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Internal voltage generation circuit for semiconductor device

  • US 7,564,732 B2
  • Filed: 12/27/2006
  • Issued: 07/21/2009
  • Est. Priority Date: 05/10/2006
  • Status: Active Grant
First Claim
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1. An internal voltage generation circuit for use in a semiconductor device, comprising:

  • a standby internal voltage generator which is to be driven during a standby operation and an active operation, and supplies a voltage to an internal voltage end;

    a first active internal voltage generator for supplying a voltage to the internal voltage end in response to an active signal being activated during the active operation; and

    a second active internal voltage generator which is to be driven only for a predetermined time period in response to the active signal, and supplies a voltage to the internal voltage end,wherein the second active internal voltage generator includes;

    an active signal sensing circuit for sensing the active signal; and

    an internal voltage generator for generating a voltage in response to an output signal of the active signal sensing circuit,wherein the active signal sensing circuit is provided with a pulse generator for generating a pulse signal which becomes active only for the predetermined time period after receiving the active signal,wherein the pulse generator includes;

    a delay circuit for taking and delaying the active signal; and

    an output circuit for receiving the active signal and an output signal of the delay circuit to provide the pulse signal.

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