Method of manufacturing semiconductor device and display device
First Claim
1. A method of manufacturing a semiconductor device comprising of:
- forming a semiconductor layer over a substrate;
forming an insulating film over the semiconductor layer;
forming an opening in the insulating film over the semiconductor layer;
dropping a liquid droplet, containing a conductive composition, by a droplet discharging method over the substrate;
forming a wiring containing the conductive composition at least in the opening; and
performing a heat treatment,wherein a shape of the wiring changes during the heat treatment,wherein the wiring moves to a bottom portion of the opening during the heat treatment, andwherein the wiring is electrically connected to the semiconductor layer.
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Abstract
To provide a method of forming a wiring for the purpose of providing a semiconductor device, which is superior in reliability and cost performance. Further, to provide methods of manufacturing a semiconductor device and a display device by using the method of forming the wiring according to the present invention. According to the present invention, when a wiring material and the like is directly patterned on a substrate mainly having an insulating surface by droplet discharging method, a wiring is formed at a position including at least an opening in contact with an underlying portion on an insulating film provided with the opening by dropping a liquid droplet containing a conductive composition by droplet discharging method. By heating the substrate with the wiring formed thereon, a surface of the wiring on the opening and a surface of the wiring other than the wiring on the opening are approximately leveled, and the opening is filled.
28 Citations
23 Claims
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1. A method of manufacturing a semiconductor device comprising of:
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forming a semiconductor layer over a substrate; forming an insulating film over the semiconductor layer; forming an opening in the insulating film over the semiconductor layer; dropping a liquid droplet, containing a conductive composition, by a droplet discharging method over the substrate; forming a wiring containing the conductive composition at least in the opening; and performing a heat treatment, wherein a shape of the wiring changes during the heat treatment, wherein the wiring moves to a bottom portion of the opening during the heat treatment, and wherein the wiring is electrically connected to the semiconductor layer.
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2. A method according to claim 1, further comprising steps of:
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after the heat treatment, forming a mask on the wiring; and etching the wiring by using the mask.
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3. A method according to claim 2, wherein the mask is formed by a droplet discharging method using an inkjet nozzle.
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4. A method according to claim 1, further comprising:
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forming a partition wall over the substrate prior to dropping the liquid droplet, wherein the wiring is formed by the droplet discharging method using an inkjet nozzle and is formed inside of the partition wall.
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5. A method according to claim 4, wherein the partition wall is manufactured by a droplet discharging method using an inkjet nozzle.
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6. A method according to claim 1, wherein the heat treatment is carried out under reduced pressure.
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7. A method according to claim 1, wherein the heat treatment is performed by using a lamp.
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8. A method according to claim 1, wherein the heat treatment is performed by an irradiating laser beam.
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9. A method according to claim 1, wherein the conductive composition is formed by dispersing a material containing a plurality of nanometal particles in a solvent.
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10. A method according to claim 1, wherein a surface of the wiring on the opening and a surface of the wiring other than on the opening are made approximately level over the substrate by the heat treatment.
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11. A method of manufacturing a semiconductor device comprising of:
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forming a gate electrode over a substrate; forming a gate insulating film over the substrate; forming a semiconductor layer having an amorphous structure over the gate electrode; forming a semiconductor layer doped with an n-type or p-type conductivity over the semiconductor layer having the amorphous structure; forming source and drain electrodes over the semiconductor layer doped with the n-type or type conductivity; forming an insulating film over the source and drain electrodes; forming an opening in the insulating film over the source and drain electrodes; dropping a liquid droplet, containing a conductive composition, by a droplet discharging method over the substrate; forming a wiring containing the conductive composition at least in the opening; and performing a heat treatment, wherein a shape of the wiring changes during the heat treatment, wherein the wiring moves to a bottom portion of the opening during the heat treatment, and wherein the wiring is electrically connected to the semiconductor layer.
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12. A method according to claim 11, wherein the heat treatment is carried out under reduced pressure.
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13. A method according to claim 11, wherein the heat treatment is performed by using a lamp.
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14. A method according to claim 11, wherein the heat treatment is performed by an irradiating laser beam.
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15. A method according to claim 11, wherein the conductive composition is formed by dispersing a material containing a plurality of nanometal particles in a solvent.
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16. A method according to claim 11, wherein a surface of the wiring on the opening and a surface of the wiring other than on the opening are made approximately level over the substrate by the heat treatment.
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17. A method of manufacturing a semiconductor device comprising of:
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forming a semiconductor layer over a substrate; forming an insulating film over the semiconductor layer; forming an opening in the insulating film over the semiconductor layer; dropping a liquid droplet, containing a conductive composition, by a droplet discharging method over the substrate; forming a wiring containing the conductive composition at least in the opening; performing a heat treatment; forming a pixel electrode by a droplet discharging method over the substrate; and forming a light emitting layer over the pixel electrode, wherein a shape of the wiring changes during the heat treatment, wherein the wiring moves to a bottom portion of the opening during the heat treatment, and wherein the wiring is electrically connected to the semiconductor layer.
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18. A method according to claim 17, wherein the pixel electrode is formed of at least one compound selected from the group consisting of a compound of indium oxide and tin oxide, a compound of indium oxide and zinc oxide, zinc oxide, tin oxide, indium oxide, and titanium nitride.
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19. A method according to claim 17, wherein the light emitting layer is formed by a droplet discharging method using an inkjet nozzle.
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20. A method according to claim 17, wherein the heat treatment is carried out under reduced pressure.
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21. A method according to claim 17, wherein the heat treatment is performed by using a lamp.
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22. A method according to claim 17, wherein the heat treatment is performed by an irradiating laser beam.
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23. A method according to claim 17, wherein the conductive composition is formed by dispersing a material containing a plurality of nanometal particles in a solvent.
Specification