Infrared radiation imager having sub-pixelization and detector interdigitation

• US 7,579,594 B2
• Filed: 02/19/2008
• Issued: 08/25/2009
• Est. Priority Date: 08/19/2004
• Status: Active Grant

• Current Assignee: DRS Network & Imaging Systems, LLC (Leonardo S.p.A.)
• Original Assignee: DRS Sensors & Targeting Systems, Inc. (Leonardo S.p.A.)
• Inventors: D'Souza, Arvind I, Molyneux, Dale E, Dawson, Larry C, Stapelbroek, Maryn G
• Primary Examiner(s): Porta; David P
• Assistant Examiner(s): LEE, SHUN K
• Application Number:
  US12/033,648
• Publication Number:
  US 20080135757A1
• Time in Patent Office: 553 Days
• Field of Search: 250/332, 250/208.1
• US Class Current: 250/332
• CPC Class Codes: G01J 3/2803 using photoelectric array detector
• CPC Class Codes: G01J 5/20 using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
• CPC Class Codes: G01J 5/22 Electrical features thereof
• CPC Class Codes: H01L 27/14603 Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
• CPC Class Codes: H01L 27/14649 Infrared imagers
• CPC Class Codes: H01L 31/022408 for devices characterised by at least one potential jump barrier or surface barrier

Abstract

An infrared radiation (“IR”) focal plane array (“FPA”) imager includes a detector array chip containing pixels having substantially one-hundred percent operability. Each of the pixels contains a plurality of interdigitated sub-detectors, where the sub-detectors are selectively operable to provide for collection of photogenerated minority charges representative of all or substantially all of the IR radiation absorbed by the detector array chip of the FPA imager.

Claims

1. A pixel for use in a detector array of a focal plane array imager, the pixel comprising:

a plurality of minority charge collectors arranged in an array having at least four rows and at least four columns,

a first metal trace electrically connecting a first plurality of non-adjacent collectors in a first of the rows to a first plurality of non-adjacent collectors in a third of the rows to define a first interdigitzed sub-detector;

a second metal trace electrically connecting a first plurality of non-adjacent collectors in a second of the rows to first plurality of non-adjacent collectors in a fourth of the rows to define a second interdigitzed sub-detector;

a third metal trace electrically connecting a second plurality of non-adjacent collectors in the first row to a second plurality of collectors in the third row to define a third interdigitzed sub-detector; and

a fourth metal trace electrically connecting a second plurality of non-adjacent collectors in the second row to a second plurality of collectors in the fourth row to define a fourth interdigitzed sub-detector;

wherein each of the minority charge collectors is included in no more than a single one of the sub-detectors, each of the sub-detectors is selectively operable (i) in a selected mode to collect minority charges and (ii) in a deselected mode to act as an open circuit, and wherein the sub-detectors are interdigitated in the pixel such that, if one of the sub-detectors is deselected, the remaining sub-detectors in the pixel, when selected, collect approximately 91 percent or more of minority charges generated in the pixel resulting from absorption of optical energy in the pixel that would have been collected if each of the sub-detectors had been selected.

2. The pixel of claim 1, wherein the minority charge collectors are at least one of a p/n junction collection diode and a n/p junction collection diode.

3. The pixel of claim 1, wherein the optical energy is infrared energy.

4. The pixel of claim 1, wherein the sub-detectors are interdigitated according to at least one of expected optical spot distribution, expected diffusion length of minority charge carriers generated from the absorbed optical energy and probability of collection of the minority charges by the collectors based on locations of the collectors in the pixel in relation to locations of optical energy absorption in the pixel.

5. The pixel of claim 1, wherein the first, second, third and fourth metal traces are formed from a first metal layer.

6. The pixel of claim 1, wherein the array of collectors are arranged in four rows by four columns, and the first sub-detector includes the collectors (1,1), (1,3), (3,1) and (3,3) of the array, the second sub-detector includes the collectors (1,2), (3,2), (1,4) and (3,4) of the array, the third sub-detector includes the collectors (2,1), (4,1), (2,3) and (4,3) of the array and the fourth sub-detector includes the collectors (2,2), (4,2), (2,4) and (4,4) of the array.

7. A focal plane array (“

FPA”

) in an infrared imager, wherein the FPA contains a plurality of pixels, wherein each of the pixels comprises;

a plurality of minority charge collectors arranged in an array having at least four rows and at least four columns;

a first metal trace electrically connecting a first plurality of non-adjacent collectors in a first of the rows to a first plurality of non-adjacent collectors in a third of the rows to define a first interdigitzed sub-detector;

a second metal trace electrically connecting a first plurality of non-adjacent collectors in a second of the rows to first plurality of non-adjacent collectors in a fourth of the rows to define a second interdigitzed sub-detector;

a third metal trace electrically connecting a second plurality of non-adjacent collectors in the first row to a second plurality of collectors in the third row to define a third interdigitzed sub-detector; and

a fourth metal trace electrically connecting a second plurality of non-adjacent collectors in the second row to a second plurality of collectors in the fourth row to define a fourth interdigitzed sub-detector;

wherein each of the minority charge collectors is included in no more than a single one of the sub-detectors, each of the sub-detectors is selectively operable (i) in a selected mode to collect minority charges and (ii) in a deselected mode to act as an open circuit, and

wherein the sub-detectors are interdigitated in the pixel such that, if one of the sub-detectors is deselected, the remaining sub-detectors in the pixel, when selected, collect approximately 91 percent or more of minority charges generated in the pixel resulting from absorption of optical energy in the pixel that would have been collected if each of the sub-detectors had been selected.

8. The imager of claim 7, wherein the sub-detectors in each of the pixels are interdigitated according to at least one of expected optical spot distribution, expected diffusion length of minority charge carriers generated from the absorbed optical energy and probability of collection of the minority charges by the collectors based on locations of the collectors in the pixel in relation to locations of optical energy absorption in the pixel.

9. A method of imaging a scene comprising:

providing a focal plane array (“

FPA”

) including a plurality of pixels, wherein each of the pixels in the FPA includes;

a plurality of minority charge collectors arranged in an array having at least four rows and at least four columns;

a first metal trace electrically connecting a first plurality of non-adjacent collectors in a first of the rows to a first plurality of non-adjacent collectors in a third of the rows to define a first interdigitzed sub-detector;

a second metal trace electrically connecting a first plurality of non-adjacent collectors in a second of the rows to first plurality of non-adjacent collectors in a fourth of the rows to define a second interdigitzed sub-detector;

a third metal trace electrically connecting a second plurality of non-adjacent collectors in the first row to a second plurality of collectors in the third row to define a third interdigitzed sub-detector; and

a fourth metal trace electrically connecting a second plurality of non-adjacent collectors in the second row to a second plurality of collectors in the fourth row to define a fourth interdigitzed sub-detector;

wherein each of the minority charge collectors is included in no more than a single one of the sub-detectors, each of the sub-detectors is selectively operable (i) in a selected mode to collect minority charges and (ii) in a deselected mode to act as an open circuit,

operating one of the sub-detectors in the FPA having an inoperable minority charge collector in the deselected mode and operating all other sub-detectors in the selected mode; and

for each of the pixels in the FPA, collecting at the sub-detectors operating in selected mode approximately 91 percent or more of minority charges generated resulting from absorption of optical energy in the pixel that would have been collected if each of the sub-detectors had been selected.

10. The method of claim 9, further comprising:

for each of the pixels in the FPA, after an integration interval, summing the minority charges collected at the sub-detectors operating in selected mode.

11. The method of claim 9, wherein the minority charge collectors are at least one of a p/n junction collection diode and a n/p junction collection diode.

12. The method of claim 9, wherein the optical energy is infrared energy.