Securities, chip mounting product, and manufacturing method thereof
First Claim
Patent Images
1. A chip comprising:
- an integrated circuit including;
a memory cell including a semiconductor film with a thickness of 0.2 μ
m or less;
a first wiring over the semiconductor film; and
a second wiring over the semiconductor film,wherein the semiconductor film is connected to one of the first wiring and the second wiring by disconnecting the other of the first wiring and the second wiring with laser cutting to input data to the memory cell.
1 Assignment
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Accused Products
Abstract
The invention provides an ID chip with reduced cost, increased impact resistance and attractive design, as well as products and the like mounting the ID chip and a manufacturing method thereof. In view of the foregoing, an integrated circuit having a semiconductor film with a thickness of 0.2 μm or less is mounted on securities including bills, belongings, containers of food and drink, and the like (hereinafter referred to as products and the like). The ID chip of the invention can be reduced in cost and increased in impact resistance as compared with a chip formed over a silicon wafer while maintaining an attractive design.
93 Citations
22 Claims
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1. A chip comprising:
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an integrated circuit including; a memory cell including a semiconductor film with a thickness of 0.2 μ
m or less;a first wiring over the semiconductor film; and a second wiring over the semiconductor film, wherein the semiconductor film is connected to one of the first wiring and the second wiring by disconnecting the other of the first wiring and the second wiring with laser cutting to input data to the memory cell. - View Dependent Claims (2, 3)
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4. A chip comprising:
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an integrated circuit including; a non-volatile and non-rewritable memory cell including a semiconductor film with a thickness of 0.2 μ
m or less;a first wiring over the semiconductor film; and a second wiring over the semiconductor film, wherein the semiconductor film is connected to one of the first wiring and the second wiring by disconnecting the other of the first wiring and the second wiring with laser cutting to input data to the non-volatile and non-rewritable memory cell, and wherein the integrated circuit comprises the non-volatile and non-rewritable memory cell that stores the data based on variations in characteristics of the semiconductor film. - View Dependent Claims (5, 6, 7)
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8. A chip mounting product comprising:
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an integrated circuit including; a memory cell including a semiconductor film with a thickness of 0.2 μ
m or less;a first wiring over the semiconductor film; and a second wiring over the semiconductor film, wherein the semiconductor film is connected to one of the first wiring and the second wiring by disconnecting the other of the first wiring and the second wiring with laser cutting to input data to the memory cell. - View Dependent Claims (9, 10)
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11. A chip mounting product comprising:
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an integrated circuit including; a non-volatile and non-rewritable memory cell including a semiconductor film with a thickness of 0.2 μ
m or less;a first wiring over the semiconductor film; and a second wiring over the semiconductor film, wherein the semiconductor film is connected to one of the first wiring and the second wiring by disconnecting the other of the first wiring and the second wiring with laser cutting to input data to the non-volatile and non-rewritable memory cell, and wherein the integrated circuit comprises the non-volatile and non-rewritable memory cell that stores the data based on variations in characteristics of the semiconductor film. - View Dependent Claims (12, 13, 14)
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15. A manufacturing method of a chip, comprising:
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forming a semiconductor film with a thickness of 0.2 μ
m or less;crystallizing the semiconductor film to form a crystalline semiconductor film; forming a first wiring over the crystalline semiconductor film by photolithography; forming a second wiring and a third wiring over the crystalline semiconductor film; forming an integrated circuit by forming a first memory cell and a second memory cell, wherein the first memory cell includes the first wiring and a first part of the crystalline semiconductor film, and wherein the second memory cell includes the second wiring, the third wiring and a second part of the crystalline semiconductor film; and cutting one of the second wiring and the third wiring with laser to input data to the second memory cell, wherein the first memory cell is selected by a circuit connection obtained by the first wiring. - View Dependent Claims (16, 17, 18)
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19. A manufacturing method of a chip mounting product, comprising:
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forming a semiconductor film with a thickness of 0.2 μ
m or less;crystallizing the semiconductor film to form a crystalline semiconductor film; forming a first wiring over the crystalline semiconductor film by photolithography; forming a second wiring and a third wiring over the crystalline semiconductor film; forming an integrated circuit by forming a first memory cell having a circuit connection obtained by the first wiring and by forming a second memory cell having a circuit connection by the second wiring and the third wiring formed over the crystalline semiconductor film by droplet ejection; and cutting one of the second wiring and the third wiring with laser to input data to the second memory cell. - View Dependent Claims (20, 21, 22)
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Specification