Methods for enhancing capacitors having roughened features to increase charge-storage capacity
First Claim
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1. A semiconductor device comprising:
- a dielectric layer having first and second opposite sides;
a first electrode formed on the first side of the dielectric layer, the first electrode having a first conductive barrier layer adjacent the first side of the dielectric layer and a first conductive electrode layer, the first conductive barrier layer comprising at least one of titanium nitride, tungsten nitride, tungsten silicon nitride, or titanium silicon nitride or any combination thereof, the first conductive electrode layer comprising at least one of silicon germanium or polysilicon, or any combination thereof; and
a second electrode formed on the second side of the dielectric layer.
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Abstract
Structures and methods for making a semiconductor structure are discussed. The semiconductor structure includes a rough surface having protrusions formed from an undoped silicon film. If the semiconductor structure is a capacitor, the protrusions help to increase the capacitance of the capacitor. The semiconductor structure also includes a relatively smooth surface abutting the rough surface, wherein the relatively smooth surface is formed from a polycrystalline material.
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15 Claims
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1. A semiconductor device comprising:
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a dielectric layer having first and second opposite sides; a first electrode formed on the first side of the dielectric layer, the first electrode having a first conductive barrier layer adjacent the first side of the dielectric layer and a first conductive electrode layer, the first conductive barrier layer comprising at least one of titanium nitride, tungsten nitride, tungsten silicon nitride, or titanium silicon nitride or any combination thereof, the first conductive electrode layer comprising at least one of silicon germanium or polysilicon, or any combination thereof; and a second electrode formed on the second side of the dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification