Integrated circuit device having optically coupled layers

• US 7,570,849 B2
• Filed: 06/21/2005
• Issued: 08/04/2009
• Est. Priority Date: 06/21/2005
• Status: Active Grant

• Current Assignee: Hewlett Packard Enterprise Development LP (Hewlett-Packard Enterprise Company)
• Original Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Inventors: Beausoleil, Raymond G., Spillane, Sean M.
• Primary Examiner(s): Hughes; James P
• Assistant Examiner(s): Radkowski; Peter
• Application Number:
  US11/158,666
• Publication Number:
  US 20060285792A1
• Time in Patent Office: 1,505 Days
• Field of Search: 385/14, 385/27, 385/30, 385/50, 385/129, 385/131
• US Class Current: 385/30
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02B 2006/12164 Multiplexing; Demultiplexing
• CPC Class Codes: G02B 2006/12166 Manufacturing methods
• CPC Class Codes: G02B 6/12002 Three-dimensional structures
• CPC Class Codes: G02B 6/1225 comprising photonic band-gap structures or photonic lattices

Abstract

In an integrated circuit device comprising a vertical arrangement of integrated circuit layers, coupling of an optical signal between a first integrated circuit layer thereof and a second integrated circuit layer thereof is described. The optical signal is evanescently coupled between a photonic crystal defect waveguide and a photonic crystal defect cavity in the first integrated circuit layer and projectably coupled between the photonic crystal defect cavity and an optical aperture on the second integrated circuit layer.

Claims

1. In an integrated circuit device comprising a vertical arrangement of integrated circuit layers, a method for coupling an optical signal between a first integrated circuit layer thereof and a second integrated circuit layer thereof, comprising:

evanescently coupling the optical signal between a photonic crystal defect waveguide and a photonic crystal defect cavity in the first integrated circuit layer; and

projectably coupling the optical signal through a lensing element disposed between said photonic crystal defect cavity and an optical aperture on the second integrated circuit layer.

2. The method of claim 1, wherein the optical signal is evanescently coupled from said photonic crystal defect waveguide into said photonic crystal defect cavity and projected out of said photonic crystal defect cavity into said optical aperture.

3. The method of claim 1, wherein the optical signal is projected out of said optical aperture and into said photonic crystal defect cavity and evanescently coupled from said photonic crystal defect cavity into said photonic crystal defect waveguide.

4. The method of claim 1, wherein the optical signal is projected through a lensing element positioned within an intervening layer positioned between said first integrated circuit layer and said second integrated circuit layer, said lensing element being configured and positioned to image said photonic crystal defect cavity and said optical aperture onto each other.

5. The method of claim 1, said photonic crystal defect waveguide being a first photonic crystal defect waveguide, said photonic crystal defect cavity being a first photonic crystal defect cavity, and said optical aperture corresponding to a second photonic crystal defect cavity in the second integrated circuit layer, further comprising evanescently coupling the optical signal to a second photonic crystal defect waveguide in the second integrated circuit layer.

6. The method of claim 1, said optical aperture being a first optical aperture and said photonic crystal defect cavity being a first photonic crystal defect cavity, further comprising:

propagating the optical signal along said photonic crystal defect waveguide between a first location near said first photonic crystal defect cavity and a second location near a second photonic crystal defect cavity in the first integrated circuit layer;

evanescently coupling the optical signal between said photonic crystal defect waveguide and said second photonic crystal defect cavity; and

projectably coupling the optical signal between said second photonic crystal defect cavity and a second optical aperture on the second integrated circuit layer.

7. The method of claim 6, said photonic crystal defect waveguide being a first photonic crystal defect waveguide, said optical signal being a first optical signal projected out of said first optical aperture into said first photonic crystal defect cavity, evanescently coupled from said first photonic crystal defect cavity into said first photonic crystal defect waveguide, propagated along said first photonic crystal defect waveguide from said first location to said second location, evanescently coupled from said first photonic crystal defect waveguide into said second photonic crystal defect cavity, and projected out of said second photonic crystal defect cavity into said second optical aperture, the method further comprising:

projecting a second optical signal out of a third optical aperture in said second integrated circuit layer into a third photonic crystal defect cavity in said first integrated circuit layer;

evanescently coupling the second optical signal from said third photonic crystal defect cavity into a second photonic crystal defect waveguide;

propagating the second optical signal along said second photonic crystal defect waveguide from a third location near the third photonic crystal defect cavity to a fourth location near a fourth photonic crystal defect cavity in said first integrated circuit layer;

evanescently coupling the second optical signal from said third photonic crystal defect waveguide into said fourth photonic crystal defect cavity; and

projecting the second optical signal out of said fourth photonic crystal defect cavity into a fourth optical aperture in said second integrated circuit layer.

8. The method of claim 1, wherein said first and second integrated circuit layers are separated by a distance less than a lateral dimension of said photonic crystal defect cavity.

9. The method of claim 1, wherein at least one of said photonic crystal defect waveguide and said photonic crystal defect cavity comprises an active material controlled by at least one of an electrical control signal and an optical control signal such that said coupling said optical signal between said first integrated circuit layer and said second integrated circuit layer includes at least one of modulating, amplifying, multiplexing, and demultiplexing the optical signal.

10. An integrated circuit device, comprising:

a first integrated circuit layer comprising an optical aperture;

a second integrated circuit layer comprising a photonic crystal defect waveguide and a photonic crystal defect cavity; and

an intervening layer positioned between the first intergrated circuit layer and the second intergrated circuit layer and having a lensing element positioned between the optical aperture and the photonic crystal defect cavity;

wherein an optical signal propagating along said photonic crystal defect waveguide is evanescently coupled between said photonic crystal defect waveguide and said photonic crystal defect cavity and projectably coupled between said photonic crystal defect cavity and said optical aperture and said lensing element configured to image said photonic crystal defect cavity and said optical aperture onto each other.

11. The integrated circuit device of claim 10, wherein said first and second integrated circuit layers are separated by a distance less than a lateral dimension of said photonic crystal defect cavity.

12. The integrated circuit device of claim 10, said photonic crystal defect waveguide being a first photonic crystal defect waveguide, said photonic crystal defect cavity being a first photonic crystal defect cavity, further comprising:

a second photonic crystal defect cavity in said second integrated circuit layer having a surface corresponding to said optical aperture; and

a second photonic crystal defect waveguide in the second integrated circuit layer, said optical signal being evanescently coupled between said second photonic crystal defect waveguide and said second photonic crystal defect cavity.

13. The integrated circuit device of claim 10, said optical aperture being a first optical aperture and said photonic crystal defect cavity being a first photonic crystal defect cavity, further comprising:

a second photonic crystal defect cavity in said first integrated circuit layer evanescently coupled with said photonic crystal defect waveguide for a frequency of said optical signal propagating therealong; and

a second optical aperture on the second integrated circuit layer projectably coupled with said second photonic crystal defect cavity at said frequency.

14. The integrated circuit device of claim 13, said photonic crystal defect waveguide being a first photonic crystal defect waveguide, said optical signal being a first optical signal, said frequency being a first frequency, further comprising:

a third optical aperture in said second integrated circuit layer projectably coupling a second optical signal with a third photonic crystal defect cavity in said first integrated circuit layer;

a second photonic crystal defect waveguide in said first integrated circuit layer evanescently coupled with said third photonic crystal defect cavity at a second frequency of said second optical signal;

a fourth photonic crystal defect cavity in said first integrated circuit layer evanescently coupled with said second photonic crystal waveguide at said second frequency; and

a fourth optical aperture in said second integrated circuit layer projectably coupled with said fourth photonic crystal defect cavity.

15. The integrated circuit device of claim 10, wherein at least one of said photonic crystal defect waveguide and photonic crystal defect cavity comprises an active material controlled by at least one of an electrical control signal and an optical control signal such that said optical signal is at least one of modulated, amplified, multiplexed, and demultiplexed when so evanescently or projectably coupled.

16. An apparatus, comprising:

a first integrated circuit layer comprising an optical aperture;

a second integrated circuit layer comprising a photonic crystal defect waveguide and a photonic crystal defect cavity;

means for evanescently coupling an optical signal propagating along said photonic crystal defect waveguide between said photonic crystal defect waveguide and said photonic crystal defect cavity; and

means for projectably coupling the optical signal between said photonic crystal defect cavity and said optical aperture.

17. The apparatus of claim 16, wherein said means for projectably coupling comprises a lensing element within an intervening layer positioned between said first integrated circuit layer and said second integrated circuit layer and configured to image said photonic crystal defect cavity and said optical aperture onto each other.

18. The apparatus of claim 16, wherein said means for projectably coupling is achieved by free-space radiation, the optical signal not passing through a lensing element between said photonic crystal defect cavity and said optical aperture.

19. The apparatus of claim 16, wherein said first and second integrated circuit layers are separated by a distance less than a lateral dimension of said photonic crystal defect cavity.

20. The apparatus of claim 16, said photonic crystal defect waveguide being a first photonic crystal defect waveguide, said photonic crystal defect cavity being a first photonic crystal defect cavity, further comprising:

a second photonic crystal defect cavity in said second integrated circuit layer having a surface corresponding to said optical aperture;

a second photonic crystal defect waveguide in said second integrated circuit layer; and

means for evanescently coupling said optical signal between said second photonic crystal defect waveguide and said second photonic crystal defect cavity.

21. The apparatus of claim 20, said optical aperture being a first optical aperture and said photonic crystal defect cavity being a first photonic crystal defect cavity, further comprising:

a second photonic crystal defect cavity in said first integrated circuit layer;

means for evanescently coupling said photonic crystal defect waveguide with said second photonic crystal defect cavity for a frequency of said optical signal;

a second optical aperture on the second integrated circuit layer; and

means for projectably coupling said second photonic crystal defect cavity with said second optical aperture.

22. The integrated circuit device of claim 16, wherein at least one of said means for evanescently coupling and means for projectably coupling comprises one of active means for modulating, active means for amplifying, active means for multiplexing, and active means for demultiplexing the optical signal.