Method of fabricating semiconductor devices with a multi-role facilitation layer

• US 7,566,579 B2
• Filed: 11/04/2005
• Issued: 07/28/2009
• Est. Priority Date: 11/11/2004
• Status: Expired due to Fees

• Current Assignee: University of Strathclyde
• Original Assignee: University of Strathclyde
• Inventors: Dawson, Martin, Edwards, Paul Roger, Watson, Ian Michael, Martin, Robert William, Gu, Erdan
• Primary Examiner(s): LE, DUNG ANH
• Application Number:
  US11/719,125
• Publication Number:
  US 20080067532A1
• Time in Patent Office: 1,362 Days
• Field of Search: 438 22- 24, 438 46- 47, 438 48- 56, 438602-604, 257 79- 86, 257/94
• US Class Current: 438/46
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01S 2304/04 MOCVD or MOVPE
• CPC Class Codes: H01S 5/0207 Substrates having a special shape
• CPC Class Codes: H01S 5/041 Optical pumping
• CPC Class Codes: H01S 5/18341 Intra-cavity contacts
• CPC Class Codes: H01S 5/18358 containing spacer layers to adjust the phase of the light wave in the cavity
• CPC Class Codes: H01S 5/18369 based on dielectric materials
• CPC Class Codes: H01S 5/18383 with periodic active regions at nodes or maxima of light intensity
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

A method of growing semiconductor materials in the Indium, Aluminium, Gallium Nitride (InAlGaN) material system and to devices made therefrom, in particular optical devices in the ultraviolet to green region of the visible spectrum. Certain optical devices, for example Vertical Cavity Surface Emitting Lasers (VCSELs) require great precision in the thickness of certain semiconductor layers. One aspect of the present invention provides a gallium-rich group III nitride layer (200, 201) and an adjacent layer of Al_xIn_yGa_1-x-yN layer (202). The Al_xIn_yGa_1-x-yN layer (202) acts as a fabrication facilitation layer and is selected to provide a good lattice match and high refractive index contrast with the gallium-rich group III nitride layer (200, 201). The high refractive index contrast permits in-situ optical monitoring. The extra layer (202) can be used as an etch marker or etch stop layer in subsequent processing and may be used in a lift-off process.

Claims

1. A method of fabricating a semiconductor layer in the InAlGaN material system on a gallium-rich group III nitride layer, the method comprising:

growing a Al_xIn_yGa_1-x-yN fabrication facilitation layer on a first surface of the gallium-rich group III nitride layer,

growing at least one further layer in the InAlGaN material system above the fabrication facilitation layer while growth rate information is determined optically,

wherein x and y are so as to provide lattice match with the gallium rich group III nitride layer such that the in plane strain is less than +/−

1% and wherein the Al_xIn_yGa_1-x-yN layer is so as to provide a detectable refractive index contrast with the at least one further layer in the AlInGaN material system or the first gallium-rich group III nitride layer.

2. A method as claimed in claim 1, wherein the at least one further layer is grown on the Al_xIn_yGa_1-x-yN layer.

3. A method as claimed in claim 1, wherein the values of x and y in the Al_xIn_yGa_1-x-yN layer are also so as to provide at least a second lattice-match with the at least one further layer in the AlInGaN system such that the in plane strain is less than +/−

1%.

4. A method as claimed in claim 1, wherein the value of x is substantially 5y.

5. A method as claimed in claim 4, wherein x+y=1 and y=0.17 +/−

0.02.

6. A method as claimed in claim 1 further comprising growth of a subsequent layer in response to the growth rate information.

7. A method as claimed in claim 6, wherein the subsequent layer is grown in a different growth regime from the at least one further layer.

8. A method as claimed in claim 7, wherein a prior calibration run is performed to determine the relationship between the two growth regimes.

9. A method as claimed in claim 1 wherein at least the growth of the at least one further layer is controlled by closed loop control.

10. A method as claimed in claim 1, wherein growth rate information is determined optically during the growth of the fabrication facilitation layer.

11. A method as claimed in claim 1, wherein the fabrication facilitation layer has an optical thickness of substantially an odd integer multiple of □

/4, where □

is the wavelength of the light used for the optical monitoring.

12. A method as claimed in claim 1, further comprising etching one of the gallium rich group III nitride layer and the further layer in the AlInGaN material system using the fabrication facilitation layer as an etch stop layer.

13. A method as claimed in claim 1, further comprising etching one of the gallium rich group III nitride layer and the further layer in the AlInGaN material system using the fabrication facilitation layer as an etch marker layer.

14. A method as claimed in claim 12, wherein the etching step is a dry etching step.

15. A method as claimed in claim 14, further comprising a wet etching step.

16. A method as claimed in claim 12, wherein the etching step is a wet etching step and the method further comprises a machining step conducted before the etching step.

17. A method as claimed in claim 12, wherein the termination of the etching step is detected by the presence of ions liberated from the fabrication facilitation layer.

18. A method as claimed in claim 1, wherein the optically-derived growth rate information is used to control the growth rate of a still further layer on a different wafer.

19. A method of selectively etching a first gallium rich group III nitride layer from a second gallium rich group III nitride layer, the method comprising

growing a Al_xIn_yGa_1-x-yN fabrication facilitation layer on a first surface of the first gallium-rich group III nitride layer,

growing the second gallium rich group III nitride layer on the fabrication facilitation layer,

etching one of the first gallium rich group III nitride layer and the second gallium rich group III nitride layer and terminating the etching process at the fabrication facilitation layer wherein x and y are so as to provide lattice match with at least one of the gallium rich group III nitride layers such that the in plane strain is less than +/−

1%.

20. A method as claimed in claim 19, wherein the etching is terminated in response to detection of chemical species liberated from the fabrication facilitation layer.

21. A method as claimed in claim 19, wherein the etching is terminated due to differential etch rates between the fabrication facilitation layer and the one of the first and second gallium rich group III nitride layers.

22. A method as claimed in claim 19, further comprising etching away the fabrication facilitation layer.

23. A method as claimed in claim 19, wherein the etching step is a dry etching step.

24. A method of etching a first gallium-rich group III nitride layer from a further gallium-rich group III nitride layer, the method comprising:

growing a Al_xIn_yGa_1-x-yN layer fabrication facilitation layer on a first surface of the first gallium-rich group III nitride layer,

growing at least one further gallium rich group III nitride layer on the fabrication facilitation layer,

penetrating one of the first gallium rich group III nitride layer and the further gallium rich group III nitride layer as far as the fabrication facilitation layer and etching the fabrication facilitation layer,

wherein x and y are so as to provide lattice match with at least one of the gallium rich group III nitride layers such that the in plane strain is less than +/−

1%.

25. A method as claimed in claim 24, wherein the etching is performed using an alkaline wet etch.

26. A method as claimed in claim 25, wherein the etch comprises a high-temperature solvent-free melt.

27. A method as claimed in claim 24, wherein the penetrating step includes mechanical machining and/or an ablation technique, so as laser machining.

28. A method as claimed in claim 27, wherein the penetrating step further comprises a dry etch step with end point detection.