Cyclic error compensation in interferometry systems

• US 7,576,868 B2
• Filed: 06/08/2007
• Issued: 08/18/2009
• Est. Priority Date: 06/08/2007
• Status: Active Grant

• Current Assignee: Zygo Corporation (Ametek Incorporated)
• Original Assignee: Zygo Corporation (Ametek Incorporated)
• Inventors: Demarest, Frank C.
• Primary Examiner(s): Connolly; Patrick J
• Application Number:
  US11/760,535
• Publication Number:
  US 20080304077A1
• Time in Patent Office: 802 Days
• Field of Search: 356/481, 356/482, 356/486, 356/487, 356/492, 356/498, 356/500, 356/517
• US Class Current: 356/486
• CPC Class Codes: G01B 9/02003 using beat frequencies
• CPC Class Codes: G01B 9/02045 using the Doppler effect
• CPC Class Codes: G01B 9/02059 Reducing effect of parasitic reflections, e.g. cyclic errors
• CPC Class Codes: G01B 9/02084 Processing in the Fourier or frequency domain when not imaged in the frequency domain

Abstract

A first portion of a beam including a first frequency component is directed along a first path. A second portion of the beam is frequency shifted to generate a shifted beam that includes a second frequency component different from the first frequency component and one or more spurious frequency components different from the first frequency component. At least a portion of the shifted beam is directed along a second path different from the first path. An interference signal S(t) from interference between the beam portions directed along the different paths is measured. The signal S(t) is indicative of changes in an optical path difference n{tilde over (L)}(t) between the paths, where n is an average refractive index along the paths, {tilde over (L)}(t) is a total physical path difference between the paths, and t is time. An error signal is provided to reduce errors in an estimate of {tilde over (L)}(t) that are caused by at least one of the spurious frequency components of the shifted beam, the error signal being derived at least in part based on the signal S(t).

Claims

1. A method comprising:

directing a first portion of a beam including a first frequency component along a first path;

frequency shifting a second portion of the beam to generate a shifted beam that includes a second frequency component different from the first frequency component and one or more spurious frequency components different from the first frequency component, wherein frequency shifting the second beam portion comprises modulating the phase of the second beam portion to generate the shifted beam, and the phase modulation comprises Serrodyne modulation;

directing at least a portion of the shifted beam along a second path different from the first path;

measuring an interference signal S(t) from interference between the beam portions directed along the different paths, wherein the signal S(t) is indicative of changes in an optical path difference n{tilde over (L)}(t) between the paths, where n is an average refractive index along the paths, {tilde over (L)}(t) is a total physical path difference between the paths, and t is time; and

providing an error signal to reduce errors in an estimate of {tilde over (L)}(t) that are caused by at least one of the spurious frequency components of the shifted beam, the error signal being derived at least in part based on the signal S(t).

2. The method of claim 1, further comprising providing the estimate of {tilde over (L)}(t) based at least in part on subtracting the error signal from the signal S(t).

3. The method of claim 1, wherein the phase modulation comprises electro-optic phase modulation.

4. The method of claim 1, wherein the errors are dependent on a non-zero fall time of a ramp associated with the Serrodyne modulation.

5. The method of claim 4, wherein the errors are further dependent on an amplitude of the ramp.

6. The method of claim 1, further comprising providing the estimate of {tilde over (L)}(t) based at least in part on adjusting the phase modulation of the second beam portion using the error signal.

7. The method of claim 6, wherein the phase modulation is adjusted using the phase of the error signal.

8. The method of claim 7, wherein an amplitude of the phase modulation is adjusted using the phase of the error signal.

9. The method of claim 8, wherein adjusting the amplitude of the phase modulation using the phase of the error signal comprises adjusting the amplitude of the phase modulation away from an exact 2π

phase shift of the second beam portion.

10. The method of claim 9, wherein adjusting the amplitude of the phase modulation using the phase of the error signal comprises adjusting the amplitude of the phase modulation to be larger than an exact 2π

phase shift of the second beam portion.

11. The method of claim 1, wherein at least one of the beam portions is directed to reflect from a movable measurement object before producing the interference signal S(t) to generate a Doppler shift indicative of movement of the measurement object.

12. The method of claim 11, further comprising providing the estimate of {tilde over (L)}(t) based at least in part on a sinusoidal component of the signal S(t) that has a time-varying argument corresponding to a sum of a term proportional to a difference between peak frequencies of the first frequency component and the second frequency component and a term proportional to a Doppler shift frequency.

13. The method of claim 12, wherein the error signal includes a sinusoidal component that has a time-varying argument corresponding to a difference between the term proportional to the difference between the peak frequencies of the first frequency component and the second frequency component and the term proportional to the Doppler shift frequency.

14. The method of claim 11, wherein the difference between the peak frequencies of the first frequency component and the second frequency component is less than about 500 kHz.

15. The method of claim 14, wherein the Doppler shift frequency is less than about 50 kHz.

16. The method of claim 1, wherein one of the paths is associated with a position of a reference object and the other path is associated with a position of a moveable measurement object.

17. The method of claim 16, wherein the position of the moveable object is controlled by a servo system.

18. The method of claim 17, wherein the servo system controls the position of the measurement object based on the signal S(t) and the error signal.

19. The method of claim 1, wherein providing the error signal to reduce the errors caused by at least one spurious frequency component in the shifted beam comprises providing one or more coefficients representative of one or more errors that cause the signal S(t) to deviate from an ideal expression of the form A₁ cos(ω

_Rt+φ

(t)+ζ

₁), where A₁ and ζ

₁ are constants, ω

_R is an angular frequency difference between the first frequency component and the second frequency component, and φ

(t)=nk{tilde over (L)}(t), with k=2π

/λ and

λ

equal to a wavelength for the beam.

20. The method of claim 19, wherein the deviation can be expressed as

$\sum _{}$

m , p ⁢

A m , p ⁢

cos ⁡

( ω

R ⁢

t + m p ⁢

φ

⁡

( t ) + ζ

m , p ) ,

where p=1, 2, 3 . . . , and m is any integer not equal to p, and where the provided coefficients comprise information corresponding to at least some of A_m,p and ζ

_m,p.

21. The method of claim 19, wherein the coefficients are derived at least in part based on a plurality of samples of the signal S(t).

22. The method of claim 21, wherein the error signal is generated from the coefficients and one or more error basis functions derived at least in part from a plurality of samples of the signal S(t).

23. The method of claim 22, wherein each of the error basis functions is derived at least in part from a linear combination of samples of the signal S(t).

24. The method of claim 22, wherein each of the error basis functions corresponds to a function that includes one or more leading sinusoidal terms having a time-varying argument that corresponds to a time-varying argument of an error term that represents a portion of the deviation of S(t) from the ideal expression.

25. The method of claim 1, wherein reducing errors in the estimate of {tilde over (L)}(t) comprises deriving the estimate of {tilde over (L)}(t) from a difference between the error signal and a discrete Fourier transform of samples of S(t).

26. A lithography method for use in fabricating integrated circuits on a wafer, the method comprising:

supporting the wafer on a moveable stage;

imaging spatially patterned radiation onto the wafer;

adjusting the position of the stage; and

monitoring the position of the stage using an interferometry system, wherein monitoring the position of the stage comprises reducing errors in an estimate of a physical path difference associated with a position of a measurement object associated with the stage using the method of claim 1.

27. A method for fabricating integrated circuits, the method comprising:

applying a resist to a wafer;

forming a pattern of a mask in the resist by exposing the wafer to radiation using the lithography method of claim 26; and

producing an integrated circuit from the wafer.

28. A lithography method for use in the fabrication of integrated circuits, the method comprising:

directing input radiation through a mask to produce spatially patterned radiation;

positioning the mask relative to the input radiation;

monitoring the position of the mask relative to the input radiation using an interferometry system, wherein monitoring the position of the mask comprises reducing errors in an estimate of a physical path difference associated with the position of the mask using the method of claim 1; and

imaging the spatially patterned radiation onto a wafer.

29. A method for fabricating integrated circuits, the method comprising:

applying a resist to a wafer;

forming a pattern of a mask in the resist by exposing the wafer to radiation using the lithography method of claim 28; and

producing an integrated circuit from the wafer.

30. A lithography method for fabricating integrated circuits on a wafer, the method comprising:

positioning a first component of a lithography system relative to a second component of a lithography system to expose the wafer to spatially patterned radiation; and

monitoring the position of the first component relative to the second component using an interferometry system, wherein monitoring the position of the first component comprises reducing errors in an estimate of a physical path difference associated with a position of a measurement object associated with the first component using the method of claim 1.

31. The method of claim 30, wherein the first component comprises projection optics, and the second component comprises a stage for supporting the wafer.

32. A method for fabricating integrated circuits, the method comprising:

applying a resist to a wafer;

forming a pattern of a mask in the resist by exposing the wafer to radiation using the lithography method of claim 30; and

producing an integrated circuit from the wafer.

33. A method for fabricating a lithography mask, the method comprising:

directing a write beam to a substrate to pattern the substrate;

positioning the substrate relative to the write beam; and

monitoring the position of the substrate relative to the write beam using an interferometry system, wherein monitoring the position of the substrate comprises reducing errors in an estimate of a physical path difference associated with a position of a measurement object associated with the substrate using the method of claim 1.

34. A computer readable medium storing instructions that cause a processor to perform the method of claim 1.

35. An apparatus comprising:

an interferometry system, which during operation

directs a first portion of a beam including a first frequency component along a first path;

frequency shifts a second portion of the beam to generate a shifted beam that includes a second frequency component different from the first frequency component and one or more spurious frequency components different from the first frequency component, wherein the second beam portion is frequency shifted in a phase modulator that modulates the phase of the second beam portion to generate the shifted beam, and the phase modulation comprises Serrodyne modulation; and

directs at least a portion of the shifted beam along a second path different from the first path;

a detector that measures an interference signal S(t) from interference between the beam portions directed along the different paths, wherein the signal S(t) is indicative of changes in an optical path difference n{tilde over (L)}(t) between the paths, where n is an average refractive index along the paths, {tilde over (L)}(t) is a total physical path difference between the paths, and t is time; and

an electronic processor, which during operation receives the interference signal S(t) from the detector and provides an error signal to reduce errors in an estimate of {tilde over (L)}(t) that are caused by at least one of the spurious frequency components of the shifted beam, the error signal being derived at least in part based on the signal S(t).

36. The apparatus of claim 35, wherein the phase modulator comprises an electro-optic phase modulator.

37. A lithography system for use in fabricating integrated circuits on a wafer, the system comprising:

a stage for supporting the wafer;

an illumination system for imaging spatially patterned radiation onto the wafer;

a positioning system for adjusting the position of the stage relative to the imaged radiation; and

the apparatus of claim 35 for monitoring the position of the wafer relative to the imaged radiation.

38. A method for fabricating integrated circuits, the method comprising:

applying a resist to a wafer;

forming a pattern of a mask in the resist by exposing the wafer to radiation using the lithography system of claim 37; and

producing an integrated circuit from the wafer.

39. A lithography system for use in fabricating integrated circuits on a wafer, the system comprising:

a stage for supporting the wafer; and

an illumination system including a radiation source, a mask, a positioning system, a lens assembly, and the apparatus of claim 35, wherein during operation the source directs radiation through the mask to produce spatially patterned radiation, the positioning system adjusts the position of the mask relative to the radiation from the source, the lens assembly images the spatially patterned radiation onto the wafer, and the apparatus monitors the position of the mask relative to the radiation from the source.

40. A method for fabricating integrated circuits, the method comprising:

applying a resist to a wafer;

forming a pattern of a mask in the resist by exposing the wafer to radiation using the lithography system of claim 39; and

producing an integrated circuit from the wafer.

41. A beam writing system for use in fabricating a lithography mask, the system comprising:

a source providing a write beam to pattern a substrate;

a stage supporting the substrate;

a beam directing assembly for delivering the write beam to the substrate;

a positioning system for positioning the stage and beam directing assembly relative one another; and

the apparatus of claim 35 for monitoring the position of the stage relative to the beam directing assembly.

42. A method for fabricating a lithography mask comprising:

directing a beam to a substrate using the beam writing system of claim 41;

varying the intensity or the position of the beam at the substrate to form a pattern in the substrate; and

forming the lithography mask from the patterned substrate.