Scalable power field effect transistor with improved heavy body structure and method of manufacture
First Claim
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1. A field effect transistor (FET) comprising:
- a semiconductor region of a first conductivity type;
a well region of a second conductivity type extending over the semiconductor region;
a gate electrode adjacent to but insulated from the well region;
a source region of the first conductivity type in the well region;
a heavy body recess extending into and terminating within the well region adjacent the source region; and
a heavy body material comprising germanium and having a lower energy gap than the well region, the heavy body material at least partially filling the heavy body recess.
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Abstract
A field effect transistor (FET) includes a semiconductor region of a first conductivity type and a well region of a second conductivity type extending over the semiconductor region. A gate electrode is adjacent to but insulated from the well region, and a source region of the first conductivity type is in the well region. A heavy body region is in electrical contact with the well region, and includes a material having a lower energy gap than the well region.
31 Citations
38 Claims
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1. A field effect transistor (FET) comprising:
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a semiconductor region of a first conductivity type; a well region of a second conductivity type extending over the semiconductor region; a gate electrode adjacent to but insulated from the well region; a source region of the first conductivity type in the well region; a heavy body recess extending into and terminating within the well region adjacent the source region; and a heavy body material comprising germanium and having a lower energy gap than the well region, the heavy body material at least partially filling the heavy body recess. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A field effect transistor (FET) comprising:
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a semiconductor region of a first conductivity type; a well region of a second conductivity type extending over the semiconductor region; a gate electrode adjacent to but insulated from the well region; a source region of the first conductivity type in the well region; a heavy body recess extending into and terminating within the well region adjacent the source region; and a heavy body region extending in the well region along a bottom of the heavy body recess, wherein the heavy body region comprises a material that includes germanium and has a lower energy gap than that of the well region. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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29. A field effect transistor (FET) comprising:
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a semiconductor region of a first conductivity type; a well region of a second conductivity type extending over the semiconductor region; a gate electrode adjacent to but insulated from the well region; a source region of the first conductivity type in the well region; a heavy body region in electrical contact with the well region, wherein the heavy body region comprises a material that includes germanium and has a lower energy gap than the well region. - View Dependent Claims (30, 31, 32, 33, 34, 35, 36, 37, 38)
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Specification