Organic thin film transistors
First Claim
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1. A thin film transistor comprising a substrate, a gate dielectric layer, and a semiconducting layer, wherein the gate dielectric layer comprises a poly(4-vinylphenol-co-acrylonitrile) based polymer.
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Abstract
A thin film transistor having an improved gate dielectric layer is disclosed. The gate dielectric layer comprises a poly(4-vinylphenol-co-acrylonitrile) based polymer. The resulting gate dielectric layer has a high dielectric constant and can be crosslinked. Higher gate dielectric layer thicknesses can be used to prevent current leakage while still having a large capacitance for low operating voltages. Methods for producing such gate dielectric layers and/or thin film transistors comprising the same are also disclosed.
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20 Claims
- 1. A thin film transistor comprising a substrate, a gate dielectric layer, and a semiconducting layer, wherein the gate dielectric layer comprises a poly(4-vinylphenol-co-acrylonitrile) based polymer.
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15. A gate dielectric layer for an electronic device, the layer comprising a poly(4-vinylphenol-co-acrylonitrile) based polymer.
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16. A method for preparing a thin-film transistor, comprising:
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providing a substrate, a gate electrode, a gate dielectric layer, a source electrode, a drain electrode, and a semiconducting layer, wherein the gate dielectric layer comprises a poly(4-vinylphenol-co-acrylonitrile) based polymer; wherein the gate dielectric layer separates the gate electrode from the semiconducting layer, the source electrode, and the drain electrode. - View Dependent Claims (17, 18, 19, 20)
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