Method for removing carbon-containing residues from a substrate
First Claim
1. A process for removing residue comprising silicon and carbon from at least a portion of a surface of a substrate, the process comprising:
- providing a process gas comprising an oxygen source, a fluorine source, and optionally an additive gas wherein the molar ratio of oxygen to fluorine contained within the process gas ranges from about 2 to about 8;
activating the process gas using at least one energy source to provide reactive species; and
contacting the surface of the substrate with the reactive species to volatilize and remove the residue from the surface.
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Abstract
A process for removing carbon-containing residues from a substrate is described herein. In one aspect, there is provided a process for removing carbon-containing residue from at least a portion of a surface of a substrate comprising: providing a process gas comprising an oxygen source, a fluorine source, an and optionally additive gas wherein the molar ratio of oxygen to fluorine contained within the process gas ranges from about 1 to about 10; activating the process gas using at least one energy source to provide reactive species; and contacting the surface of the substrate with the reactive species to volatilize and remove the carbon-containing residue from the surface.
46 Citations
20 Claims
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1. A process for removing residue comprising silicon and carbon from at least a portion of a surface of a substrate, the process comprising:
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providing a process gas comprising an oxygen source, a fluorine source, and optionally an additive gas wherein the molar ratio of oxygen to fluorine contained within the process gas ranges from about 2 to about 8; activating the process gas using at least one energy source to provide reactive species; and contacting the surface of the substrate with the reactive species to volatilize and remove the residue from the surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A process for removing residues comprising silicon and carbon from a surface of a process chamber wherein the process chamber is used to deposit a composite organosilicate material, the process comprising:
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providing the process chamber wherein the chamber comprises a surface at least partially coated with residues; providing a process gas comprising an oxygen source, a fluorine source, and optionally an additive gas wherein the molar ratio of oxygen to fluorine contained within the process gas ranges from about 2 to about 8; activating the process gas using at least one energy source to form reactive species; contacting the residues with the reactive species to form at least one volatile product; and removing the at least one volatile product from the process chamber. - View Dependent Claims (13, 14)
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15. A process for removing residues comprising silicon and carbon from a surface of a process chamber wherein the process chamber is used to deposit a composite organosilicate material, the process comprising:
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providing the process chamber wherein the chamber comprises a surface at least partially coated with residues; providing a process gas comprising an oxygen source, a fluorine source, and optionally an additive gas wherein the molar ratio of oxygen to fluorine contained within the process gas ranges from about 2 to about 8; activating the process gas by applying at least one energy source to form reactive species wherein at least a portion of the process gas is activated within the process chamber and at least another portion of the process gas is activated in a location outside of the process chamber; contacting the residues with the reactive species to form at least one volatile product; and removing the at least one volatile product from the process chamber.
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16. A process for removing residues comprising silicon and carbon from a surface of a process chamber wherein the process chamber is used to deposit a composite organosilicate material, the process comprising:
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providing the process chamber wherein the chamber comprises a surface at least partially coated with residues; providing a process gas comprising an oxygen source, a fluorine source, and optionally an additive gas wherein the molar ratio of oxygen to fluorine contained within the process gas ranges from about 2 to about 8; activating the process gas by applying at least one energy source to form reactive species wherein a first portion of the process gas is activated outside of the process chamber and introduced into the process chamber and a second portion of the process gas is activated within the process chamber; contacting the residues with the reactive species to form at least one volatile product wherein the contacting step is conducted at a pressure of 5 torr or less; and removing at least one volatile product from the process chamber. - View Dependent Claims (17, 18, 19)
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20. A process for the deposition of an composite organosilicate film on a substrate, the process comprising:
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placing the substrate into a process chamber; depositing the composite organosilicate film onto the substrate and a silicon and carbon-containing residue onto at least one surface within the chamber using a pore-forming precursor and a structure-forming precursor wherein the depositing step is conducted by a process selected from chemical vapor deposition, atomic layer deposition, vacuum deposition, spray pyrolysis and combinations thereof; providing a process gas comprising an oxygen source, a fluorine source, and optionally an additive gas wherein the molar ratio of oxygen to fluorine contained within the process gas ranges from about 2 to about 8; activating the process gas by applying at least one energy source to form reactive species; contacting the residues with the reactive species to form at least one volatile product; and removing from the reactor the at least one volatile product to clean the reactor.
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Specification