Stacked transistors and process
First Claim
1. Horizontally stacked transistors comprising:
- a single crystal semiconductor substrate;
a plurality of transistors formed on the single crystal semiconductor substrate;
the plurality of transistors encapsulated in an insulating layer;
an opening through the insulating layer between the plurality of transistors, the opening exposing a surface of the single crystal semiconductor substrate;
a first layer of single crystal rare earth insulator material epitaxially grown on the exposed surface of the single crystal semiconductor substrate and lattice matched to the single crystal semiconductor substrate;
a first layer of single crystal semiconductor material epitaxially grown on the first layer of single crystal rare earth insulator material; and
an intermixed transistor formed on the first layer of single crystal semiconductor material.
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Accused Products
Abstract
A method of horizontally stacking transistors on a common semiconductor substrate is initiated by providing a single crystal, generally silicon, semiconductor substrate. A plurality of transistors are formed on the single crystal semiconductor substrate and encapsulated in an insulating layer, such as silicon dioxide. One or more openings are formed through the insulating layer between the plurality of transistors so as to expose a surface of the single crystal semiconductor substrate. A layer of single crystal rare earth insulator material is epitaxially grown on the exposed surface of the single crystal semiconductor substrate. A layer of single crystal semiconductor material, generally silicon, is epitaxially grown on the layer of single crystal rare earth insulator material. An intermixed transistor is formed on the layer of single crystal semiconductor material.
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Citations
11 Claims
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1. Horizontally stacked transistors comprising:
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a single crystal semiconductor substrate; a plurality of transistors formed on the single crystal semiconductor substrate; the plurality of transistors encapsulated in an insulating layer; an opening through the insulating layer between the plurality of transistors, the opening exposing a surface of the single crystal semiconductor substrate; a first layer of single crystal rare earth insulator material epitaxially grown on the exposed surface of the single crystal semiconductor substrate and lattice matched to the single crystal semiconductor substrate; a first layer of single crystal semiconductor material epitaxially grown on the first layer of single crystal rare earth insulator material; and an intermixed transistor formed on the first layer of single crystal semiconductor material. - View Dependent Claims (2, 3)
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4. Horizontally stacked transistors comprising:
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a single crystal semiconductor substrate; a plurality of transistors formed on the single crystal semiconductor substrate; the plurality of transistors being encapsulated in an insulating layer; an opening formed through the insulating layer between the plurality of transistors, the opening exposing a surface of the single crystal semiconductor substrate; and at least one layer combination of a single crystal rare earth conductive layer and a single crystal rare earth insulating layer epitaxially grown on the exposed surface of the single crystal semiconductor substrate and lattice matched to the single crystal semiconductor substrate. - View Dependent Claims (5, 6, 7, 8, 9, 10, 11)
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Specification