Vertical-cavity surface-emitting laser including a supported airgap distributed bragg reflector

• US 7,573,931 B2
• Filed: 01/09/2002
• Issued: 08/11/2009
• Est. Priority Date: 01/09/2002
• Status: Active Grant

• Current Assignee: Broadcom International Pte Ltd. (Broadcom, Inc.)
• Original Assignee: Avago Technologies General IP PTE Limited (Broadcom, Inc.)
• Inventors: Lin, Chao Kun, Zhu, Jintian, Leary, Michael H., Tan, Michael Renne Ty, Corzine, Scott W.
• Primary Examiner(s): Vy, Hung T
• Application Number:
  US10/042,590
• Publication Number:
  US 20030128733A1
• Time in Patent Office: 2,771 Days
• Field of Search: 372/46, 372/96, 372/43.01, 257/98, 257/55, 257/79, 257/80, 257/81, 257/82, 257/101, 257/102, 257/103, 359/359, 359/585, 359/584, 438/22, 438/37, 438/46
• US Class Current: 372/96
• CPC Class Codes: H01S 5/18308 having a special structure for lateral current or light confinement
• CPC Class Codes: H01S 5/18341 Intra-cavity contacts
• CPC Class Codes: H01S 5/18363 comprising air layers
• CPC Class Codes: H01S 5/2224 semi-insulating semiconductors
• CPC Class Codes: H01S 5/3095 Tunnel junction

Abstract

A vertical-cavity surface-emitting laser incorporating a supported air gap distributed Bragg reflector is disclosed. The supported air gap DBR includes a regrowth layer of material that provides mechanical support for the original material layers. The supported air gap DBR is fabricated by first growing alternating pairs of a first material and a sacrificial material over a suitable substrate. The layer pairs of the first material and sacrificial material are covered by a suitable dielectric material. The dielectric material is then selectively removed exposing regions of the first material and sacrificial material where selective regrowth of additional material is desired. The selective regrowth of the additional material provides mechanical support for the semiconductor material that remains after a selective etch removal of the sacrificial material.

Claims

1. A vertical-cavity surface-emitting laser (VCSEL), comprising:

a substrate;

a distributed Bragg reflector formed over the substrate and including a plurality of semiconductor material layers separated by air gaps;

an active region formed over the distributed Bragg reflector, the active region including a current confinement region and a tunnel junction;

an air gap located adjacent the active region;

a second reflector formed over the active region;

a conductive layer located between the air gap and the second reflector;

electrical contacts associated with the active region and the distributed Bragg reflector;

where the distributed Bragg reflector includes a support layer to support the layers of semiconductor material; and

an additional set of electrical contacts associated with the conductive layer, the additional set of electrical contacts configured to receive an electrical signal and alter the light output wavelength of the VCSEL by causing the conductive layer to move in response to the electrical signal resulting in a tunable VCSEL.

2. The VCSEL of claim 1, wherein the semiconductor material is indium phosphide (InP).

3. The VCSEL of claim 1, wherein the semiconductor material is chosen from the group consisting of any material in the indium phosphide (InP) material system.

4. The VCSEL of claim 1, further comprising an additional semiconductor material layer formed between the active region and the second reflector.

5. The VCSEL of claim 1, wherein the second reflector is an air gap supported distributed Bragg reflector.

6. The VCSEL of claim 1, wherein the second reflector is a dielectric distributed Bragg reflector.

7. The VCSEL of claim 1, wherein the support layer is a regrowth of the semiconductor material.