Monolithic microwave integrated circuit (MMIC) waveguide resonators having a tunable ferroelectric layer

• US 7,570,137 B2
• Filed: 11/14/2005
• Issued: 08/04/2009
• Est. Priority Date: 11/14/2005
• Status: Active Grant

• Current Assignee: Northrop Grumman Systems Corporation (Northrop Grumman Corporation)
• Original Assignee: Northrop Grumman Corporation
• Inventors: Wong, Thomas T. Y., Kintis, Mark, Lan, Xing, Fong, Flavia S.
• Primary Examiner(s): LEE, BENNY T
• Application Number:
  US11/288,049
• Publication Number:
  US 20070109078A1
• Time in Patent Office: 1,359 Days
• Field of Search: 333/219.1, 333/230, 333/235, 333/231, 333/99.S, 331/96
• US Class Current: 333/230
• CPC Class Codes: H01P 7/065 integrated in a substrate

Abstract

A ferroelectric loaded waveguide resonator capable of operation at microwave, millimeter-wave and higher frequencies and suitable for integration into a three-dimensional monolithic microwave integrated circuit (3D MMIC) is disclosed. The resonator includes a resonator cavity, which, in one form of the invention, is formed by two parallel metal layers and a metallized wall structure extending between the metal layers. The cavity is filled with dielectric material and includes a layer of ferroelectric material, which is used to control the resonant frequency by varying a voltage bias applied to the ferroelectric layer. The cavity includes a slot in one of the metal layers and a coupling strip formed adjacent to the slot to provide electromagnetic coupling to other components, such as a voltage controlled oscillator (VCO). The invention can also be applied to other multi-metal semiconductor or wafer level packaging technologies.

Claims

1. A monolithic resonator, comprising:

a waveguide defining a resonator cavity located within a three-dimensional integrated circuit chip, wherein the resonator cavity has a height, width and length, and at least one of the width and length is greater than 200 micrometers;

means for electromagnetically coupling the resonator cavity to other components in the integrated circuit chip;

a ferroelectric layer located in the resonator cavity; and

means for voltage biasing the ferroelectric layer to effect a desired change in resonator frequency characteristics, whereby the resonator is electronically tunable.

2. A monolithic resonator as defined in claim 1, wherein the waveguide is a three-dimensional monolithic microwave integrated circuit (3D MMIC) structure.

3. A monolithic resonator as defined in claim 2, wherein the waveguide is a multi-layer metal (MLM) structure.

4. A monolithic resonator as defined in claim 3, wherein the resonator cavity is defined by:

parallel first and second metal layers separated by a dielectric region; and

metallized walls extending between the first and second metal layers.

5. A monolithic resonator as defined in claim 4, wherein the means for electromagnetically coupling comprises:

a slot located in one of the first and second metal layers; and

a coupling strip extending over the slot in an overlapping configuration, but separated from the slot by another dielectric region.

6. A monolithic resonator as defined in claim 4, wherein the metallized walls of the resonator cavity define a waveguide cavity of rectangular cross section.

7. A monolithic resonator as defined in claim 1, wherein at least one dielectric layer is located in the resonator cavity.

8. A monolithic resonator as defined in claim 1, wherein the ferroelectric layer is of barium strontium titanate (Ba_xSr_1-xTiO₃).

9. A monolithic resonator as defined in claim 1, wherein the waveguide cavity is configured to be operable at millimeter-wave frequencies.

10. A monolithic resonator as defined in claim 1, wherein the ferroelectric layer traverses an entire surface of the resonator cavity.

12. A 3D MMIC as defined in claim 10, wherein the resonator cavity is located between two generally parallel metal layers in the 3D MMIC and by metallized walls extending between the two parallel metal layers to define the cavity.

13. A 3D MMIC as defined in claim 12, wherein the metallized walls define a rectangle and the resonator cavity is a rectangular waveguide resonator.

11. A three-dimensional monolithic microwave integrated circuit (3D MMIC) chip, comprising:

a voltage controlled oscillator (VCO); and

a radio frequency resonator, integrated into a common 3D MMIC chip with the VCO wherein the radio frequency resonator further comprises;

a resonator cavity;

a ferroelectric layer within the resonator cavity that traverses an entire surface of the resonator cavity;

means supplying electromagnetic coupling between the resonator and the VCO; and

means for varying the frequency of operation of the resonator by varying a bias voltage applied to the ferroelectric layer.

14. A method for fabricating an electronically tunable three-dimensional monolithic microwave integrated circuit (3D MMIC) chip, comprising:

forming a waveguide defining a resonator cavity located within the 3D MMIC chip comprising;

forming a first metal layer;

forming a dielectric region overlying the first metal layer;

forming a ferroelectric layer within the dielectric region; and

forming a second metal layer overlying the dielectric region and the ferroelectric layer, thereby defining the resonator cavity such that the ferroelectric layer resides within the resonator cavity;

forming a coupling to the resonator cavity; and

electromagnetically coupling the waveguide to other components in the 3D MMIC chip.

15. The method of claim 14, wherein:

the first and second metal layer are parallel; and

metallized walls extend between the first and second metal layers to define dimensions of the dielectric region.

16. The method of claim 15, wherein:

the first metal layer is formed on a first wafer; and

the second metal layer and the ferroelectric layer are formed on a second wafer.