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Scalable power field effect transistor with improved heavy body structure and method of manufacture

  • US 7,564,096 B2
  • Filed: 02/09/2007
  • Issued: 07/21/2009
  • Est. Priority Date: 02/09/2007
  • Status: Active Grant
First Claim
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1. A field effect transistor (FET) comprising:

  • a semiconductor region of a first conductivity type;

    a well region of a second conductivity type extending over the semiconductor region;

    a gate electrode adjacent to but insulated from the well region;

    a source region of the first conductivity type in the well region;

    a heavy body recess extending into and terminating within the well region adjacent the source region; and

    a heavy body material comprising germanium and having a lower energy gap than the well region, the heavy body material at least partially filling the heavy body recess.

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