In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization

• US 7,569,119 B2
• Filed: 02/21/2006
• Issued: 08/04/2009
• Est. Priority Date: 12/28/1992
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Tang, Wallace T. Y.
• Primary Examiner(s): MACARTHUR, SYLVIA
• Application Number:
  US11/359,219
• Publication Number:
  US 20060151111A1
• Time in Patent Office: 1,260 Days
• Field of Search: 156/345.16, 156/345.12, 156/345.13, 156/345.25
• US Class Current: 156/345.16
• CPC Class Codes: B24B 37/013 Devices or means for detecting lapping completion
• CPC Class Codes: B24B 37/205 provided with a window for inspecting the surface of the work being lapped
• CPC Class Codes: B24B 49/12 involving optical means
• CPC Class Codes: G01B 11/0683 measurement during deposition or removal of the layer
• CPC Class Codes: H01L 21/31053 involving a dielectric removal step
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32

Abstract

A technique and apparatus is disclosed for the optical monitoring and measurement of a thin film (or small region on a surface) undergoing thickness and other changes while it is rotating. An optical signal is routed from the monitored area through the axis of rotation and decoupled from the monitored rotating area. The signal can then be analyzed to determine an endpoint to the planarization process. The invention utilizes interferometric and spectrophotometric optical measurement techniques for the in situ, real-time endpoint control of chemical-mechanical polishing planarization in the fabrication of semiconductor or various optical devices. The apparatus utilizes a bifurcated fiber optic cable to monitor changes on the surface of the thin film.

Claims

1. A chemical mechanical polisher for planarizing a film on one side of a substrate having two sides, the polisher comprising:

a rotatable platen configured to receive a polishing pad;

a light source;

a first optical fiber to transmit light from the light source and direct the light through the platen toward the substrate from the side of the substrate with the film to illuminate at least one section on the film;

a second optical fiber to receive light reflected off the illuminated section of the film and direct the light through the platen;

a photodetector to receive the reflected light from the second optical fiber; and

a computer system coupled to the photodetector and operable to monitor a dimensional change of the film based on the reflected light from the film on the substrate.

2. The polisher of claim 1, wherein the first optical fiber comprises a first leg of a bifurcated optical fiber and the second optical fiber comprises a second leg of a bifurcated optical fiber.

3. The polisher of claim 2, wherein a common leg of the bifurcated optical fiber is positioned to direct light to the substrate and to receive reflected light from the substrate.

4. The polisher of claim 1, wherein the light source and the photodetector are positioned outside the platen.

5. The polisher of claim 4, wherein the light source and the photodetector are stationary.

6. The polisher of claim 5, comprising an analyzer including the photodetector.

7. The polisher of claim 6, wherein the analyzer comprises an interferometer.

8. The polisher of claim 6, wherein the analyzer comprises a spectrophotometer.

9. The polisher of claim 1, comprising an analyzer including the photodetector.

10. The polisher of claim 9, wherein the analyzer comprises an interferometer.

11. The polisher of claim 9, wherein the analyzer comprises a spectrophotometer.

12. The polisher of claim 1, wherein the light source is a laser.

13. The polisher of claim 12, wherein the light source has a wavelength of 632.8 nanometers.

14. The polisher of claim 1, wherein the light source has a wavelength between about 200 and about 11,000 nanometers.

15. The polisher of claim 1, further comprising the polishing pad, the polishing pad having a perforation through which the light and the reflected light pass.

16. The polisher of claim 1, further comprising a rotating coupler to connect movable portions of the first and second optical fibers in the platen to stationary portions of the first and second optical fibers.

17. The polisher of claim 1, further comprising lenses fitted on ends of the first and second optical fibers.