Light emitting device having light emitting elements
First Claim
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1. A light emitting device, comprising:
- a single insulating substrate comprising a first upper area, a second middle area, and a third lower area, each of the first upper area and the third lower area extending along a first direction, the second middle area being disposed between the first upper area and the third lower area in a second direction different from the first direction;
at least a first array of GaN-based light emitting elements connected in series and disposed on the single insulating substrate in the first upper area, the second middle area, and the third lower area, the first array to sequentially illuminate the first upper area in the first direction, the second middle area in the second direction, and the third lower area in the first direction; and
a second array of GaN-based light emitting elements connected in series and disposed on the single insulating substrate in the first upper area, the second middle area, and the third lower area, the second array to sequentially illuminate the third lower area in the second direction, the second middle area in the first direction, and the first upper area in the second direction.
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Abstract
A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.
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Citations
10 Claims
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1. A light emitting device, comprising:
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a single insulating substrate comprising a first upper area, a second middle area, and a third lower area, each of the first upper area and the third lower area extending along a first direction, the second middle area being disposed between the first upper area and the third lower area in a second direction different from the first direction; at least a first array of GaN-based light emitting elements connected in series and disposed on the single insulating substrate in the first upper area, the second middle area, and the third lower area, the first array to sequentially illuminate the first upper area in the first direction, the second middle area in the second direction, and the third lower area in the first direction; and a second array of GaN-based light emitting elements connected in series and disposed on the single insulating substrate in the first upper area, the second middle area, and the third lower area, the second array to sequentially illuminate the third lower area in the second direction, the second middle area in the first direction, and the first upper area in the second direction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification
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Current AssigneeSeoul Semiconductor Co., Ltd.
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Original AssigneeSeoul Semiconductor Co., Ltd.
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InventorsAo, Jin-Ping, Ono, Yasuo, Sakai, Shiro
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Primary Examiner(s)MALSAWMA, LALRINFAMKIM HMAR
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Application NumberUS12/352,271Publication NumberTime in Patent Office204 DaysField of Search257 88- 93, 257/E25.028, 257/E25.032, 257/E27.051, 257/E51.022US Class Current257/88CPC Class CodesH01L 2224/24 of an individual high densi...H01L 27/15 including semiconductor com...H01L 27/153 in a repetitive configurati...H01L 27/156 two-dimensional arraysH01L 33/08 with a plurality of light e...H01L 33/32 containing nitrogenH01L 33/38 with a particular shapeH01L 33/42 Transparent materialsH01L 33/62 Arrangements for conducting...
