886
• Publication Number:
  US 20070114559A1
• Time in Patent Office: 1,336 Days
• Field of Search: 257/59, 257/72, 257/79, 257/81, 257/88, 257/98, 257/99, 257/100
• US Class Current: 257/98
• CPC Class Codes: F21V 14/003 by interposition of elements with electrically controlled variable light transmissivity, e.g. liquid crystal elements or electrochromic devices
• CPC Class Codes: F21Y 2115/10 Light-emitting diodes [LED]
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A light emitting diode device capable of shielding or filtering the light in a manner to provide high-gradient edges or regions within the beam pattern. The LED device is also capable of providing selective coloring, thereby cost effectively improving the adaptability and number of applications which can utilize the LED device. The LED device includes an optical layer is positioned in front of a LED chip that includes a material having light transmission properties which change in response to electricity being supplied to the optical layer. The optical layer can thus transmit or absorb light from the LED chip, thus shielding or filtering light from the LED chip.

Claims

1. A light emitting diode device comprising:

a housing;

a LED chip mounted to the housing, the LED chip generating light;

a casing connected to the housing and encapsulating the LED chip; and

an optical layer positioned in front of the LED chip and behind the casing, the optical layer including a material having light transmission properties which change in response to electricity being supplied to the optical layer.

2. The light emitting diode device of claim 1, wherein the optical layer absorbs light from the LED chip.

3. The light emitting diode device of claim 1, wherein energization of the optical layer shields light from the LED chip.

4. The light emitting diode device of claim 1, wherein energization of the optical layer filters light from the LED chip.

5. The light emitting diode device of claim 4, wherein the optical layer filters certain wavelengths of light from the LED chip.

6. The light emitting diode device of claim 4, wherein the optical layer determines the color of light delivered by the light emitting diode device.

7. The light emitting diode device of claim 1, wherein energization of the optical layer shields or filters light to create a high gradient along an edge of a beam pattern produced by the light.

8. The light emitting diode device of claim 1, wherein the material comprises liquid crystal.

9. The light emitting diode device of claim 8, wherein the optical layer comprises an active matrix LCD.

10. The light emitting diode device of claim 1, wherein the optical layer covers less than all edges of the LED chip.

11. The light emitting diode device of claim 1, further comprising a conversion layer positioned on the LED chip for converting light from the LED chip to white light.

12. The light emitting diode device of claim 11, wherein the conversion layer includes phosphor.

13. The light emitting diode device of claim 11, wherein the optical layer is positioned on the conversion layer.

14. The light emitting diode device of claim 11, wherein the optical layer is directly connected to one of the LED chip and the conversion layer.

15. The light emitting diode device of claim 1, further comprising a second optical layer positioned in front of the optical layer, the second optical layer including a material having light transmission properties which change in response to electricity being supplied to the second optical layer.

16. The light emitting diode device of claim 15, wherein one of the optical layers filters light from the LED chip and the other optical layer shields light from the LED chip.

17. The light emitting diode device of claim 1, wherein the optical layer is positioned immediately on top of the LED chip.

18. A light emitting diode device comprising:

a housing;

a LED chip mounted to the housing, the LED chip generating light; and

an optical layer positioned in front of the LED chip, the optical layer including a material having light transmission properties which change in response to electricity being supplied to the optical layer, wherein the optical layer covers all edges of the LED chip.