High-frequency switching transistor and high-frequency circuit
First Claim
1. A switching transistor, comprising:
- a substrate having a substrate dopant concentration;
a barrier region bordering on the substrate, comprising a first conductivity type and having a barrier region dopant concentration, which is higher than the substrate dopant concentration;
a source region embedded in the barrier region, comprising a second conductivity type different to the first conductivity type, and having a source region dopant concentration, which is higher than the barrier region dopant concentration;
a drain region embedded in the barrier region and disposed offset from the source region, comprising the second conductivity type and having a dopant concentration, which is higher than the barrier region dopant concentration;
a channel region extending between the source region and the drain region, wherein the channel region comprises a subregion of the barrier region;
an insulation region, which covers the channel region and is disposed between the channel region and a gate electrode;
a further barrier region having the second conductivity type, the further barrier region having a dopant concentration that is higher than the substrate dopant concentration; and
a substrate terminal region embedded in the further barrier region, having the first conductivity type and a substrate terminal region dopant concentration, which is higher than the dopant concentration of the further barrier region.
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Accused Products
Abstract
A high-frequency switching transistor comprises a substrate having a substrate dopant concentration and a barrier region bordering on the substrate, which has a first conductivity type, wherein a barrier region dopant concentration is higher than the substrate dopant concentration. Further, the high-frequency switching transistor comprises a source region embedded in the barrier region, which comprises a second conductivity type different to the first conductivity type, and has a source region dopant concentration, which is higher than the barrier region dopant concentration. Additionally, the high-frequency switching transistor comprises a drain region embedded in the barrier region and disposed offset from the source region, which comprises the second conductivity type and has a drain region dopant concentration, which is higher than the barrier region dopant concentration. Further, the high-frequency switching transistor has a channel region, extending between the source region, wherein the channel region comprises a subregion of the barrier region. Further, the high-frequency switching transistor has an insulation region, which covers the channel region and which is disposed between the channel region and the gate electrode. Such a high-frequency switching transistor allows switching of high-frequency signals with higher high-frequency signal amplitudes as are switchable by conventional high-frequency switching transistors.
59 Citations
35 Claims
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1. A switching transistor, comprising:
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a substrate having a substrate dopant concentration; a barrier region bordering on the substrate, comprising a first conductivity type and having a barrier region dopant concentration, which is higher than the substrate dopant concentration; a source region embedded in the barrier region, comprising a second conductivity type different to the first conductivity type, and having a source region dopant concentration, which is higher than the barrier region dopant concentration; a drain region embedded in the barrier region and disposed offset from the source region, comprising the second conductivity type and having a dopant concentration, which is higher than the barrier region dopant concentration; a channel region extending between the source region and the drain region, wherein the channel region comprises a subregion of the barrier region; an insulation region, which covers the channel region and is disposed between the channel region and a gate electrode; a further barrier region having the second conductivity type, the further barrier region having a dopant concentration that is higher than the substrate dopant concentration; and a substrate terminal region embedded in the further barrier region, having the first conductivity type and a substrate terminal region dopant concentration, which is higher than the dopant concentration of the further barrier region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A circuit, comprising:
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a switch with a high-frequency switching transistor, comprising, a substrate having a substrate dopant concentration, a barrier region bordering on the substrate, comprising a first conductivity type and having a barrier region dopant concentration, which is higher than the substrate dopant concentration, a source region embedded in the barrier region, comprising a second conductivity type different to the first conductivity type, and having a source region dopant concentration, which is higher than the barrier region dopant concentration, a drain region embedded in the barrier region and disposed offset from the source region, comprising the second conductivity type and having a dopant concentration, which is higher than the barrier region dopant concentration, a channel region extending between the source region and the drain region, wherein the channel region comprises a subregion of the barrier region, and an insulation region, which covers the channel region and is disposed between the channel region and a gate electrode; and a control circuit configured to open and close the switch depending on a control signal, and operably coupled to provide the gate electrode with a potential for opening the switch, the control circuit further operable to enable a current flow between the source region and the drain region; wherein the control circuit is formed to apply an offset voltage between the source region and the drain region relative to the substrate when opening the switch. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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20. A circuit comprising:
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a high-frequency switching transistor, comprising; a substrate having a substrate dopant concentration; a barrier region bordering on the substrate, comprising a first conductivity type and having a barrier region dopant concentration, which is higher than the substrate dopant concentration; a source region embedded in the barrier region, comprising a second conductivity type different to the first conductivity type, and having a source region dopant concentration, which is higher than the barrier region dopant concentration; a drain region embedded in the barrier region and disposed offset from the source region, comprising the second conductivity type and having a dopant concentration, which is higher than the barrier region dopant concentration; a channel region extending between the source region and the drain region, wherein the channel region comprises a subregion of the barrier region; and an insulation region, which covers the channel region and is disposed between the channel region and a gate electrode; and a partial circuit, wherein the partial circuit is formed to provide the substrate of the high-frequency transistor with an offset voltage in relation to the source region and the drain region. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
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32. A switching transistor, comprising:
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a substrate having a substrate dopant concentration; a barrier region bordering on the substrate, comprising a first conductivity type and having a barrier region dopant concentration, which is higher than the substrate dopant concentration; a source region embedded in the barrier region, comprising a second conductivity type different to the first conductivity type, and having a source region dopant concentration, which is higher than the barrier region dopant concentration; a drain region embedded in the barrier region and disposed offset from the source region, comprising the second conductivity type and having a dopant concentration, which is higher than the barrier region dopant concentration; a channel region extending between the source region and the drain region, wherein the channel region comprises a subregion of the barrier region; and an insulation region, which covers the channel region and is disposed between the channel region and a gate electrode; wherein the channel region comprises a plurality of subchannel regions, which are disposed in series between the source region and the drain region, and wherein the insulation region comprises a plurality of subregions, and the gate electrode comprises a plurality of subgate electrodes, wherein one subinsulation region covers one subchannel region, and every subinsulation region is disposed between the corresponding subchannel region and a subgate electrode. - View Dependent Claims (33, 34)
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35. A circuit, comprising:
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a switch with a high-frequency switching transistor, comprising, a substrate having a substrate dopant concentration; a barrier region bordering on the substrate, comprising a first conductivity type and having a barrier region dopant concentration, which is higher than the substrate dopant concentration; a source region embedded in the barrier region, comprising a second conductivity type different to the first conductivity type, and having a source region dopant concentration, which is higher than the barrier region dopant concentration; a drain region embedded in the barrier region and disposed offset from the source region, comprising the second conductivity type and having a dopant concentration, which is higher than the barrier region dopant concentration; a channel region extending between the source region and the drain region, wherein the channel region comprises a subregion of the barrier region; and an insulation region, which covers the channel region and is disposed between the channel region and a gate electrode; a substrate terminal region embedded in a further barrier region, and wherein the control circuit is further configured to provide the substrate terminal region with a potential by using a resistor connected in series to the substrate terminal region; and a control circuit configured to open and close the switch depending on a control signal, and operably coupled to provide the gate electrode with a potential for opening the switch, the control circuit further operable to enable a current flow between the source region and a drain region.
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Specification