Method for separating a useful layer and component obtained by said method
First Claim
1. Method for separating a useful layer, initially attached by a sacrificial layer to a layer forming a substrate, the method comprising the following steps in order:
- depositing of a mask on at least a predetermined part of the useful layer;
doping through the mask of at least a part of the surface of at least one of the layers in contact with the sacrificial layer, so as to delineate at least one doped zone and at least one non-doped zone of said part of the surface;
at least partial etching of the sacrificial layer; and
superficial etching of said part of the surface so as to increase the roughness of the doped zone of said part of the surface,one of said zones forming a stop after the superficial etching.
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Accused Products
Abstract
A useful layer (1) is initially attached by a sacrificial layer (2) to a layer (3) forming a substrate. Before etching of the sacrificial layer (2), at least a part of the surface (4, 5) of at least one of the layers in contact with the sacrificial layer (2) is doped. After etching of the sacrificial layer (2), the surface (4, 5) is superficially etched so as to increase the roughness of its doped part. After doping, a mask (9) is deposited on a part of the useful layer (1) so as to delineate a doped zone and a non-doped zone of the surface (4, 5), one of the zones forming a stop after the superficial etching phase.
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Citations
12 Claims
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1. Method for separating a useful layer, initially attached by a sacrificial layer to a layer forming a substrate, the method comprising the following steps in order:
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depositing of a mask on at least a predetermined part of the useful layer; doping through the mask of at least a part of the surface of at least one of the layers in contact with the sacrificial layer, so as to delineate at least one doped zone and at least one non-doped zone of said part of the surface; at least partial etching of the sacrificial layer; and superficial etching of said part of the surface so as to increase the roughness of the doped zone of said part of the surface, one of said zones forming a stop after the superficial etching. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. Method for separating a useful layer, initially attached by a sacrificial layer to a layer forming a substrate, the method comprising the following steps in order:
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doping of at least a part of the surface of at least one of the layers in contact with the sacrificial layer; at least partial etching of the sacrificial layer so as to leave at least one spacer block between the layer forming the substrate and the useful layer, superficial etching of said surface so as to increase the roughness of the doped part of the surface, wherein the superficial etching of said surface uses the spacer block as mask, so as to form at least one stop in said surface; removal of said spacer block; and an additional superficial etching of said surface so as to increase the roughness of the surface of the stop. - View Dependent Claims (12)
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Specification