Gate critical dimension variation by use of ghost features
First Claim
1. A computer readable medium containing program code that configures a processor to perform a method of making masks for forming an array of features on a semiconductor device, comprising:
- program code for forming a first mask feature on a first mask to provide a first feature in the array of features on the semiconductor device and a second mask feature on the first mask adjacent to, and spaced from, the first mask feature to provide a second feature adjacent to, and spaced from, the first feature in the array of features on the semiconductor device; and
program code for forming a second mask to be used in conjunction with the first mask, the second mask comprising,a first region that blocks radiation and that corresponds to the first mask feature and the first feature in the array of features on the semiconductor device, anda second region that permits radiation to impinge on an entirety of the second feature in the array of features on the semiconductor device.
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Accused Products
Abstract
According to various embodiments, the present teachings include various methods for forming a semiconductor device, computer readable medium for forming a semiconductor device, mask sets for forming a semiconductor device, and a semiconductor device made according to various methods. For example, a method can comprise forming a first feature and a second feature on a substrate by exposing a first mask to a first beam, wherein the second feature is disposed adjacent to the first feature, exposing a second mask to a second beam, and removing the second feature from the substrate.
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Citations
6 Claims
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1. A computer readable medium containing program code that configures a processor to perform a method of making masks for forming an array of features on a semiconductor device, comprising:
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program code for forming a first mask feature on a first mask to provide a first feature in the array of features on the semiconductor device and a second mask feature on the first mask adjacent to, and spaced from, the first mask feature to provide a second feature adjacent to, and spaced from, the first feature in the array of features on the semiconductor device; and program code for forming a second mask to be used in conjunction with the first mask, the second mask comprising, a first region that blocks radiation and that corresponds to the first mask feature and the first feature in the array of features on the semiconductor device, and a second region that permits radiation to impinge on an entirety of the second feature in the array of features on the semiconductor device. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification