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Power semiconductor module

  • US 7,579,682 B2
  • Filed: 07/28/2006
  • Issued: 08/25/2009
  • Est. Priority Date: 08/01/2005
  • Status: Active Grant
First Claim
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1. A power semiconductor module comprising:

  • a ceramic substrate which has on at least one side a patterned metallization with a fineness of pattern of smaller than or equal to 800 μ

    m,a first semiconductor chip which comprises a power semiconductor component and which is arranged on the patterned metallization,a second semiconductor chip which comprises drive electronics for driving the first semiconductor chip and which is arranged on the patterned metallization, andat least one thin-wire bond with a bonding-wire diameter of smaller than or equal to 75 μ

    m, which is formed between the patterned metallization and the second semiconductor chip.

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