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Electrooptical device and a method of manufacturing the same

  • US 7,575,961 B2
  • Filed: 09/29/2006
  • Issued: 08/18/2009
  • Est. Priority Date: 04/07/1999
  • Status: Expired due to Fees
First Claim
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1. A method of manufacturing a semiconductor device, comprising the steps of:

  • forming a semiconductor layer on an insulator;

    doping a part of said semiconductor layer with an element that belongs to group XV in the periodic table to form a low concentration impurity region;

    doping at least two parts of said semiconductor layer with the element that belongs to group XV in the periodic table at a concentration higher than said low concentration impurity region to form a first high concentration impurity region and a second high concentration impurity region;

    forming an insulating film on said semiconductor layer; and

    forming a gate wiring and a capacitor electrode on said insulating film, wherein said gate wiring overlaps with said first high concentration impurity region and said second high concentration impurity region is formed below said capacitor electrode.

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