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Stacked transistors and process

  • US 7,579,623 B2
  • Filed: 07/22/2005
  • Issued: 08/25/2009
  • Est. Priority Date: 07/22/2005
  • Status: Expired due to Fees
First Claim
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1. Horizontally stacked transistors comprising:

  • a single crystal semiconductor substrate;

    a plurality of transistors formed on the single crystal semiconductor substrate;

    the plurality of transistors encapsulated in an insulating layer;

    an opening through the insulating layer between the plurality of transistors, the opening exposing a surface of the single crystal semiconductor substrate;

    a first layer of single crystal rare earth insulator material epitaxially grown on the exposed surface of the single crystal semiconductor substrate and lattice matched to the single crystal semiconductor substrate;

    a first layer of single crystal semiconductor material epitaxially grown on the first layer of single crystal rare earth insulator material; and

    an intermixed transistor formed on the first layer of single crystal semiconductor material.

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