Fabrication of MEMS devices with spin-on glass
First Claim
Patent Images
1. A microstructure component for a MEMS device, comprising:
- a polysilicon bulk layer having a thickness greater than 0.5 μ
m and less than 100 μ
m, said bulk layer being deposited on an underlying sacrificial layer, and said bulk layer having an upper surface with a surface roughness created by a series of randomly shaped pyramids of random height causing local variations in the thickness of the bulk layer;
at least one layer of photo-insensitive spin-on planarizing material deposited directly on said upper surface so as to be in contact therewith and smooth out said surface roughness created by said pyramids;
a photoresist layer deposited directly on said planarizing material so as to be in contact therewith; and
a deep etch trench extending through said photoresist layer to said underlying sacrificial layer.
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Abstract
A method of making an etched structure in the fabrication of a MEMS device involves depositing a bulk layer, typically of polysilicon, prone to surface roughness. At least one layer of photo-insensitive spin-on planarizing material, such as silicate-based spin-on glass, is formed on the bulk layer to reduce surface roughness. This is patterned with a photoresist layer. A deep etch is then performed through the photoresist layer into the bulk layer. This technique results in much more precise etch structures.
8 Citations
10 Claims
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1. A microstructure component for a MEMS device, comprising:
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a polysilicon bulk layer having a thickness greater than 0.5 μ
m and less than 100 μ
m, said bulk layer being deposited on an underlying sacrificial layer, and said bulk layer having an upper surface with a surface roughness created by a series of randomly shaped pyramids of random height causing local variations in the thickness of the bulk layer;at least one layer of photo-insensitive spin-on planarizing material deposited directly on said upper surface so as to be in contact therewith and smooth out said surface roughness created by said pyramids; a photoresist layer deposited directly on said planarizing material so as to be in contact therewith; and a deep etch trench extending through said photoresist layer to said underlying sacrificial layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification