Advanced workpiece finishing

• US 7,575,501 B1
• Filed: 03/03/2006
• Issued: 08/18/2009
• Est. Priority Date: 04/01/1999
• Status: Expired due to Fees

• Current Assignee: Semcon Tech LLC (IPNav)
• Original Assignee: Beaver Creek Concepts, Inc.
• Inventors: Molnar, Charles J.
• Primary Examiner(s): Eley, Timothy V
• Application Number:
  US11/368,295
• Time in Patent Office: 1,264 Days
• Field of Search: 216/33, 216/88, 216/89, 216/91, 252/79.1, 438/690, 438/691, 438/692, 438/693, 451/4, 451/5, 451/8, 451/9, 451/10, 451/11, 451/36, 451/41, 451/59, 451/63, 702/179, 702/182, 703/12, 705/1, 705/7, 705/8, 716/2
• US Class Current: 451/5
• CPC Class Codes: B24B 37/042 operating processes therefor
• CPC Class Codes: B24B 49/04 involving measurement of the workpiece at the place of grinding during grinding operation
• CPC Class Codes: G05B 19/41875 characterised by quality surveillance of production
• CPC Class Codes: G05B 2219/32216 If machining not optimized, simulate new parameters and correct machining
• CPC Class Codes: G05B 2219/45232 CMP chemical mechanical polishing of wafer
• CPC Class Codes: Y02P 90/02 Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]
• CPC Class Codes: Y02P 90/80 Management or planning

Abstract

An apparatus for processing, finishing, and planarizing is disclosed. A methods of processing are disclosed. New methods of control for processing are disclosed. The methods and apparatus, can help improve yield and lower the cost of manufacture for planarizing of workpieces having extremely close tolerances such as semiconductor wafers. Cost of manufacture parameters are used for control. Methods to determine preferred changes to process control parameters are disclosed. Use of a model for improving manufacture, cost of manufacture, and profitability is discussed.

Claims

1. A method of finishing a workpiece comprising:

providing an at least two operative sensors, an at least one processor, and a controller;

applying an operative finishing motion between a workpiece and a finishing element finishing surface;

sensing an at least one information related to the finishing information with the at least two operative sensors;

determining a change for an at least two finishing control parameters using;

i) the at least one processor,

ii) a current cost of manufacture information of the workpiece, and

iii) the at least one information related to the finishing; and

changing in situ the at least two finishing control parameters.

2. The method of claim 1 wherein the current cost of manufacture information comprises a tracked current cost of manufacture information of the workpiece.

3. The method of claim 2 wherein the current cost of manufacture information is selected from the group consisting of a parametric yield, an equipment yield, a defect density, and a finishing rate and includes an at least one measure of monetary value.

4. The method of claim 3 additionally comprising:

using at least in part a cost of manufacture model during the method; and

using the at least one processor for real-time calculations to improve a cost of manufacture during the method.

5. The method of claim 3 additionally comprising:

using at least in part a cost of manufacture model during the method; and

using the at least one processor for calculations at least in part during a finishing cycle time of the method to improve a cost of manufacture during the method.

6. The method of claim 2 additionally comprising:

using the at least one processor for real-time calculations to improve a cost of manufacture during the method.

7. The method of claim 6 additionally comprising:

using at least in part a cost of manufacture model during the method.

8. The method of claim 2 additionally comprising:

using at least in part a cost of manufacture model during the method.

9. The method of claim 2 additionally comprising:

using the at least one processor for calculations at least in part during a finishing cycle time of the method to improve a cost of manufacture during the method.

10. The method of claim 9 additionally comprising:

using at least in part a cost of manufacture model during the method.

11. A processor-readable program storage device encoded with instructions that, when executed by a processor, performs the method of claim 1.

12. The method of claim 1 wherein the workpiece includes a microelectronic surface.

13. The method of claim 12 additionally comprising:

using at least in part a cost of manufacture model during the method; and

using the at least one processor at least in part during a finishing cycle time of the method to improve a cost of manufacture during the method.

14. The method of claim 1 wherein the workpiece includes a semiconductor device.

15. The method of claim 1 wherein the workpiece includes a heterogeneous surface composition.

16. The method of claim 15 additionally comprising:

using at least in part a cost of manufacture model during the method; and

using the at least one processor at least in part during a finishing cycle time of the method to improve a cost of manufacture during the method.

17. The method of claim 1 wherein the workpiece comprises a workpiece having a surface composition which changes as the finishing progresses.

18. The method of claim 17 additionally comprising:

using at least in part a cost of manufacture model during the method; and

using the at least one processor for real-time calculations to improve a cost of manufacture during the method.

19. The method of claim 17 additionally comprising:

using at least in part a cost of manufacture model during the method; and

using the at least one processor for calculations at least in part during a finishing cycle time of the method to improve a cost of manufacture during the method.

20. The method of claim 1 wherein the method further comprises improving both a finishing control and a cost of manufacture during a real time finishing operation.

21. The method of claim 20 additionally comprising:

using at least in part a cost of manufacture model during the method; and

using the at least one processor for real-time calculations to improve a cost of manufacture during the method.

22. The method of claim 20 additionally comprising:

using at least in part a cost of manufacture model during the method; and

using the at least one processor for calculations at least in part during a finishing cycle time of the method to improve a cost of manufacture during the method.

23. The method of claim 1 further comprising systematically computing parameter values for the at least two finishing control parameters.

24. The method of claim 23 additionally comprising:

using at least in part a cost of manufacture model during the method; and

wherein the workpiece comprises a semiconductor wafer having a diameter of at least 300 millimeter.

25. The method of claim 24 additionally comprising:

using the at least one processor for the systematic computing at least in part during a finishing cycle time of the method to improve a cost of manufacture during the method.

26. The method of claim 1 additionally comprising:

using the at least one processor for real-time calculations to improve a cost of manufacture during the method.

27. The method of claim 21 additionally comprising:

using at least in part a cost of manufacture model during the method.

28. The method of claim 1 additionally comprising:

using at least in part a cost of manufacture model during the method.

29. The method of claim 1 additionally comprising:

using the at least one processor for calculations at least in part during a finishing cycle time of the method to improve a cost of manufacture during the method.

30. The method of claim 29 additionally comprising:

using at least in part a cost of manufacture model during the method.

31. The method of claim 1 additionally comprising:

using at least in part a cost of manufacture model during the method; and

using the at least one processor in real-time to improve a cost of manufacture in real-time.

32. The method of claim 31 wherein the workpiece comprises a semiconductor wafer having a diameter of at least 300 millimeter.

33. The method of claim 31 additionally comprising:

using iterative calculations during the method.

34. The method of claim 1 additionally comprising:

using at least in part a cost of manufacture model during the method; and

using the at least one processor at least in part during a finishing cycle time of the method to improve a cost of manufacture during the method.

35. The method of claim 34 wherein the workpiece comprises a semiconductor wafer having a diameter of at least 300 millimeter.

36. The method of claim 34 additionally comprising:

using iterative calculations during the method.