Thermal transition methods and devices

• US 7,582,109 B2
• Filed: 08/04/2005
• Issued: 09/01/2009
• Est. Priority Date: 08/04/2004
• Status: Active Grant

• Current Assignee: Michael S. Kitchen, Rebecca Delegge
• Original Assignee: Michael S. Kitchen, Rebecca Delegge
• Inventors: DeLegge, Rebecca, Kitchen, Michael S.
• Primary Examiner(s): Denion; Thomas E
• Assistant Examiner(s): JETTON, CHRISTOPHER M
• Application Number:
  US11/196,891
• Publication Number:
  US 20060030933A1
• Time in Patent Office: 1,489 Days
• Field of Search: 623/1.1, 623/1.16, 623/1.18, 623/1.19, 623/1.2, 623/11, 623/12, 128/1, 128/341, 605/27, 605/29
• US Class Current: 623/1.19
• CPC Class Codes: A61B 2017/00867 shape memory effect
• CPC Class Codes: A61B 2017/1205 Introduction devices
• CPC Class Codes: A61B 2017/12054 Details concerning the detachment of the occluding device from the introduction device
• CPC Class Codes: A61B 2017/12077 Joint changing shape upon application of heat, e.g. bi-metal or reversible thermal memory
• CPC Class Codes: A61F 2/844 folded prior to deployment
• CPC Class Codes: A61F 2/86 Stents in a form characterised by the wire-like elements; Stents in the form characterised by a net-like or mesh-like structure
• CPC Class Codes: A61F 2/88 the wire-like elements formed as helical or spiral coils forming a net-like or mesh-like structure A61F2/90
• CPC Class Codes: A61F 2210/0014 using shape memory or superelastic materials, e.g. nitinol
• CPC Class Codes: A61F 2210/0033 electrically, e.g. heated by resistor
• CPC Class Codes: A61F 2210/0076 multilayered, e.g. laminated structures
• CPC Class Codes: C22F 1/006 Resulting in heat recoverable alloys with a memory effect

Abstract

A method of sequentially transitioning a thermally active shape memory device progressively translocates the thermally active shape memory device through a first controlled temperature zone and through an additional controlled temperature zone. The thermally active shape memory device is thermally transitioned and changed in geometric shape as a result of thermal communication of the shape memory device with either or both of the controlled temperature zones to produce a transitioned thermally active shape memory device. Novel devices produced according to the method are also disclosed.

Claims

1. A method of sequentially transitioning a thermally active shape memory device, comprising the steps of:

progressively translocating said thermally active shape memory device through a first temperature zone of a lumen comprising said first temperature zone;

progressively translocating said thermally active shape memory device through a controlled temperature zone of said lumen, wherein said first temperature zone and said controlled temperature zone are at materially different temperatures; and

progressively and sequentially thermally transitioning a geometric change in shape of said thermally active shape memory device at said controlled temperature zone as said shape memory device is progressively translocated through said lumen as a result of thermal transfer between said shape memory device and said lumen at said controlled temperature zone of said lumen,

wherein the progressive and sequential thermal transitioning of the geometric change in shape of said thermally active shape memory device progressively and sequentially produces a shape transitioned thermally active shape memory device.

2. A method of sequentially transitioning a thermally active shape memory device as described in claim 1, wherein said transitioned thermally active shape memory device is in situ and is in position for use when said transitioned thermally active shape memory device exits said controlled temperature zone of said lumen.

3. A method of sequentially transitioning a thermally active shape memory device as described in claim 1, wherein the method of claim 1 is performed in situ.

4. A method of sequentially transitioning a thermally active shape memory device as described in claim 1, wherein said first temperature zone and said controlled temperature zone are maintained in said lumen in thermal separation from each other, wherein no material thermal communication between said first controlled temperature zone and said additional temperature zone occurs.

5. A method of sequentially transitioning a thermally active shape memory device as described in claim 1, said first temperature zone of said lumen is a relatively lower temperature zone and said controlled temperature zone of said lumen is a relatively higher temperature zone.

6. A method of sequentially transitioning a thermally active shape memory device as described in claim 1, said first temperature zone of said lumen is a relatively higher temperature zone and said additional controlled temperature zone of said lumen is a relatively lower temperature zone.

7. A method of sequentially transitioning a thermally active shape memory device as described in claim 1, wherein the method of claim 1 is performed in situ in a mammalian.

8. A method of sequentially transitioning a thermally active shape memory device as described in claim 1, further comprising the steps of:

introducing heat from a heating element to controlled temperature zone; and

variably controlling a temperature of said controlled temperature zone by variably controlling the introduction of said heat from said heating element.

9. A method of sequentially transitioning a thermally active shape memory device as described in claim 1, further comprising the steps of introducing electrical current from an element comprising electrical contacts that transmit electrical current to said thermally active shape memory device, wherein said thermally active shape memory device has properties of electrical resistance;

increasing a temperature of said thermally active shape memory device by application of said electrical current to said thermally active shape memory device; and

progressively and sequentially thermally transitioning a geometric change in shape of said thermally active shape memory device by said application of said electrical current as said thermally active shape memory device is translocated through said lumen to produce said transitioned thermally active shape memory device.

10. A method of sequentially transitioning a thermally active shape memory device as described in claim 1, further comprising the step of introducing a chilled material into said controlled temperature zone, wherein a temperature of said thermally active shape memory device is maintained or reduced by transfer of heat between said thermally active shape memory device and said chilled material as said thermally active shape memory device is translocated through said controlled temperature zone of said lumen.

11. A method of sequentially transitioning a thermally active shape memory device as described in claim 1, further comprising the step of deploying said thermally active shape memory device by the application of mechanical force to said thermally active shape memory device and changing a geometric shape of said thermally active shape memory device.

12. A method of sequentially transitioning a thermally active shape memory device as described in claim 1, wherein said thermally active shape memory material is substantial linear in shape in said first temperature zone of said lumen and prior to entering said controlled temperature zone.

13. A method of sequentially transitioning a thermally active shape memory device as described in claim 1, wherein said thermally active shape memory material progressively and sequentially transitions in shape to said shape transitioned thermally active shape memory device in said lumen, and said thermally active shape memory device is progressively and sequentially transitioned out of said lumen after each portion of the thermally active shape memory device is shape transitioned.

14. A method of sequentially transitioning a thermally active shape memory device as described in claim 1, wherein said thermally active shape memory material is substantial linear in shape in said first temperature zone of said lumen and prior to entering said controlled temperature zone, and wherein said thermally active shape memory material progressively and sequentially transitions in shape to said shape transitioned thermally active shape memory device at said controlled temperature zone of said lumen, and said thermally active shape memory device is progressively and sequentially transitioned out of said lumen after each portion of the thermally active shape memory device is shape transitioned.