VCSEL pumped in a monolithically optical manner and comprising a laterally applied edge emitter
First Claim
1. A semiconductor laser device comprising:
- an optically pumped surface-emitting vertical emitter region which has an active radiation-emitting vertical emitter layer;
at least one monolithically integrated pump radiation source for optically pumping the vertical emitter, which has an active radiation-emitting pump layer, wherein the pump layer follows the vertical emitter layer in the vertical direction and a main direction of pump radiation from the monolithically integrated pump radiation source is lateral;
a conductive layer provided between the vertical emitter layer and the pump layer, the semiconductor laser device being partially ablated so that the conductive layer is partially exposed;
a contact applied on the side of the semiconductor laser device which is closer to the pump layer than to the conductive layer;
a further contact applied to exposed areas of the conductive layer; and
a layer which is conductive and which is transparent for radiation of a wavelength as generated by the monolithically integrated pump radiation source provided between the conductive layer and the further contact;
whereby an electrical field can be applied between the conductive layer and the contact for generating pump radiation by charge carrier injection.
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Accused Products
Abstract
A semiconductor laser device comprising an optically pumped surface-emitting vertical emitter region (2) which has an active radiation-emitting vertical emitter layer (3) and has at least one monolithically integrated pump radiation source (5) for optically pumping the vertical emitter region (2), which has an active radiation-emitting pump layer (6). The pump layer (6) follows the vertical emitter layer (3) in the vertical direction and a conductive layer (13) is provided between the vertical emitter layer (3) and the pump layer (6). Furthermore, a contact (9) is applied on the side of the semiconductor laser device which is closer to the pump layer (6) than to the conductive layer (13). An electrical field can be applied between this contact (9) and the conductive layer (13) for generating pump radiation (7) by charge carrier injection.
11 Citations
16 Claims
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1. A semiconductor laser device comprising:
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an optically pumped surface-emitting vertical emitter region which has an active radiation-emitting vertical emitter layer; at least one monolithically integrated pump radiation source for optically pumping the vertical emitter, which has an active radiation-emitting pump layer, wherein the pump layer follows the vertical emitter layer in the vertical direction and a main direction of pump radiation from the monolithically integrated pump radiation source is lateral; a conductive layer provided between the vertical emitter layer and the pump layer, the semiconductor laser device being partially ablated so that the conductive layer is partially exposed; a contact applied on the side of the semiconductor laser device which is closer to the pump layer than to the conductive layer; a further contact applied to exposed areas of the conductive layer; and a layer which is conductive and which is transparent for radiation of a wavelength as generated by the monolithically integrated pump radiation source provided between the conductive layer and the further contact; whereby an electrical field can be applied between the conductive layer and the contact for generating pump radiation by charge carrier injection. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification