Apparatus and method for controlled combustion of gaseous pollutants
First Claim
1. An apparatus for use during the abatement of a semiconductor manufacturing process comprising:
- an upper reaction chamber having;
an interior porous wall that defines a central chamber;
an outer wall that surrounds the interior porous wall and that defines an interior space between the outer wall and the interior porous wall;
at least one waste gas inlet in fluid communication with the central chamber and adapted to introduce a gaseous waste stream to the central chamber;
at least one fuel inlet adapted to introduce a fuel into the central chamber, where the fuel inlet is positioned to introduce fuel through a path that does not pass through pores of the porous wall;
at least one oxidant inlet adapted to introduce an oxidant into the central chamber, where the oxidant inlet is positioned to introduce oxidant through a path that does not pass through pores of the porous wall;
a thermal mechanism positioned within the central chamber and adapted to form reaction products from the gaseous waste stream within the central chamber;
a fluid delivery system adapted to provide a fluid to the central chamber through the interior porous wall at a sufficient force to reduce deposition of reaction products on an inner surface of the interior porous wall of the central chamber; and
a lower reaction chamber coupled to the upper reaction chamber and having;
a gas flow chamber in fluid communication with the central chamber, the gas flow chamber having an inlet and outlet for passing the gaseous waste stream and reaction products through the gas flow chamber;
a water delivery system adapted to generate a flowing liquid film on an interior surface of the gas flow chamber so as to reduce deposition and accumulation of particulate solids on the interior surface of the gas flow chamber; and
at least one inlet adapted to introduce an oxidant to the gaseous waste stream.
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Accused Products
Abstract
The present invention relates to systems and methods for controlled combustion of gaseous pollutants while reducing and removing deposition of unwanted reaction products from within the treatment systems. The systems employ a two-stage thermal reactor having an upper thermal reactor including at least one inlet for mixing a gaseous waste stream with oxidants and combustible fuels for thermal combustion within the upper thermal reactor. The upper thermal reactor further includes a double wall structure having an outer exterior wall and an interior porous wall that defines an interior space for holding a fluid and ejecting same, in a pulsating mode, through the interior porous wall into the upper thermal reactor to reduce deposition of the reaction products on the interior of the upper reactor chamber. The two-stage thermal reactor further includes a lower reactor chamber for flowing reaction products formed in the upper thermal reactor through a water vortex that provides a water overflow along the interior of the lower reactor chamber thereby reducing deposition of unwanted products on the interior surface of the lower reactor.
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Citations
30 Claims
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1. An apparatus for use during the abatement of a semiconductor manufacturing process comprising:
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an upper reaction chamber having; an interior porous wall that defines a central chamber; an outer wall that surrounds the interior porous wall and that defines an interior space between the outer wall and the interior porous wall; at least one waste gas inlet in fluid communication with the central chamber and adapted to introduce a gaseous waste stream to the central chamber; at least one fuel inlet adapted to introduce a fuel into the central chamber, where the fuel inlet is positioned to introduce fuel through a path that does not pass through pores of the porous wall; at least one oxidant inlet adapted to introduce an oxidant into the central chamber, where the oxidant inlet is positioned to introduce oxidant through a path that does not pass through pores of the porous wall; a thermal mechanism positioned within the central chamber and adapted to form reaction products from the gaseous waste stream within the central chamber; a fluid delivery system adapted to provide a fluid to the central chamber through the interior porous wall at a sufficient force to reduce deposition of reaction products on an inner surface of the interior porous wall of the central chamber; and a lower reaction chamber coupled to the upper reaction chamber and having; a gas flow chamber in fluid communication with the central chamber, the gas flow chamber having an inlet and outlet for passing the gaseous waste stream and reaction products through the gas flow chamber; a water delivery system adapted to generate a flowing liquid film on an interior surface of the gas flow chamber so as to reduce deposition and accumulation of particulate solids on the interior surface of the gas flow chamber; and at least one inlet adapted to introduce an oxidant to the gaseous waste stream. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. An abatement system for treating gaseous pollutants in a gaseous waste stream, the system comprising:
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an upper thermal reaction chamber comprising; an outer exterior wall; an interior porous wall, wherein the interior porous wall defines a central chamber and wherein the interior porous wall is positioned from the outer exterior wall a sufficient distance to define an interior annular space; means for introducing a fluid to the interior annular space; thermal means for forming reaction products from the gaseous waste stream; at least one waste gas inlet for conducting the gaseous waste stream into the upper thermal reactor; at least one fuel inlet adapted to introduce a fuel into the central chamber, where the fuel inlet is positioned to introduce fuel through a path that does not pass through pores of the porous wall; and at least one oxidant inlet adapted to introduce an oxidant into the central chamber, where the oxidant inlet is positioned to introduce oxidant through a path that does not pass through pores of the porous wall; and a lower reaction chamber comprising; a gas flow chamber in fluid communication with the central chamber; and least one oxidant inlet positioned to introduce an oxidant to the gas stream flow chamber; wherein the lower reaction chamber includes a liquid vortex positioned between the central chamber and the gas flow chamber, wherein the liquid vortex comprises; an outer shell having a top plate, a central opening in fluid communication with the central chamber; a conical-shaped baffle within the outer shell having an inner surface and a central opening which is generally aligned with the interior surface of the gas stream flow chamber, the conical-shaped baffle generally concentrically aligned with the inner surface of the outer shell to form a concentric chamber; and a liquid inlet arranged to tangentially introduce liquid into the concentric chamber, thereby filling the concentric chamber with liquid to create a swirling motion, causing the liquid to rise and overflow the conical-shaped baffle into the gas stream flow chamber to form a sheet of fluid on the inner surface of the conical-shaped baffle that flows downwardly onto the interior surface of the gas stream flow chamber. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30)
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Specification