Method for forming a bump, semiconductor device and method of fabricating same, semiconductor chip, circuit board, and electronic instrument
First Claim
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1. A semiconductor device comprising:
- a semiconductor chips;
a plurality of pads that is formed on a first surface of the semiconductor chip;
a metal layer that is disposed on one of the plurality of pads;
a plurality of leads; and
a soldering or brazing material disposed between the metal layer and one of the plurality of leads,wherein the metal layer is bonded to the one of the plurality of leads through the soldering or brazing material,wherein at least one depression is formed in a periphery of the metal layer in a cross-sectional view of the metal layer taken parallel to the first surface of the semiconductor chip, andthe soldering or brazing material is located in the depression.
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Abstract
A method for forming a bump includes the steps of forming a resist layer so that a through-hole formed therein is located on a pad; and forming a metal layer to be electrically connected to the pad conforming to the shape of the through-hole. The metal layer is formed so as to have a shape in which is formed a region for receiving a soldering or brazing material.
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Citations
8 Claims
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1. A semiconductor device comprising:
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a semiconductor chips; a plurality of pads that is formed on a first surface of the semiconductor chip; a metal layer that is disposed on one of the plurality of pads; a plurality of leads; and a soldering or brazing material disposed between the metal layer and one of the plurality of leads, wherein the metal layer is bonded to the one of the plurality of leads through the soldering or brazing material, wherein at least one depression is formed in a periphery of the metal layer in a cross-sectional view of the metal layer taken parallel to the first surface of the semiconductor chip, and the soldering or brazing material is located in the depression. - View Dependent Claims (2, 3, 4)
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5. A semiconductor device comprising:
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a semiconductor chip; a plurality of pads that is formed on the semiconductor chip; a metal layer that is disposed on one of the plurality of the pads, the metal layer having a first surface, a second surface and a third surface, the first surface facing the one the plurality of pads, the second surface being opposite to the first surface, the third surface connecting the first surface and the second surface; a plurality of leads; and a soldering or brazing material that is disposed between the metal layer and one of the plurality of leads, wherein the metal layer is bonded to the one of the plurality of leads through the soldering or brazing material, wherein at least one depression is formed in the third surface of the metal layer, and the soldering or brazing material is located in the depression. - View Dependent Claims (6, 7, 8)
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Specification