Chamber recovery after opening barrier over copper

• US 7,575,007 B2
• Filed: 08/23/2006
• Issued: 08/18/2009
• Est. Priority Date: 08/23/2006
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Tang, Hairong, Horioka, Keiji, Zhao, Xiaoye, Pender, Jeremiah T. P.
• Primary Examiner(s): DEO, DUY VU NGUYEN
• Application Number:
  US11/508,345
• Publication Number:
  US 20080050922A1
• Time in Patent Office: 1,091 Days
• Field of Search: None
• US Class Current: 134/1.1
• CPC Class Codes: H01J 37/32862 In situ cleaning of vessels and/or internal parts
• CPC Class Codes: H01L 21/31116 by dry-etching

Abstract

A chamber dry cleaning process particularly useful after a dielectric plasma etch process which exposes an underlying copper metallization. After the dielectric etch process, the production wafer is removed from the chamber and a cleaning gas is excited into a plasma to clean the chamber walls and recover the dielectric etching characteristic of the chamber. Preferably, the cleaning gas is reducing such as hydrogen gas with the addition of nitrogen gas. Alternatively, the cleaning gas may an oxidizing gas. If the wafer pedestal is vacant during the cleaning, it is not electrically biased. If a dummy wafer is placed on the pedestal during cleaning, the pedestal is biased. The cleaning process is advantageously performed every wafer cycle.

Claims

1. A process for etching and chamber cleaning, comprising:

(a) inserting into a plasma etch chamber a production substrate from a cassette having one or more production substrates and the production substrate comprises a dielectric layer overlying a metal layer;

(b) plasma etching the dielectric layer to expose the metal layer;

(c) removing the production substrate from the chamber;

(d) cleaning the chamber with a plasma of a reducing cleaning gas consisting essentially of a mixture of nitrogen gas and hydrogen gas;

(e) then cleaning the chamber with a plasma of a gas consisting essentially of oxygen; and

(f) returning to (a) such that the chamber is cleaned one or more times per cassette.

2. The process of claim 1, wherein a bottom portion of the dielectric layer comprises silicon carbide.

3. The process of claim 1, wherein the metal layer comprises copper.

4. The process of claim 1, wherein the metal layer comprises aluminum.

5. The process of claim 1, wherein (f), returning to (a), comprises that the chamber is cleaned for every production substrate.

6. The process of claim 1, wherein a pedestal supports the production substrate during the etching step and wherein the pedestal is uncovered during at least one of the cleaning steps.

7. The process of claim 1, wherein a pedestal supports the production substrate during the etch step and further including placing a non-production substrate on the pedestal during at least one of the cleaning steps.

8. The process of claim 1, wherein the metal layer underlies portions of the dielectric layer removed by the plasma step (b) and wherein in step (c) the production substrate is removed from the chamber before the metal layer is etched through.

9. A process for plasma etching and chamber cleaning, comprising:

inserting into a plasma etching chamber a production substrate comprising a dielectric layer over a copper layer into a plasma etch chamber;

etching the dielectric layer to expose the copper layer;

removing the production substrate from the chamber; and

with no production substrate being present in the chamber, cleaning the chamber with a plasma of a reducing cleaning gas consisting essentially of hydrogen gas and nitrogen gas, and then cleaning the chamber with a plasma of a gas consisting essentially of oxygen.

10. The process of claim 9, wherein a bottom portion of the dielectric layer comprises silicon carbide.

11. The process of claim 9, wherein a pedestal supporting the production substrate during the etching step is vacant during at least one of the cleaning steps.

12. The process of claim 11, wherein the pedestal is not electrically biased during at least one of the cleaning steps.

13. The process of claim 9, where a pedestal supporting the production substrate during the etch step supports a non-production substrate during at least one of the cleaning steps.

14. The process of claim 13, wherein the pedestal is electrically biased during at least one of the cleaning steps.

15. The process of claim 13, wherein a cassette coupled to the chamber contains a first plurality of the production substrates and the inserting, plasma etching and removing steps are sequentially performed for each of the first plurality of the production substrates so that there are a first plurality of etching steps and the cleaning step is performed only once for the first plurality of etching steps.

16. The process of claim 9, wherein the inserting, plasma etching, removing and cleaning steps are sequentially performed for each of a plurality of production wafers so that there are a plurality of etching steps and the chamber cleaning is performed only once for each of the plurality of etching steps.

17. A process for etching and chamber cleaning, comprising the steps of:

(a) inserting into a plasma etch chamber a production substrate from a cassette having one or more production substrates and the production substrate comprises a dielectric layer overlying a metal layer;

(b) plasma etching the dielectric layer to expose the metal layer;

(c) while the production wafer is in the chamber, cleaning the chamber with a plasma of a reducing gas consisting essentially of hydrogen gas and nitrogen gas, and then cleaning the chamber with a plasma of a gas consisting essentially of oxygen; and

(d) returning to (a) such that the chamber is cleaned for every production wafer.

18. The process of claim 17, wherein the metal layer principally comprises copper.

19. The method of claim 17, wherein the (d) returning to (a) comprises that the chamber is cleaned for every production substrate.