Post last wiring level inductor using patterned plate process
First Claim
1. A semiconductor structure, comprising:
- a substrate having a metal wiring level within the substrate;
a capping layer on and above a top surface of the substrate;
an insulative layer on and above a top surface of the capping layer;
a first layer of photo-imagable material on and above a top surface of the insulative layer;
a layer of oxide on and above a top surface of the first layer of photo-imagable material;
a second layer of photo-imagable material on and above a top surface of the layer of oxide;
an inductor comprising a first portion and a second portion, wherein the first portion of the inductor is in the second layer of photo-imagable material, the layer of oxide, the first layer of photo-imagable material, the insulative layer, and the capping layer, and wherein the second portion of the inductor is in only the second layer of photo-imagable material; and
a wire bond pad in only the first layer of photo-imagable material, the insulative layer, and the capping layer, wherein the first portion the inductor has a height in a first direction greater than a height of the wire bond pad in the first direction, wherein the first direction is perpendicularly directed from the top surface of substrate toward the insulative layer.
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Accused Products
Abstract
A semiconductor structure. The semiconductor structure includes: a substrate having a metal wiring level within the substrate; a capping layer on and above the substrate; an insulative layer on and above the capping layer; a first layer of photo-imagable material on and above the insulative layer; a layer of oxide on and above the first layer of photo-imagable material; a second layer of photo-imagable material on and above the layer of oxide; an inductor; and a wire bond pad. A first portion of the inductor is in the second layer of photo-imagable material, the layer of oxide, the first layer of photo-imagable material, the insulative layer, and the capping layer. A second portion of the inductor is in only the second layer of photo-imagable material. The wire bond pad in only the first layer of photo-imagable material, the insulative layer, and the capping layer.
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Citations
8 Claims
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1. A semiconductor structure, comprising:
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a substrate having a metal wiring level within the substrate; a capping layer on and above a top surface of the substrate; an insulative layer on and above a top surface of the capping layer; a first layer of photo-imagable material on and above a top surface of the insulative layer; a layer of oxide on and above a top surface of the first layer of photo-imagable material; a second layer of photo-imagable material on and above a top surface of the layer of oxide; an inductor comprising a first portion and a second portion, wherein the first portion of the inductor is in the second layer of photo-imagable material, the layer of oxide, the first layer of photo-imagable material, the insulative layer, and the capping layer, and wherein the second portion of the inductor is in only the second layer of photo-imagable material; and a wire bond pad in only the first layer of photo-imagable material, the insulative layer, and the capping layer, wherein the first portion the inductor has a height in a first direction greater than a height of the wire bond pad in the first direction, wherein the first direction is perpendicularly directed from the top surface of substrate toward the insulative layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification